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RT8206BGQW

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P24P25-P26
RT8206A/B
10
DS8206A/B-06 August 2011www.richtek.com
To be continued
Parameter Symbol Test Conditions Min Typ Max Unit
I
LIM
Adjustment Range V
ILIMx
= I
LIMx
× R
ILIMx
0.5 -- 2 V
V
ILIMx
= 0.5V 40 50 60
V
ILIMx
= 1V 90 100 110
Current-Limit Threshold
GND
− PHASEx
V
ILIMx
= 2V 180 200 220
mV
Zero-Current Threshold SKIP = GND or REF, GND − PHASEx -- 3 -- mV
Internal Regulator and Reference
LDO Output Voltage V
LDO
BYP = GND, 6V < V
IN
< 25V,
0 < I
LDO
< 70mA
4.9 5 5.1 V
LDO Output Current I
LDO
BYP = GND, V
IN
= 6V to 25V 70 -- -- mA
LDO Short-Circuit Current LDO = GND, BYP = GND -- 200 300 mA
LDO 5V Switchover
Threshold to BYP
V
BYP
Falling Edge, Rising Edge at BYP
Regulation Point
4.53 4.66 4.79 V
LDO Switchover Equivalent
Resistance
R
SW
LDO to BYP, 10mA -- 1.5 3 Ω
REF Output Voltage V
REF
No External Load 1.98 2 2.02 V
REF Load Regulation I
REF
= 0 to 50μA -- 10 -- mV
REF Sink Current REF in Regulation 10 -- -- μA
UVLO
Rising Edge -- 4.35 4.5
PVCC UVLO Threshold PVCC
Falling Edge 3.9 4.05 --
V
Power Good
PGOODx Threshold
FBx with Respect to Internal
Reference, Falling Edge,
Hysteres is = 1%
−11 −7.5 −4 %
PGOODx Propagation Delay Falling Edge -- 10 -- μs
PGOODx Leakage Current High State, Forced to 5.5V -- -- 1 μA
PGOODx Output Low
Voltage
I
SINK
= 4mA -- -- 0.3 V
Fault Detection
OVP Trip Threshold V
FB _OV P
FBx with Respect to Internal Ref. 108 111 115 %
OVP Propagation Delay FBx with 50mV Overdrive -- 10 -- μs
UVP Trip Threshold FBx with Respect to Internal Ref. 65 70 75 %
UVP Shutdown Blanking
Time
t
SHDN_UVP
From ENx Enable -- 3 -- ms
Thermal Shutdown
Thermal Shutdown T
SH DN
-- 150 -- °C
Thermal Shutdown
Hysteresis
-- 10 -- °C
Logic Input
Low Level (Internal Fixed V
OU Tx
) -- -- 0.2
FB1/FB2 Input Voltage
High Level (Internal Fixed V
OU Tx
) V
CC
− 1 -- --
V
RT8206A/B
11
DS8206A/B-06 August 2011 www.richtek.com
Note 1. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.
These are stress ratings only, and functional operation of the device at these or any other conditions beyond those
indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
Note 2. θ
JA
is measured in the natural convection at T
A
= 25°C on a high effective four layers thermal conductivity test board of
JEDEC 51-7 thermal measurement standard.
Note 3. Devices are ESD sensitive. Handling precaution is recommended.
Note 4. The device is not guaranteed to function outside its operating conditions.
Note 5. P
VIN
+ P
PVCC
Parameter Symbol Test Conditions Min Typ Max Unit
Low Level (DEM) -- -- 0.8
REF Level (Ultrasonic Mode) 1.8 -- 2.3
SKIP Input Voltage
