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SUB75P03-07-E3

P1-P3P4-P6P7-P7
www.vishay.com
4
Document Number: 71109
S10-2429-Rev. E, 25-Oct-10
Vishay Siliconix
SUB75P03-07, SUP75P03-07
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
On-Resistance vs. Junction Temperature
Avalanche Current vs. Time
0
0.3
0.6
0.9
1.2
1.5
1.8
- 50 - 25 0 25 50 75 100 125 150 175
(Normalized)
- On-Resistance
T
J
- Junction Temperature (°C)
R
DS(on)
V
GS
= 10 V
I
D
= 30 A
t
in
(s)
1000
10
0.00001 0.001 0.1 1
100
(a)I
Dav
0.010.0001
I
AV
(A) at T
A
= 25 °C
I
AV
(A) at T
A
= 150 °C
1
0.1
Source-Drain Diode Forward Voltage
Drain Source Breakdown
vs. Junction Temperature
0 0.2 0.4 0.6 0.8 1.0
V
SD
- Source-to-Drain Voltage (V)
- Source Current (A)I
S
100
10
1
T
J
= 25 °C
T
J
= 150 °C
25
30
35
40
45
- 50 - 25 0 25 50 75 100 125 150 175
T
J
- Junction Temperature (°C)
(V)V
DS
I
D
= 250 µA
Document Number: 71109
S10-2429-Rev. E, 25-Oct-10
www.vishay.com
5
Vishay Siliconix
SUB75P03-07, SUP75P03-07
THERMAL RATINGS
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?71109
.
Maximum Avalanche and Drain Current
vs. Case Temperature
0
15
30
45
60
75
90
0 25 50 75 100 125 150 175
T
C
- Case Temperature (°C)
- Drain Current (A)I
D
Safe Operating Area
1000
1
0.1 1 10 100
0.1
100
- Drain Current (A)I
D
1 ms
100 µs
T
C
= 25 °C
Single Pulse
DC
10 ms
10
Limited
by R
DS(on)
*
V
DS
- Drain-to-Source Voltage (V)
* V
GS
minimum V
GS
at which R
DS(on)
is specified
100 ms
Normalized Thermal Transient Impedance, Junction-to-Case
Square Wave Pulse Duration (s)
2
1
0.1
0.01
10
- 4
10
- 3
10
- 2
10
- 1
1
Normalized Effective Transient
Thermal Impedance
10
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Package Information
www.vishay.com
Vishay Siliconix
Revison: 16-Jun-14
1
Document Number: 71195
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TO-220AB
Note
* M = 1.32 mm to 1.62 mm (dimension including protrusion)
Heatsink hole for HVM
M
*
3
2
1
L
L(1)
D
H(1)
Q
Ø P
A
F
J(1)
b(1)
e(1)
e
E
b
C
D2
MILLIMETERS INCHES
DIM. MIN. MAX. MIN. MAX.
A 4.25 4.65 0.167 0.183
b 0.69 1.01 0.027 0.040
b(1) 1.20 1.73 0.047 0.068
c 0.36 0.61 0.014 0.024
D 14.85 15.49 0.585 0.610
D2 12.19 12.70 0.480 0.500
E 10.04 10.51 0.395 0.414
e 2.41 2.67 0.095 0.105
e(1) 4.88 5.28 0.192 0.208
F 1.14 1.40 0.045 0.055
H(1) 6.09 6.48 0.240 0.255
J(1) 2.41 2.92 0.095 0.115
L 13.35 14.02 0.526 0.552
L(1) 3.32 3.82 0.131 0.150
Ø P 3.54 3.94 0.139 0.155
Q 2.60 3.00 0.102 0.118
ECN: T14-0413-Rev. P, 16-Jun-14
DWG: 5471
P1-P3P4-P6P7-P7

SUB75P03-07-E3

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Manufacturer:
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Description:
MOSFET P-CH 30V 75A D2PAK
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