IPB180N04S400ATMA1

IPB180N04S4-00
13 Typical avalanche energy 14 Drain-source breakdown voltage
E
AS
= f(T
j
) V
BR(DSS)
= f(T
j
); I
D
= 1 mA
parameter: I
D
15 Typ. gate charge 16 Gate charge waveforms
V
GS
= f(Q
gate
); I
D
= 180 A pulsed
parameter: V
DD
38
40
42
44
-60 -20 20 60 100 140 180
V
BR(DSS)
[V]
T
j
[°C]
8 V
32 V
0
2
4
6
8
10
12
0 40 80 120 160 200 240
V
GS
[V]
Q
gate
[nC]
180 A
90 A
45 A
0
500
1000
1500
2000
2500
3000
25 75 125 175
E
AS
[mJ]
T
j
[°C]
V
GS
Q
gate
Q
gs
Q
gd
Q
g
V
GS
Q
gate
Q
gs
Q
gd
Q
g
Rev. 1.1
page 7 2015-10-07
IPB180N04S4-00
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81726 Munich, Germany
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Infineon Technologies AG 2015
All Rights Reserved.
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).
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Rev. 1.1
page 8 2015-10-07
IPB180N04S4-00
Revision History
Version
Revision 1.0
Revision 1.1
Date
2010-04-13
2015-10-07
Changes
Final Data Sheet
Update of labeling of diagram 6
Rev. 1.1
page 9 2015-10-07

IPB180N04S400ATMA1

Mfr. #:
Manufacturer:
Infineon Technologies
Description:
MOSFET N-Ch 40V 180A D2PAK-6 OptiMOS-T2
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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