RJK0305DPB-02 Preliminary
R07DS1245EJ0901 Rev.9.01 Page 2 of 6
Jan 07, 2015
Electrical Characteristics
(Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown voltage V
(BR)DSS
30 — — V I
D
= 10 mA, V
GS
= 0
Gate to source leak current I
GSS
— — ± 0.1 μA V
GS
= +16/–12 V, V
DS
= 0
Zero gate voltage drain current I
DSS
— — 1 μA V
DS
= 30 V, V
GS
= 0
Gate to source cutoff voltage V
GS(off)
1.2 — 2.5 V V
DS
= 10 V, I
D
= 1 mA
Static drain to source on state
resistance
R
DS(on)
— 6.7 8.0 mΩ I
D
= 15 A, V
GS
= 10 V
Note4
R
DS(on)
— 10 13 mΩ I
D
= 15 A, V
GS
= 4.5 V
Note4
Forward transfer admittance |y
fs
| — 45 — S I
D
= 15 A, V
DS
= 10 V
Note4
Input capacitance Ciss — 1250 — pF
V
DS
= 10 V, V
GS
= 0,
f = 1 MHz
Output capacitance Coss — 530 — pF
Reverse transfer capacitance Crss — 70 — pF
Gate Resistance Rg — 0.6 — Ω
Total gate charge Qg — 8 — nC
V
DD
= 10 V, V
GS
= 4.5 V,
I
D
= 30 A
Gate to source charge Qgs — 3.6 — nC
Gate to drain charge Qgd — 1.5 — nC
Turn-on delay time t
d(on)
— 7.0 — ns
V
GS
= 10 V, I
D
= 15 A,
V
DD
≅ 10 V,R
L
= 0.67 Ω,
Rg = 4.7 Ω
Rise time t
r
— 3.0 — ns
Turn-off delay time t
d(off)
— 35 — ns
Fall time t
f
— 3.0 — ns
Body–drain diode forward voltage V
DF
— 0.85 1.08 V IF = 30 A, V
GS
= 0
Note4
Body–drain diode reverse recovery
time
t
rr
— 30 — ns
IF = 30 A, V
GS
= 0
di
F
/ dt = 100 A/ μs
Notes: 4. Pulse test
