RT8206A/B
22
DS8206A/B-06 August 2011www.richtek.com
LDO causes large power dissipation on automatic
switches, which may result in thermal shutdown.
Discharge Mode
When standby or shutdown mode occurs, or the output
under voltage fault latch is set, the outputs discharge mode
is triggered. During discharge mode, the output capacitor
will be discharged to GND through an internal 20Ω switch.
Shutdown Mode
The RT8206A/B SMPS1, SMPS2 and LDO have
independent enabling control. Drive ENLDO, EN1 and EN2
below the precise input falling edge trip level to place the
RT8206A/B in its low power shutdown state. The
RT8206A/B consumes only 20μA of quiescent current
while in shutdown. When shutdown mode is activated,
the reference turns off. The accurate 1V falling-edge
threshold on the ENLDO can be used to detect a specific
analog voltage level and shutdown the device. Once in
shutdown, the 1.6V rising edge threshold activates,
providing sufficient hysteresis for most application.
Power Up Sequencing and On/Off Controls (ENx)
EN1 and EN2 control SMPS power up sequencing. When
the RT8206A/B applies in the single channel mode, EN1
or EN2 enables the respective outputs when ENx voltage
rising above 2.5V, and disables the respective outputs
when ENx voltage falling below 1.8V.
Connecting one of ENx to VCC and the other one to REF
can force the latter one output starts after the former one
regulates.
If both of ENx forced to connect to REF, both outputs will
always wait for the regulation of the other one. However,
in this situation, neither of the two ENx will be in regulation.
Output Voltage Setting (FBx)
Connect FB1 directly to GND or VCC for a fixed 5V output
(VOUT1). Connect FB2 directly to GND or VCC for a fixed
3.3V output (VOUT2).
The output voltage can also be adjusted from 2V to 5.5V
with a resistor divider network (Figure 6). The following
equation is for adjusting the output voltage. Choose R2 to
be approximately 10kΩ, and solve for R1 using the following
equation :
OUTx FBx
R1
V = V 1
R2
⎡⎤
⎛⎞
×+
⎜⎟
⎢⎥
⎝⎠
⎣⎦
Where V
FBx
is 2V (typ.).
Figure 6. Setting VOUTx with a Resistor Divider
Output Inductor Selection
The switching frequency (on-time) and operating point (%
ripple or L
IR
) determine the inductor value as follows :
×−
×
ON IN OUT
IR LOAD(MAX)
T(VV)
L =
LI
Where LIR is the ratio of the peak-to-peak ripple current
to the average inductor current.
Find a low loss inductor having the lowest possible DC
resistance that fits in the allotted dimensions. Ferrite cores
are often the best choice, although the powdered iron is
inexpensive and can work well at 200kHz. The core must
be large enough to prevent it from saturating at the peak
inductor current (I
PEAK
) :
I
PEAK
= I
LOAD(MAX)
+ [(L
IR
/ 2) x I
LOAD(MAX)
]
This inductor ripple current also impacts transient-response
performance, especially at low V
IN
V
OUTx
differences.
Low inductor values allow the inductor current to slew
faster, replenishing charge removed from the output filter
capacitors by a sudden load step. The peak amplitude of
the output transient. The V
SAG
also features a function of
the output transient (V
SAG
) is also a function of the
maximum duty factor, which can be calculated from the
on-time and minimum off-time :
2
OUTx
LOAD OFF(MIN)
IN
SAG
IN OUTx
OUT OUTx OFF(MIN)
IN
V
(I ) L K T
V
V =
VV
2C V K T
V
⎛⎞
Δ×× +
⎜⎟
⎝⎠
⎡⎤
⎛⎞
×× ×
⎜⎟
⎢⎥
⎝⎠
⎣⎦
PHASEx
LGATEx
R1
R2
V
OUTx
V
IN
UGATEx
VOUTx
FBx
GND
Where minimum off-time (T
OFF(MIN)
) = 300ns (typ.) and K
is from Table 1.
RT8206A/B
23
DS8206A/B-06 August 2011 www.richtek.com
SW
ESR
OUT
f
1
f =
2 ESR C 4
π
×× ×
Do not put high-value ceramic capacitors directly across
the outputs without taking precautions to ensure stability.
Large ceramic capacitors can have a high ESR zero
frequency and cause erratic, unstable operation. However,
it is easy to add enough series resistance by placing the
capacitors a couple of inches downstream from the
inductor and connecting VOUTx or the FBx divider close
to the inductor.
There are two related but distinct ways including double-
pulsing and feedback loop instability in the unstable
operation.
Double-pulsing occurs due to noise on the output or
because the ESR is too low that there is not enough
voltage ramp in the output voltage signal. This fools
the error comparator into triggering a new cycle
immediately after the 300ns minimum off-time period has
expired. Double-pulsing is more annoying than harmful,
resulting in nothing worse than increased output ripple.
