ACST12-7CG-TR

December 2008 Rev 1 1/12
ACST12
Transient protected AC power switch
Features
Triac with overvoltage crowbar technology
Low I
GT
(<10 mA) or high immunity
(I
GT
<35 mA) version
High noise immunity: static dV/dt > 2000 V/µs
Benefits
Enables equipment to meet IEC 61000-4-5
High off-state reliability with planar technology
Need no external over voltage protection
Reduces the power passive component count
High immunity against fast transients
described in IEC 61000-4-4 standards
Applications
AC mains static switching in appliance and
industrial control systems
Drive of medium power AC loads like:
Universal drum motor of washing machine
Compressor for fridge or air conditioner
Description
The ACST12 series belongs to the ACS/ACST
family built with the ASD (application specific
discrete) technology. This high performance
device is adapted to home appliances or industrial
systems and drives loads up to 12 A.
This ACST12 switch embeds a TRIAC structure
and a high voltage clamping device able to absorb
the inductive turn-off energy and withstand line
transients such as those described in the IEC
61000-4-5 standards. The ACST12-7S needs a
low gate current to be activated (I
GT
< 10 mA) and
in the mean time provides a high electrical noise
immunity such as those described in the IEC
61000-4-4 standards. The ACST12-7C offers an
extremely high static dV/dt immunity of 2 kV/µs
minimum.
Figure 1. Functional diagram
Table 1. Device summary
Symbol Value Unit
I
T(RMS)
12 A
V
DRM
/V
RRM
700 V
I
GT
10 or 35 mA
TO-220AB
ACST12-7xT
COM
OUT
OUT
G
D²PAK
ACST12-7xG
G
OUT
COM
G
COM
OUT
www.st.com
Characteristics ACST12
2/12
1 Characteristics
Table 2. Absolute ratings (limiting values)
Symbol Parameter Value Unit
I
T(RMS)
On-state rms current full sine wave
TO-220AB
D²PAK
T
c
= 104 °C 12
A
D²PAK
with 1cm² of Cu
T
amb
= 47 °C 2
I
TSM
Non repetitive surge peak on-state current
T
j
initial = 25 °C,( full cycle sine wave)
F = 60 Hz t
p
= 16.7 ms 126 A
F = 50 Hz t
p
= 20.0 ms 120 A
I
2
tI
2
t for fuse selection t
p
= 10 ms 95 A
2
s
dI/dt
Critical rate of rise on-state current
I
G
= 2 x I
GT,
(t
r
100 ns)
F = 120 Hz T
j
= 125 °C 100 A/µs
V
PP
Non repetitive line peak pulse voltage
(1)
T
j
= 125 °C 2 kV
P
G(AV)
Average gate power dissipation T
j
= 125 °C 0.1 W
P
GM
Peak gate power dissipation (t
p
= 20 µs) T
j
= 125 °C 10 W
I
GM
Peak gate current (t
p
= 20 µs) T
j
= 125 °C 1 A
T
stg
Storage temperature range - 40 to + 150 °C
T
j
Operating junction temperature range - 40 to + 125 °C
1. According to test described in IEC 61000-4-5 standard and Figure 19
Table 3. Electrical characteristics
Symbol Test conditions Quadrant T
j
Value Unit
ACST12-7Sx ACST12-7Cx Unit
I
GT
(1)
V
OUT
= 12 V, R
L
= 33 Ω I - II - III 25 °C MAX. 10 35 mA
V
GT
V
OUT
= 12 V, R
L
= 33 Ω I - II - III 25 °C MAX. 1.0 V
V
GD
V
OUT
= V
DRM
, R
L
= 3.3 Ω I - II - III 125 °C MIN. 0.2 V
I
H
(2)
I
OUT
= 500 mA 25 °C MAX. 30 50 mA
I
L
I
G
= 1.2 x I
GT
I - II - III 25 °C MAX. 50 70 mA
dV/dt
(2)
V
OUT
= 67% V
DRM
, gate open 125 °C MIN. 200 2000 V/µs
(dI/dt)c
(2)
(dV/dt)c = 15 V/µs
125 °C
MIN. 5.3
A/ms
Without snubber MIN. 14
V
CL
I
CL
= 0.1 mA, t
p
= 1 ms 25 °C 850 V
1. Minimum I
GT
is guaranteed at 5% of I
GT
max
2. For both polarities of OUT pin referenced to COM pin
ACST12 Characteristics
3/12
Table 4. Static characteristics
Symbol Test conditions Value Unit
V
TM
(1)
I
OUT
= 17 A, t
p
= 500 µs T
j
= 25 °C MAX. 1.5 V
V
T0
(1)
Threshold voltage T
j
= 125 °C MAX. 0.9 V
R
d
(1)
Dynamic resistance T
j
= 125 °C MAX. 30 mΩ
I
DRM
I
RRM
V
OUT
= V
DRM
/ V
RRM
T
j
= 25 °C
MAX.
20 µA
T
j
= 125 °C 1.5 mA
1. For both polarities of OUT pin referenced to COM pin
Table 5. Thermal characteristics
Symbol Parameter Value Unit
R
th(j-c)
Junction to case (AC)
TO-220AB
1.5
°C/W
D²PAK °C/W
R
th(j-a)
Junction to ambient
TO-220AB 60 °C/W
D²PAK with 1cm² of Cu 45 °C/W
Figure 2. Maximum power dissipation vs.
on-state rms current (full cycle)
Figure 3. On-state rms current vs. case
temperature (full cycle)
P(W)
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
0123456789101112
α=180 °
I(A)
T(RMS)
0
1
2
3
4
5
6
7
8
9
10
11
12
13
0 25 50 75 100 125
I
T(RMS)
(A)
T
C
(°C)T
C
(°C)
Figure 4. On-state rms current vs. ambient
temperature (free air convection full
cycle)
Figure 5. Relative variation of thermal
impedance vs. pulse duration
I
T(RMS)
(A)
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0 25 50 75 100 125
TO-220AB
D
2
PAK
With 1cm
2
of cu
T
amb
(°C)
K=[Z
th
/R
th
]
1.0E-02
1.0E-01
1.0E+00
1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01 1.0E+02 1.0E+03
Z
th
(j
-
a)
Z
th
(j
-
c)
t
p
(s)

ACST12-7CG-TR

Mfr. #:
Manufacturer:
STMicroelectronics
Description:
TRIAC 700V 12A D2PAK
Lifecycle:
New from this manufacturer.
Delivery:
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