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IPB180N04S400ATMA1
P1-P3
P4-P6
P7-P9
IPB180N04S4-00
OptiMOS
®
-T2 Pow
er-Transistor
Features
• N-channel - Enhancement m
ode
• AEC quali
fied
• MSL1 up to 260
°C peak reflow
• 175°C operating te
mperature
• Green product (RoHS com
pliant)
• Ultra low Rd
s(on)
• 100% Avalan
che tested
Maximum ratin
gs,
at
T
j
=25 °C, unless otherw
ise specified
Parameter
Symbol
Conditions
Unit
Continuous drain current
I
D
T
C
=25°C,
V
GS
=10V
1)
180
A
T
C
=100 °C,
V
GS
=10 V
2)
180
Pulsed drain current
2)
I
D,pulse
T
C
=25 °C
720
Avalanche energy
, single pulse
2)
E
AS
I
D
=90 A
1250
mJ
Avalanche current, single p
ulse
I
AS
-
180
A
Gate source voltage
V
GS
-
±20
V
Power dissipati
on
P
tot
T
C
=25 °C
300
W
Operating and storage temperature
T
j
,
T
stg
-
-55 ... +175
°C
Value
V
DS
40
V
R
DS(on)
0.98
m
W
I
D
180
A
Product Summary
PG-TO
263-7-3
Type
Package
Marking
IPB180N04S4-00
PG-TO
263-7-3
4N0400
Rev. 1.1
page 1
2015-10-07
IPB180N04S4-00
Parameter
Symbol
Conditions
Unit
min.
typ.
max.
Thermal characteristics
2)
Therm
al resistance, junction - case
R
thJC
-
-
-
0.5
K/W
SMD version, devi
c
e on PCB
R
thJA
minim
al footprint
-
-
62
6 cm
2
cooling area
3)
-
-
40
Electrical characteris
tics,
at
T
j
=25 °C, unless otherw
ise specified
Static characteristics
Drain-source break
down v
oltage
V
(BR)DSS
V
GS
=0 V,
I
D
= 1 mA
40
-
-
V
Gate threshold voltage
V
GS(th)
V
DS
=
V
GS
,
I
D
=230 µA
2.0
3.0
4.0
Zero gate voltage d
rain current
I
DSS
V
DS
=40 V,
V
GS
=0 V,
T
j
=25 °C
-
0.1
1
µA
V
DS
=18 V,
V
GS
=0 V,
T
j
=85 °C
2)
-
1
20
Gate-source leakage cur
rent
I
GSS
V
GS
=20 V,
V
DS
=0 V
-
-
100
nA
Drain-source on-state resistance
R
DS(on)
V
GS
=10 V,
I
D
=100 A
-
0.8
0.98
mΩ
Values
Rev. 1.1
page 2
2015-10-07
IPB180N04S4-00
Parameter
Symbol
Conditions
Unit
min.
typ.
max.
Dynamic characteristics
2)
Input capacitance
C
iss
-
17600
22880
pF
Output capacitance
C
oss
-
3780
4900
Reverse transfer capacitance
C
rss
-
130
300
Turn-on delay
time
t
d(on)
-
53
-
ns
Rise time
t
r
-
24
-
Turn-of
f delay
time
t
d(off)
-
67
-
Fall time
t
f
-
58
-
Gate Charge Characteristics
2)
Gate to source charge
Q
gs
-
87
113
nC
Gate to drain charge
Q
gd
-
29
67
Gate charge total
Q
g
-
220
286
Gate plateau vol
tage
V
plateau
-
5.0
-
V
Reverse Diode
Diode continous forward current
2)
I
S
-
-
180
A
Diode pulse current
2)
I
S,pulse
-
-
720
Diode forward voltag
e
V
SD
V
GS
=0 V,
I
F
=100 A,
T
j
=25 °C
-
0.9
1.3
V
Reverse recovery
time
2)
t
rr
-
85
-
ns
Reverse recovery
charge
2)
Q
rr
-
132
-
nC
Values
V
GS
=0 V,
V
DS
=25 V,
f
=1 MHz
V
DD
=20 V,
V
GS
=10 V,
I
D
=180 A,
R
G
=3.5
W
V
DD
=32 V,
I
D
=180 A,
V
GS
=0 to 10 V
2)
Defined by de
sign. Not s
ubject to
producti
on test.
3)
Device on 40
mm x 40 mm x 1.5 mm
epoxy PCB FR4 with 6 cm
2
(one layer, 7
0 µm thick
) copper are
a for drain
connec
tion. PCB is verti
cal in s
till air.
1)
Current is l
imited b
y bondwire; with an
R
thJC
= 0.5 K/W
the chip
is abl
e to carry 425A a
t 25°C.
V
R
=20 V,
I
F
=50A,
d
i
F
/d
t
=100 A/µs
T
C
=25 °C
Rev. 1.1
page 3
2015-10-07
P1-P3
P4-P6
P7-P9
IPB180N04S400ATMA1
Mfr. #:
Buy IPB180N04S400ATMA1
Manufacturer:
Infineon Technologies
Description:
MOSFET N-Ch 40V 180A D2PAK-6 OptiMOS-T2
Lifecycle:
New from this manufacturer.
Delivery:
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Ups
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EMS
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IPB180N04S400ATMA1