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MBRM110ET1G
P1-P3
P4-P6
P7-P8
MBRM1
10E
http://onsemi.com
4
I
pk
/I
o
= 5
Figure 5. Current Derating
Figure 6. Forward Power Dissipation
45
85
25
T
L
, LEAD TEMPERA
TURE (
°
C)
1.8
1.2
1.0
0.8
0.2
0
I
O
, A
VERAGE FORW
ARD CURRENT (AMPS)
0.2
0
0.7
0.6
0.5
0.3
0.1
0
1.0
65
,
A
VERAGE FORW
ARD CURRENT (AMPS)
I
O
105
145
125
1.4
0.4
0.8
1.2
1.6
0.4
P
FO
,
A
VERAGE POWER DISSIP
ATION (W
A
TTS)
165
1.6
SQUARE
WAVE
dc
I
pk
/I
o
=
I
pk
/I
o
= 10
I
pk
/I
o
= 20
I
pk
/I
o
= 20
I
pk
/I
o
= 10
I
pk
/I
o
= 5
I
pk
/I
o
=
SQUARE WA
VE
dc
0.6
0.4
FREQ = 20 kHz
0.6
1.4
0.2
Figure 7. Capacitance
6
0
V
R
, REVERSE VOL
T
AGE (VOL
TS)
1000
100
10
C, CAP
ACIT
ANCE (pF)
3
12
4
5
T
J
= 25
°
C
10
9
8
7
MBRM1
10E
http://onsemi.com
5
T
, TIME (s)
1.0
0.1
0.01
0.001
100
0.1
0.00001
1,000
0.0001
0.001
0.01
1.0
10
Rtjl(t) = Rtjl*r(t)
50%
20%
10%
5.0%
2.0%
1.0%
Figure 8. Thermal Response Junction to Lead
100
0.1
0.00001
T
, TIME (s)
1.0
0.1
0.01
R
0.0001
0.001
0.01
1.0
10
0.001
, TRANSIENT
THERMAL
RESIST
ANCE (NORMALIZED)
(T)
Rtjl(t) = Rtjl*r(t)
50%
20%
10%
5.0%
2.0%
1.0%
Figure 9. Thermal Response Junction to Ambient
R
, TRANSIENT
THERMAL
RESIST
ANCE (NORMALIZED)
(T)
Minimum Recommended Footprint
0.100
2.54
0.025
0.635
0.050
1.27
0.105
2.67
0.030
0.762
inches
mm
MBRM1
10E
http://onsemi.com
6
P
ACKAGE DIMENSIONS
POWERMITE
PLASTIC P
ACKAGE
CASE 457–04
ISSUE D
DIM
MIN
MAX
MIN
MAX
INCHES
MILLIMETERS
A
1.75
2.05
0.069
0.081
B
1.75
2.18
0.069
0.086
C
0.85
1.15
0.033
0.045
D
0.40
0.69
0.016
0.027
F
0.70
1.00
0.028
0.039
H
-0.05
+0.10
-0.002
+0.004
J
0.10
0.25
0.004
0.010
K
3.60
3.90
0.142
0.154
L
0.50
0.80
0.020
0.031
R
1.20
1.50
0.047
0.059
S
NOTES:
1.
DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2.
CONTROLLING DIMENSION: MILLIMETER.
3.
DIMENSION A DOES NOT INCLUDE MOLD FLASH,
PROTRUSIONS OR GATE BURRS. MOLD FLASH,
PROTRUSIONS OR GATE BURRS SHALL NOT
EXCEED 0.15 (0.006) PER SIDE.
S
B
M
0.08 (0.003)
C
S
T
–A–
–B–
S
J
K
–T–
H
L
J
C
D
S
B
M
0.08 (0.003)
C
S
T
F
TERM. 1
TERM. 2
R
0.50 REF
0.019 REF
P1-P3
P4-P6
P7-P8
MBRM110ET1G
Mfr. #:
Buy MBRM110ET1G
Manufacturer:
ON Semiconductor
Description:
Schottky Diodes & Rectifiers 1A 10V Low Leakage
Lifecycle:
New from this manufacturer.
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