High Level (PWM Mode) 2.5 -- --
V
V
OUT1
/ V
OUT2
(400kHz / 500kHz) -- -- 0.8
V
OUT1
/ V
OUT2
(300kHz / 375kHz) 1.8 -- 2.3
TON Setting Voltage
V
OUT1
/ V
OUT2
(200kHz / 250kHz) 2.5 -- --
V
Clear Fault Level / SMPS Off Level -- -- 0.8
Delay Start 1.8 -- 2.3
ENx Input Voltage
SMPS On Level 2.5 -- --
V
Rising Edge 1.2 1.6 2.0
ENLDO Input Voltage V
ENLDO
Falling Edge 0.94 1 1.06
V
ENLDO = 0V or 25V −1 -- +3
ENx = 0V or 5V −1 -- +1
TON, SKIP = 0V or 5V
−1 -- +1
FBx = 0V or 5V −1 -- +1
Input Leakage Current
SECFB = 0V or 5V (RT8206A) −1 -- +1
μA
Internal BOOT Switch
Internal Boost Charging
Switch On-Resistance
PVCC to BOOTx -- 20 -- Ω
Power MOSFET Drivers
UGATEx Driver Sink/Source
Current
UGATEx Forced to 2V -- 2 -- A
LGATEx Driver Source
Current
LGATEx Forc ed to 2V -- 1.7 -- A
LGATEx Driver Sink Current LGATEx Forced to 2V -- 3.3 -- A
UGATEx On-Resistance BOOTx to PHASEx Forced to 5V -- 1.5 4 Ω
LGATEx, High State -- 2.2 5
LGATEx On-Resistance
LGATEx, Low State -- 0.6 1.5
Ω
LG Rising -- 30 --
Dead Time
UG Rising -- 40 --
ns
RT8206A/B
12
DS8206A/B-06 August 2011www.richtek.com
Typical Operating Characteristics
VOUT2 Efficiency vs. Load Current
0
10
20
30
40
50
60
70
80
90
100
0.001 0.01 0.1 1 10
Load Current (A)
Efficiency (%)
Ultrasonic Mode
V
IN
= 25V, TON = V
CC
,
EN2 = V
CC
, EN1 = GND,
ENLDO = V
IN
, FB2 = GND
DEM Mode
PWM Mode
VOUT2 Efficiency vs. Load Current
0
10
20
30
40
50
60
70
80
90
100
0.001 0.01 0.1 1 10
Load Current (A)
Efficiency (%)
Ultrasonic Mode
V
IN
= 7V, TON = V
CC
,
EN2 = V
CC
, EN1 = GND,
ENLDO = V
IN
, FB2 = GND
DEM Mode
PWM Mode
VOUT1 Efficiency vs. Load Current
0
10
20
30
40
50
60
70
80
90
100
0.001 0.01 0.1 1 10
Load Current (A)
Efficiency (%)
Ultrasonic Mode
V
IN
= 25V, TON = V
CC
,
EN2 = GND, EN1 = V
CC
,
ENLDO = V
IN
, FB1 = GND
DEM Mode
PWM Mode
VOUT2 Efficiency vs. Load Current
0
10
20
30
40
50
60
70
80
90
100
0.001 0.01 0.1 1 10
Load Current (A)
Efficiency (%)
Ultrasonic Mode
V
IN
= 12V, TON = V
CC
,
EN2 = V
CC
, EN1 = GND,
ENLDO = V
IN
, FB2 = GND
DEM Mode
PWM Mode
VOUT1 Efficiency vs. Load Current
0
10
20
30
40
50
60
70
80
90
100
0.001 0.01 0.1 1 10
Load Current (A)
Efficiency (%)
Ultrasonic Mode
V
IN
= 12V, TON = V
CC
,
EN2 = GND, EN1 = V
CC
,
ENLDO = V
IN
, FB1 = GND
DEM Mode
PWM Mode
VOUT1 Efficiency vs. Load Current
0
10
20
30
40
50
60
70
80
90
100
0.001 0.01 0.1 1 10
Load Current (A)
Efficiency (%)
DEM Mode
Ultrasonic Mode
PWM Mode
V
IN
= 7V, TON = V
CC
,
EN2 = GND, EN1 = V
CC
,
ENLDO = V
IN
, FB1 = GND
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P24P25-P26

RT8206BGQW

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IC REG CTRLR NOTEBK 2OUT 32WQFN
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