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BAS28,235

P1-P3P4-P6P7-P9P10-P12P13-P13
BAS28 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 3 — 22 July 2010 3 of 12
NXP Semiconductors
BAS28
High-speed double diode
5. Limiting values
[1] Device mounted on an FR4 PCB.
[2] One diode loaded.
[3] T
j
=25°C prior to surge.
6. Thermal characteristics
[1] Device mounted on an FR4 PCB.
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
Per diode
V
RRM
repetitive peak
reverse voltage
-85V
V
R
reverse voltage - 75 V
I
F
forward current
[1]
-215mA
I
FRM
repetitive peak
forward current
-500mA
I
FSM
non-repetitive peak
forward current
square wave
[3]
t
p
=1μs-4A
t
p
=1ms - 1 A
t
p
=1s - 0.5 A
Per device
P
tot
total power dissipation T
amb
=25°C
[1][2]
-250mW
T
j
junction temperature - 150 °C
T
stg
storage temperature −65 +150 °C
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Per device; one diode loaded
R
th(j-a)
thermal resistance from
junction to ambient
in free air
[1]
- - 500 K/W
R
th(j-t)
thermal resistance from
junction to tie-point
- - 360 K/W
BAS28 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 3 — 22 July 2010 4 of 12
NXP Semiconductors
BAS28
High-speed double diode
7. Characteristics
[1] When switched from I
F
= 10 mA to I
R
=10mA; R
L
= 100 Ω; measured at I
R
=1mA.
[2] When switched from I
F
=10mA; t
r
=20ns.
Table 7. Characteristics
T
amb
=25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
Per diode
V
F
forward voltage I
F
= 1 mA - - 715 mV
I
F
= 10 mA - - 855 mV
I
F
=50mA --1V
I
F
=150mA --1.25V
I
R
reverse current V
R
=25V --30nA
V
R
=75V --1μA
V
R
=25V; T
j
=150°C --30μA
V
R
=75V; T
j
=150°C --50μA
C
d
diode capacitance f = 1 MHz; V
R
=0V --1.5pF
t
rr
reverse recovery time
[1]
--4ns
V
FR
forward recovery voltage
[2]
--1.75V
(1) T
j
= 150 °C; typical values
(2) T
j
=25°C; typical values
(3) T
j
=25°C; maximum values
Based on square wave currents.
T
j
=25°C; prior to surge
Fig 1. Forward current as a function of forward
voltage
Fig 2. Non-repetitive peak forward current as a
function of pulse duration; maximum values
02
300
I
F
(mA
)
0
100
200
mbg382
1
V
F
(V)
(1) (2) (3)
mbg704
10
1
10
2
I
FSM
(A)
10
−1
t
p
(μs)
110
4
10
3
10 10
2
BAS28 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 3 — 22 July 2010 5 of 12
NXP Semiconductors
BAS28
High-speed double diode
V
R
=V
Rmax
(1) V
R
= 75 V; maximum values
(2) V
R
= 75 V; typical values
(3) V
R
= 25 V; typical values
f=1MHz; T
j
=25°C
Fig 3. Reverse current as a function of junction
temperature
Fig 4. Diode capacitance as a function of reverse
voltage; typical values
Fig 5. Forward current as a function of ambient temperature; derating curve
10
5
10
4
10
200
0
mga884
100
T
j
(°C)
I
R
(nA)
10
3
10
2
(2)
(1)
(3)
0816124
0.8
0.6
0
0.4
0.2
mbg446
V
R
(V)
C
d
(pF
)
0 50 100 200
250
0
200
msa562
150
150
100
50
I
F
(mA)
T
amb
(°C)
P1-P3P4-P6P7-P9P10-P12P13-P13

BAS28,235

Mfr. #:
Buy BAS28,235
Manufacturer:
Nexperia
Description:
Diodes - General Purpose, Power, Switching DIODE SW TAPE-11
Lifecycle:
New from this manufacturer.
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