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DMN1019UFDE-7

P1-P3P4-P6P7-P7
DMN1019UFDE
D
atasheet number: DS35561 Rev. 5 - 2
4 of 7
www.diodes.com
October 2013
© Diodes Incorporated
DMN1019UFDE
ADVANCE INFORMATION
0 0.5 1.0 1.5 2.0
V , DRAIN-SOURCE VOLTAGE (V)
Fig. 4 Typical Output Characteristic
DS
0
5
10
15
20
25
30
I, D
R
AIN
C
U
R
R
EN
T
(A)
D
0 0.4 0.8 1.2 1.6 2.0
0
5
10
15
20
25
30
I, D
R
AI
N
C
U
R
R
E
N
T
(A)
D
V , GATE-SOURCE VOLTAGE
GS
Fig. 5 Typical Transfer Characteristics
V= 5.0V
DS
T = 150°C
A
T = 125°C
A
T = 85°C
A
T = 25°C
A
T = -55°C
A
0
0.004
0.008
0.012
0.016
0 5 10 15 20 25 30
I , DRAIN-SOURCE CURRENT
D
Fig. 6 Typical On-Resistance vs.
Drain Current and Gate Voltage
R
, D
R
AIN-S
O
U
R
CE
O
N-
R
ESISTANCE ( )
DS(ON)
V = 4.5V
GS
V = 2.5V
GS
V = 1.8V
GS
0
0.004
0.008
0.012
0.016
0.020
01 2 34 5 6 78
V , GATE VOLTAGE (V)
GS
Fig. 7 Typical On-Resistance vs. Gate Voltage
R
, D
R
AI
N
-S
O
U
R
C
E
O
N
-
R
ESIS
T
A
N
C
E ( )
DS(ON)
I = 9.7A
D
I = 4.5A
D
0
0.004
0.008
0.012
0.016
0.020
0 5 10 15 20 25 30
I , DRAIN CURRENT
D
Fig. 8 Typical On-Resistance vs.
Drain Current and Temperature
R , DRAIN-S
O
URCE
O
N-RESISTANCE ( )
DS(ON)
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
V = 4.5V
GS
0.6
0.8
1.0
1.2
1.4
2.0
R
, D
R
AIN-S
O
U
R
C
E
ON-RESISTANCE (NORMALIZED)
DS(ON)
1.6
1.8
50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)
Fig. 9 On-Resistance Variation with Temperature
J
V = 4.5V
I= 5A
GS
D
V=V
I= 10A
GS
D
10
DMN1019UFDE
D
atasheet number: DS35561 Rev. 5 - 2
5 of 7
www.diodes.com
October 2013
© Diodes Incorporated
DMN1019UFDE
ADVANCE INFORMATION
0
0.004
0.008
0.012
0.016
0.020
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)
Fig. 10 On-Resistance Variation with Temperature
J
R
, D
R
AI
N
-S
O
U
R
C
E
O
N
-
R
ESIS
T
A
N
C
E ( )
DS(ON)
V = 4.5V
I= 5A
GS
D
V=V
I = 10A
GS
D
10
0
0.2
0.4
0.6
0.8
1.0
1.2
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)
Fig. 11 Gate Threshold Variation vs. Ambient Temperature
J
V,
G
A
T
E
T
H
R
ES
H
O
LD V
O
L
T
A
G
E (V)
GS(th)
I= 1mA
D
I = 250µA
D
0 0.2 0.4 0.6 0.8 1.0 1.2
V , SOURCE-DRAIN VOLTAGE (V)
SD
Fig.12 Diode Forward Voltage vs. Current
0
5
10
15
20
25
30
I, S
O
U
R
C
E
C
U
R
R
E
N
T
(V)
S
T= 25°C
A
100
1,000
10,000
02 4 681012
V , DRAIN-SOURCE VOLTAGE (V)
DS
Fig. 13 Typical Junction Capacitance
C
, J
U
N
C
T
I
O
N
C
A
P
A
C
I
T
AN
C
E (pF)
T
C
iss
C
oss
C
rss
f = 1MHz
0
2
4
6
8
0 5 10 15 20 25 30 35 40 45 50
Q (nC)
g
, TOTAL GATE CHARGE
Fig. 14 Gate Charge
V
G
A
T
E
T
H
R
ES
H
O
LD V
O
L
T
A
G
E (V)
GS
V= -4V
I= A
DS
D
-10
DMN1019UFDE
D
atasheet number: DS35561 Rev. 5 - 2
6 of 7
www.diodes.com
October 2013
© Diodes Incorporated
DMN1019UFDE
ADVANCE INFORMATION
Package Outline Dimensions
Suggested Pad Layout
U-DFN2020-6
Type E
Dim Min Max Typ
A 0.57 0.63 0.60
A1 0 0.05 0.03
A3 — — 0.15
b 0.25 0.35 0.30
b1 0.185 0.285 0.235
D 1.95 2.05 2.00
D2 0.85 1.05 0.95
E 1.95 2.05 2.00
E2 1.40 1.60 1.50
e — — 0.65
L 0.25 0.35 0.30
L1 0.82 0.92 0.87
K1 — — 0.305
K2 — — 0.225
Z — — 0.20
All Dimensions in mm
Dimensions
Value
(in mm)
C 0.650
X 0.400
X1 0.285
X2 1.050
Y 0.500
Y1 0.920
Y2 1.600
Y3 2.300
A1
Z(4X)
b1
L1
K1
K2
D
D2
E
e
b(6X)
L(2X)
E2
A
A3
X1
Y3
X (6x)
C
X2
Y1
Y2
Y (2x)
P1-P3P4-P6P7-P7

DMN1019UFDE-7

Mfr. #:
Buy DMN1019UFDE-7
Manufacturer:
Diodes Incorporated
Description:
MOSFET MOSFET BVDSS: 8V-24V U-DFN2020-6 T&R 3K
Lifecycle:
New from this manufacturer.
Delivery:
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