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Document Number: 71109
S10-2429-Rev. E, 25-Oct-10
Vishay Siliconix
SUB75P03-07, SUP75P03-07
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (T
J
= 25 °C, unless otherwise noted)
Parameter Symbol Test Conditions Min. Typ. Max. Unit
Static
Drain-Source Breakdown Voltage V
DS
V
GS
= 0 V, I
D
= - 250 µA - 30
V
Gate Threshold Voltage V
GS(th)
V
DS
= V
GS
, I
D
= - 250 µA - 1 - 3
Gate-Body Leakage I
GSS
V
DS
= 0 V, V
GS
= ± 20 V ± 100 nA
Zero Gate Voltage Drain Current I
DSS
V
DS
= - 30 V, V
GS
= 0 V - 1
µAV
DS
= - 30 V, V
GS
= 0 V, T
J
= 125 °C - 50
V
DS
= - 30 V, V
GS
= 0 V, T
J
= 175 °C - 250
On-State Drain Current
a
I
D(on)
V
DS
= -5 V, V
GS
= - 10 V - 120 A
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= - 10 V, I
D
= - 30 A 0.0055 0.007
V
GS
= - 10 V, I
D
= - 30 A, T
J
= 125 °C 0.010
V
GS
= - 10 V, I
D
= - 30 A, T
J
= 175 °C 0.013
V
GS
= - 4.5 V, I
D
= - 20 A 0.008 0.010
Forward Transconductance
a
g
fs
V
DS
= - 15 V, I
D
= - 75 A 20 S
Dynamic
b
Input Capacitance C
iss
V
GS
= 0 V, V
DS
= - 25 V, f = 1 MHz
9000
pFOutput Capacitance C
oss
1565
Reversen Transfer Capacitance C
rss
715
Total Gate Charge
c
Q
g
V
DS
= - 15 V, V
GS
= - 10 V, I
D
= - 75 A
160 240
nC
Gate-Source Charge
c
Q
gs
32
Gate-Drain Charge
c
Q
gd
30
Tur n - O n D e l ay Time
c
t
d(on)
V
DD
= - 15 V, R
L
= 0.2
I
D
- 75 A, V
GEN
= - 10 V, R
g
= 2.5
25 40
ns
Rise Time
c
t
r
225 360
Turn-Off Delay Time
c
t
d(off)
150 240
Fall Time
c
t
f
210 340
Source-Drain Diode Ratings and Characteristics
b
(T
C
= 25 °C)
Continuous Current I
S
- 75
A
Pulsed Current I
SM
- 240
Forward Voltage
a
V
SD
I
F
= - 75 A, V
GS
= 0 V - 1.2 - 1.5 V
Reverse Recovery Time t
rr
I
F
= - 75 A, dI/dt = 100 A/µs
55 100 ns
Peak Reverse Recovery Current I
RM(REC)
2.5 5 A
Reverse Recovery Charge Q
rr
0.07 0.25 µC
