RJK0305DPB-02 Preliminary
R07DS1245EJ0901 Rev.9.01 Page 4 of 6
Jan 07, 2015
Case Temperature Tc (
°
C)
Static Drain to Source on State Resistance
vs. Temperature
Capacitance C (pF)
Drain to Source Voltage V
DS
(V)
Typical Capacitance vs.
Drain to Source Voltage
Gate Charge Qg (nc)
Drain to Source Voltage V
DS
(V)
Gate to Source Voltage V
GS
(V)
Dynamic Input Characteristics
010 3020
10000
3000
1000
300
100
30
10
V
GS
= 0
f = 1 MHz
50
40
30
20
10
0
20
16
12
8
4
8 16 24 32 40
00
Crss
Coss
Ciss
I
D
= 30 A
V
GS
V
DS
V
DD
= 25 V
10 V
V
DD
= 25 V
10 V
20
16
12
8
4
–25 0 25 50 75 100 125 150
0
I
D
= 2 A, 5 A, 10 A
V
GS
= 4.5 V
10 V
Pulse Test
2 A, 5 A, 10 A
Static Drain to Source on State Resistance
R
DS (on)
(mΩ)
Source to Drain Voltage V
SD
(V)
Reverse Drain Current I
DR
(A)
Reverse Drain Current vs.
Source to Drain Voltage
Channel Temperature Tch (°C)
Repetitive Avalanche Energy E
AR
(mJ)
Maximum Avalanche Energy vs.
Channel Temperature Derating
20
16
12
8
4
25 50 75100125150
0
50
40
30
20
10
0
0.4 0.8 1.21.6
2.0
Pulse Test
5 V
V
GS
= 0, –5 V
10 V
I
AP
= 10 A
V
DD
= 15 V
duty < 0.1 %
Rg ≥ 50 Ω