However, it may indicate the possible presence of loop
instability, which is caused by insufficient ESR.
Loop instability can result in oscillations at the output
after line or load perturbations that can trip the over voltage
protection latch or cause the output voltage to fall below
the tolerance limit.
The easiest method for checking stability is to apply a
very fast zero-to-max load transient and carefully observe
the output voltage ripple envelope for overshoot and ringing.
It helps to simultaneously monitor the inductor current
with an AC current probe. Do not allow more than one
cycle of ringing after the initial step response under or
overshoot.
Thermal Considerations
For continuous operation, do not exceed absolute
maximum operation junction temperature. The maximum
power dissipation depends on the thermal resistance of
IC package, PCB layout, the rate of surroundings airflow
and temperature difference between junction to ambient.
The maximum power dissipation can be calculated by
following formula :
P
D(MAX)
= ( T
J(MAX)
- T
A
) / θ
JA
Where T
J(MAX)
is the maximum operation junction
temperature, T
A
is the ambient temperature and the θ
JA
is
the junction to ambient thermal resistance.
For recommended operating conditions specification of
RT8206, the maximum junction temperature is 125°C. The
junction to ambient thermal resistance θ
JA
is layout
dependent. For WQFN-32L 5x5 package, the thermal
resistance θ
JA
is 36°C/W on the standard JEDEC 51-7
four layers thermal test board. The maximum power
dissipation at T
A
= 25°C can be calculated by following
formula :
P
D(MAX)
= (125°C 25°C) / (36°C/W) = 2.778W for
WQFN-32L 5x5 package
The maximum power dissipation depends on operating
ambient temperature for fixed T
J(MAX)
and thermal
resistance θ
JA
. For RT8206A/B package, the Figure 7 of
derating curves allows the designer to see the effect of
rising ambient temperature on the maximum power
allowed.
Output Capacitor Selection
The output filter capacitor must have low enough Equivalent
Series Resistance (ESR) to meet output ripple and load
transient requirements, yet have high enough ESR to
satisfy stability requirements. The output capacitance
must also be high enough to absorb the inductor energy
while transiting from full load to no load conditions without
tripping the overvoltage fault latch.
Although Mach Response
TM
DRV
TM
dual ramp valley mode
provides many advantages such as ease-of-use, minimum
external component configuration, and extremely short
response time, due to not employing an error amplifier in
the loop, a sufficient feedback signal needs to be provided
by an external circuit to reduce the jitter level. The required
signal level is approximately 15mV at the comparing point.
This generates V
RIPPLE
= (V
OUT
/ 2) x 15mV at the output
node. The output capacitor ESR should meet this
requirement.
Output Capacitor Stability
Stability is determined by the value of the ESR zero relative
to the switching frequency. The point of instability is given
by the following equation :
RT8206A/B
24
DS8206A/B-06 August 2011www.richtek.com
Layout Considerations
Layout is very important in high frequency switching
converter design. If the layout is designed improperly, the
PCB could radiate excessive noise and contribute to the
converter instability. The following points must be followed
for a proper layout of RT8206A/B.
` Connect RC low pass filter from PVCC to VCC, the RC
low pass filter is composed of an external capacitor and
an internal 10Ω resistor. Bypass VCC to GND with a
capacitor 1μF is recommended. Place the capacitor
close to the IC, within 12mm (0.5 inch) if possible.
` Keep current limit setting network as close as possible
to the IC. Routing of the network should avoid coupling
to high voltage switching node.
` Connections from the drivers to the respective gate of
the high side or the low side MOSFET should be as
short as possible to reduce stray inductance. Use
0.65mm (25 mils) or wider trace.
` All sensitive analog traces and components such as
VOUTx, FBx, GND, ENx, PGOODx, ILIMx, VCC, and
Figure 7. Derating Curves for RT8206A/B Package
TON should be placed away from high voltage switching
nodes such as PHASEx, LGATEx, UGATEx or BOOTx
nodes to avoid coupling. Use internal layer(s) as ground
plane(s) and shield the feedback trace from power traces
and components.
` Gather ground terminal of VIN capacitor(s), VOUTx
capacitor(s), and source of low side MOSFETs as close
as possible. PCB trace defined as PHASEx node, which
connects to source of high side MOSFET, drain of low
side MOSFET and high voltage side of the inductor,
should be as short and wide as possible.
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
2.8
3.0
0 25 50 75 100 125
Ambient Temperature (°C)
Maximum Power Dissipation (W)
Four-Layers PCB

RT8206BGQW

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Description:
IC REG CTRLR NOTEBK 2OUT 32WQFN
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