OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

DMN1019UFDE-7

P1-P3P4-P6P7-P7
DMN1019UFDE
D
atasheet number: DS35561 Rev. 5 - 2
1 of 7
www.diodes.com
October 2013
© Diodes Incorporated
DMN1019UFDE
ADVANCE INFORMATION
12V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
R
DS(ON) max
Package
I
D max
T
A
= +25°C
12V
10m @ V
GS
= 4.5V
U-DFN2020-6
Type E
11A
12m @ V
GS
= 2.5V
10
14m @ V
GS
= 1.8V
9A
18m @ V
GS
= 1.5V
8A
41m @ V
GS
= 1.2V
5A
Description
This new generation MOSFET has been designed to minimize the on-
state resistance (RDS(on)) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
Applications
Load Switching
Battery Management Application
Power Management Functions
Features
0.6mm profile – ideal for low profile applications
PCB footprint of 4mm2
Low Gate Threshold Voltage
Fast Switching Speed
ESD Protected Gate
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: U-DFN2020-6 Type E
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – NiPdAu over Copper leadframe. Solderable
per MIL-STD-202, Method 208
Weight: 0.008 grams (approximate)
Ordering Information
(Note 4)
Part Number
Marking Reel size (inches)
Quantity per reel
DMN1019UFDE-7 N7 7 3,000
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html
Marking Information
Date Code Key
Year 2011 2012 2013 2014 2015 2016 2017
Code Y Z A B C D E
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
Bottom View
ESD PROTECTED
N7 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: A = 2013)
M = Month (ex: 9 = September)
N7
YM
Equivalent Circuit
U-DFN2020-6
Type E
Pin Out
Bottom View
Pin1
e4
D
S
G
Gate Protection
Diode
DMN1019UFDE
D
atasheet number: DS35561 Rev. 5 - 2
2 of 7
www.diodes.com
October 2013
© Diodes Incorporated
DMN1019UFDE
ADVANCE INFORMATION
Maximum Ratings (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage
V
DSS
12 V
Gate-Source Voltage
V
GSS
±8 V
Continuous Drain Current (Note 5) V
GS
= 4.5V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
11
9
A
t<5s
T
A
= +25°C
T
A
= +70°C
I
D
14
11
A
Maximum Continuous Body Diode Current
I
S
3.0 A
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
I
DM
100 A
Thermal Characteristics
Characteristic Symbol Value Units
Total Power Dissipation (Note 5)
T
A
= +25°C
P
D
0.69
0.44
W
T
A
= +70°C
Thermal Resistance, Junction to Ambient (Note 5)
Steady state
R
JA
182
118
°C/W
t<5s
Total Power Dissipation (Note 6)
T
A
= +25°C
P
D
2.17
1.38
W
T
A
= +70°C
Thermal Resistance, Junction to Ambient (Note 6)
Steady state
R
JA
58
38
°C/W
t<5s
Thermal Resistance, Junction to Case (Note 6)
R
Jc
10
Operating and Storage Temperature Range
T
J,
T
STG
-55 to +150 °C
t1, PULSE DURATION TIME (sec)
Fig. 1 Single Pulse Maximum Power Dissipation
0.001 0.01 0.1 1 10 100 1,0000.0001
0
10
20
30
40
50
60
70
80
90
100
P
,
P
EAK
T
R
ANSIEN
T
P
O
IWE
R
(W)
(PK)
Single Pulse
R = 178 C/W
R = r * R
T - T = P * R

JA
JA(t) (t) JA
JA JA(t)
DUT on MRP
0.01 0.1 1 10 100
V , DRAIN-SOURCE VOLTAGE (V)
Fig. 2 SOA, Safe Operation Area
DS
0.01
0.1
1
10
100
I, D
R
AIN
C
U
R
R
EN
T
(A)
D
R
Limited
DS(on)
DC
P = 10s
W
P = 1s
W
P = 100ms
W
P = 10ms
W
P = 1ms
W
P = 100µs
W
P = 10s
W
µ
T = 150°C
T = 25°C
Single Pulse
DUT on 1 * MRP Board
V = 8V
J(max)
A
GS
DMN1019UFDE
D
atasheet number: DS35561 Rev. 5 - 2
3 of 7
www.diodes.com
October 2013
© Diodes Incorporated
DMN1019UFDE
ADVANCE INFORMATION
Electrical Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV
DSS
12
— —
V
V
GS
= 0V, I
D
= 250A
Zero Gate Voltage Drain Current T
J
= +25°C I
DSS
—
—
1 µA
V
DS
= 12V, V
GS
= 0V
Gate-Source Leakage
I
GSS
—
—
±2 µA
V
GS
= ±8V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS
(
th
)
0.35 — 0.8 V
V
DS
= V
GS
, I
D
= 250A
Static Drain-Source On-Resistance
R
DS (ON)
—
7 10
m
V
GS
= 4.5V, I
D
= 9.7A
8 12
V
GS
= 2.5V, I
D
= 9A
10 14
V
GS
= 1.8V, I
D
= 8.1A
14 18
V
GS
= 1.5V, I
D
= 4.5A
28 41
V
GS
= 1.2V, I
D
= 2.4A
Forward Transfer Admittance
|Y
fs
|
—
28 — S
V
DS
= 4V, I
D
= 9.7A
Diode Forward Voltage
V
SD
—
0.8 1.2 V
V
GS
= 0V, I
S
= 10A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
C
iss
— 2425 —
pF
V
DS
= 10V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance
C
oss
— 396 —
Reverse Transfer Capacitance
C
rss
— 375 —
Gate Resistance
R
g
— 1.1 —
V
DS
= 0V, V
GS
= 0V, f = 1MHz
Total Gate Charge (V
GS
= 8V) Q
g
— 50.6 —
nC
V
DS
= 4V, I
D
= 10A
Total Gate Charge (V
GS
= 4.5V) Q
g
— 27.3 —
Gate-Source Charge
Q
g
s
— 3.4 —
Gate-Drain Charge
Q
g
d
— 5.2 —
Turn-On Delay Time
t
D
(
on
)
— 7.6 —
ns
V
DD
= 4V, V
GS
= 10V, I
D
= 10A
R
G
= 1, R
L
= 0.4
Turn-On Rise Time
t
— 22.2 —
Turn-Off Delay Time
t
D
(
off
)
— 57.6 —
Turn-Off Fall Time
t
f
— 16.8 —
Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000
t1, PULSE DURATION TIME (sec)
Fig. 3 Transient Thermal Resistance
0.001
0.01
0.1
1
r(t),
T
R
ANSIEN
T
T
H
E
R
MAL
R
ESIS
T
AN
C
E
R = r * R
JA(t) (t)
JA
JA
R = 178 C/W
Duty Cycle, D = t1/t2
D = 0.5
D = 0.7
D = 0.9
D = 0.3
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
D = Single Pulse
P1-P3P4-P6P7-P7

DMN1019UFDE-7

Mfr. #:
Buy DMN1019UFDE-7
Manufacturer:
Diodes Incorporated
Description:
MOSFET MOSFET BVDSS: 8V-24V U-DFN2020-6 T&R 3K
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet