Characteristics ACST12
4/12
Figure 6. On-state characteristics
(maximum values)
Figure 7. Non repetitive surge peak on-state
current vs. number of cycles
(T
j
initial = 25 °C)
1
10
100
1000
TM
T
j
=25 °C
T
j
=125 °C
T
j
max :
V
to
= 0.90 V
R
d
= 30 mΩ
V
TM
(V)
0
10
20
30
40
50
60
70
80
90
100
110
120
130
1 10 100 1000
I(A)
TSM
Non repetitive
T
j
initial=25 °C
One cycle
t=20ms
Repetitive
T
C
=104 °C
Number of cycles
Figure 8. Non repetitive surge peak on-state
current for a sinusoidal pulse and
corresponding value of I²t
Figure 9. Relative variation of gate triggering
current (I
GT
) and voltage (V
GT
) vs.
junction temperature (typical value)
I (A), I t (A s)
TSM
22
1
10
100
1000
10000
0.01 0.10 1.00 10.00
T
j
initial=25 °C
dI/dt limitation: 100 A/µs
I
TSM
I²t
t
P
(ms)
0.0
0.5
1.0
1.5
2.0
2.5
3.0
-50 -25 0 25 50 75 100 125
I
GT
Q1-Q2
V
GT
Q1-Q2-Q3
I
GT
Q3
T
j
(°C)
I , V [T ] / I , V [T = 25 °C]
GT GT j GT GT j
Figure 10. Relative variation of holding
current (I
H
) and latching current (I
L
)
vs. junction temperature
Figure 11. Relative variation of critical rate of
decrease of main current (di/dt)c
vs. (dV/dt)c
I ,I [T]/I , I [T = 25 °C]
H L j H L j
0.0
0.5
1.0
1.5
2.0
2.5
-50 -25 0 25 50 75 100 125
I
H
I
L
T
j
(°C)
Typical values
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0.1 1 10 100
ACST12-7Cxx
ACST12-7Sxx
(di/dt)c[(dV/dt)c] / Specified(di/dt)c
(dV/dt)c (V/µs)
