MBRM110ET1G

Semiconductor Components Industries, LLC, 2001
October, 2001 – Rev. 0
1 Publication Order Number:
MBRM110E/D
MBRM110E
Surface Mount
Schottky Power Rectifier
POWERMITE
Power Surface Mount Package
The Schottky Powermite employs the Schottky Barrier principle
with a barrier metal and epitaxial construction that produces optimal
forward voltage drop–reverse current tradeoff. The advanced
packaging techniques provide for a highly efficient micro miniature,
space saving surface mount Rectifier. With its unique heatsink design,
the Powermite has the same thermal performance as the SMA while
being 50% smaller in footprint area, and delivering one of the lowest
height profiles, < 1.1 mm in the industry. Because of its small size, it is
ideal for use in portable and battery powered products such as cellular
and cordless phones, chargers, notebook computers, printers, PDAs
and PCMCIA cards. Typical applications are ac/dc and dc–dc
converters, reverse battery protection, and “Oring” of multiple supply
voltages and any other application where performance and size are
critical.
Features:
Low I
R
Extends Battery Life
Low Profile – Maximum Height of 1.1 mm
Small Footprint – Footprint Area of 8.45 mm2
150°C Operating Junction Temperature
Low Thermal Resistance with Direct Thermal Path of Die on
Exposed Cathode Heat Sink
Mechanical Characteristics:
Powermite is JEDEC Registered as D0–216AA
Case: Molded Epoxy
Epoxy Meets UL 94V–O at 1/8
Weight: 62 mg (approximately)
Lead and Mounting Surface Temperature for Soldering Purposes.
260°C Maximum for 10 Seconds
MAXIMUM RATINGS
Please See the Table on the Following Page
SCHOTTKY BARRIER
RECTIFIER
1.0 AMPERES
10 VOLTS
http://onsemi.com
Device Package Shipping
ORDERING INFORMATION
MBRM110ET1 POWERMITE 3,000/Tape & Reel
POWERMITE
CASE 457
PLASTIC
CATHODE
ANODE
MARKING DIAGRAM
M
1E1
1E1 = Device Code
M = Date Code
MBRM110ET3 POWERMITE 12,000/Tape & Reel
MBRM110E
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2
MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
10 V
Average Rectified Forward Current (T
L
= 100°C) I
O
1.0 A
Non–Repetitive Peak Surge Current
(Non–Repetitive peak surge current, halfwave,
single phase, 60 Hz)
I
FSM
50 A
Storage Temperature T
stg
–55 to +150 °C
Operating Junction Temperature T
J
–55 to +150 °C
Voltage Rate of Change (Rated V
R
, T
J
= 25°C) dv/dt 10,000 V/s
THERMAL CHARACTERISTICS
Thermal Resistance – Junction–to–Lead (Anode) (Note 1)
Thermal Resistance – Junction–to–Tab (Cathode) (Note 1)
Thermal Resistance – Junction–to–Ambient (Note 1)
R
tjl
R
tjtab
R
tja
35
23
277
°C/W
ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage (Note 2)
V
F
T
J
= 25°C T
J
= 100°C
V
(I
F
= 0.1 A)
(I
F
= 1.0 A)
(I
F
= 2.0 A)
0.455
0.530
0.595
0.360
0.455
0.540
Maximum Instantaneous Reverse Current (Note 2)
I
R
T
J
= 25°C T
J
= 100°C
A
(V
R
= 5.0 V)
(V
R
= 10 V)
0.5
1.0
300
500
1. Mounted with minimum recommended pad size, PC Board FR4, See Figures 8 and 9.
2. Pulse Test: Pulse Width 250 µs, Duty Cycle 2%.
MBRM110E
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3
Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage
Figure 3. Typical Reverse Current Figure 4. Maximum Reverse Current
0.2
v
F
, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
10
1.0
V
F
, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
100
V
R
, REVERSE VOLTAGE (VOLTS)
100E-3
10E-3
10E-6
1E-6
100E-9
10E-9
V
R
, REVERSE VOLTAGE (VOLTS)
i
F
, INSTANTANEOUS FORWARD CURRENT (AMPS)I
0.1
0.60.4 0.8
2.5 5 7.5
I
F
, INSTANTANEOUS FORWARD CURRENT (AMPS)
, REVERSE CURRENT (AMPS)
R
100
V
R
, REVERSE VOLTAGE (VOLTS)
100E-3
10E-3
1E-3
100E-9
10E-9
I
2.5 5 7.5
, MAXIMUM REVERSE CURRENT (AMPS)
R
T
J
= 100°C
T
J
= 150°C
T
J
= -40°C
T
J
= 25°C
T
J
= 150°C
T
J
= 100°C
T
J
= 25°C
T
J
= 150°C
T
J
= 100°C
T
J
= 25°C
0.2
10
1.0
0.1
0.60.4 0.8
100E-6
10E-6
1E-6
T
J
= 100°C
T
J
= 150°C
T
J
= 25°C
100E-6
1E-3

MBRM110ET1G

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
Schottky Diodes & Rectifiers 1A 10V Low Leakage
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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