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SIHF18N50D-E3

P1-P3P4-P6P7-P8
SiHF18N50D
www.vishay.com
Vishay Siliconix
S16-1602-Rev. B, 15-Aug-16
1
Document Number: 91507
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
D Series Power MOSFET
FEATURES
• Optimal design
- Low area specific on-resistance
- Low input capacitance (C
iss
)
- Reduced capacitive switching losses
- High body diode ruggedness
- Avalanche energy rated (UIS)
• Optimal efficiency and operation
- Low cost
- Simple gate drive circuitry
- Low figure-of-merit (FOM): R
on
x Q
g
- Fast switching
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
Note
*
This datasheet provides information about parts that are
RoHS-compliant and / or parts that are non-RoHS-compliant. For
example, parts with lead (Pb) terminations are not RoHS-compliant.
Please see the information / tables in this datasheet for details.
APPLICATIONS
• Consumer electronics
- Displays (LCD or Plasma TV)
• Server and telecom power supplies
- SMPS
• Industrial
- Welding
- Induction heating
- Motor drives
• Battery chargers
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature.
b. V
DD
= 50 V, starting T
J
= 25 °C, L = 2.3 mH, R
g
= 25 , I
AS
= 10 A.
c. 1.6 mm from case.
d. I
SD
I
D
, starting T
J
= 25 °C.
e. Limited by maximum junction temperature.
PRODUCT SUMMARY
V
DS
(V) at T
J
max. 550
R
DS(on)
max. () at 25 °C V
GS
= 10 V 0.28
Q
g
max. (nC) 76
Q
gs
(nC) 11
Q
gd
(nC) 17
Configuration Single
N-Channel MOSFET
G
D
S
S
D
G
TO-220 FULLPAK
Available
ORDERING INFORMATION
Package TO-220 FULLPAK
Lead (Pb)-free SiHF18N50D-E3
ABSOLUTE MAXIMUM RATINGS (T
C
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
DS
500
V Gate-Source Voltage
V
GS
± 30
Gate-Source Voltage AC (f > 1 Hz) 30
Continuous Drain Current (T
J
= 150 °C)
e
V
GS
at 10 V
T
C
= 25 °C
I
D
18
AT
C
= 100 °C 11
Pulsed Drain Current
a
I
DM
53
Linear Derating Factor 0.3 W/°C
Single Pulse Avalanche Energy
b
E
AS
115 mJ
Maximum Power Dissipation P
D
39 W
Operating Junction and Storage Temperature Range T
J
, T
stg
-55 to +150 °C
Drain-Source Voltage Slope T
J
= 125 °C
dV/dt
24
V/ns
Reverse Diode dV/dt
d
0.4
Soldering Recommendations (Peak temperature)
c
For 10 s 300 °C
Mounting Torque M3 screw 0.6 Nm
SiHF18N50D
www.vishay.com
Vishay Siliconix
S16-1602-Rev. B, 15-Aug-16
2
Document Number: 91507
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
a. C
oss(er)
is a fixed capacitance that gives the same energy as C
oss
while V
DS
is rising from 0 % to 80 % V
DSS
.
b. C
oss(tr)
is a fixed capacitance that gives the same charging time as C
oss
while V
DS
is rising from 0 % to 80 % V
DSS
.
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYP. MAX. UNIT
Maximum Junction-to-Ambient R
thJA
-65
°C/W
Maximum Junction-to-Case (Drain) R
thJC
-3.2
SPECIFICATIONS (T
J
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage V
DS
V
GS
= 0 V, I
D
= 250 μA 500 - - V
V
DS
Temperature Coefficient V
DS
/T
J
Reference to 25 °C, I
D
= 250 μA - 0.58 - V/°C
Gate Threshold Voltage (N) V
GS(th)
V
DS
= V
GS
, I
D
= 250 μA 3.0 - 5.0 V
Gate-Source Leakage I
GSS
V
GS
= ± 30 V - - ± 100 nA
Zero Gate Voltage Drain Current I
DSS
V
DS
= 500 V, V
GS
= 0 V - - 1
μA
V
DS
= 400 V, V
GS
= 0 V, T
J
= 125 °C - - 10
Drain-Source On-State Resistance R
DS(on)
V
GS
= 10 V I
D
= 9 A - 0.23 0.28
Forward Transconductance g
fs
V
DS
= 50 V, I
D
= 9 A - 6.4 - S
Dynamic
Input Capacitance C
iss
V
GS
= 0 V,
V
DS
= 100 V,
f = 1.0 MHz
- 1500 -
pF
Output Capacitance C
oss
- 131 -
Reverse Transfer Capacitance C
rss
-14-
Effective Output Capacitance, Energy
Related
a
C
o(er)
V
GS
= 0 V, V
DS
= 0 V to 400 V
- 113 -
Effective Output Capacitance, Time
Related
b
C
o(tr)
- 164 -
Total Gate Charge Q
g
V
GS
= 10 V I
D
= 9 A, V
DS
= 400 V
-3876
nC Gate-Source Charge Q
gs
-11-
Gate-Drain Charge Q
gd
-17-
Turn-On Delay Time t
d(on)
V
DD
= 400 V, I
D
= 9 A,
V
GS
= 10 V, R
g
= 9.1
-1938
ns
Rise Time t
r
-3672
Turn-Off Delay Time t
d(off)
-3672
Fall Time t
f
-3060
Gate Input Resistance R
g
f = 1 MHz, open drain - 1.7 -
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current I
S
MOSFET symbol
showing the
integral reverse
P - N junction diode
--18
A
Pulsed Diode Forward Current I
SM
--72
Diode Forward Voltage V
SD
T
J
= 25 °C, I
S
= 9 A, V
GS
= 0 V - - 1.2 V
Reverse Recovery Time t
rr
T
J
= 25 °C, I
F
= I
S
= 9 A,
dI/dt = 100 A/μs, V
R
= 20 V
- 354 - ns
Reverse Recovery Charge Q
rr
-3.9-μC
Reverse Recovery Current I
RRM
-21-A
S
D
G
SiHF18N50D
www.vishay.com
Vishay Siliconix
S16-1602-Rev. B, 15-Aug-16
3
Document Number: 91507
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Fig. 1 - Typical Output Characteristics
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
0
10
20
30
40
50
60
0 5 10 15 20 25 30
I
D
, Drain -to -Source Current (A)
V
DS
, Drain -to -Source Voltage (V)
TOP 15V
14V
13V
12V
11V
10V
9.0V
8.0V
7.0V
6.0V
T
J
= 25 °C
5.0 V
0
8
16
24
32
40
0 5 10 15 20 25 30
I
D
, Drain-to-Source Current (A)
V
DS
, Drain-to-Source Voltage (V)
TOP 15V
14V
13V
12V
11V
10V
9.0V
8.0V
7.0V
6.0V
BOTYTOM 5.0V
T
J
= 150 °C
5.0 V
0
10
20
30
40
50
60
0 5 10 15 20 25
I
D
, Drain- to-Source Current (A)
V
GS
, Gate
--to-Source Voltage (V)
T
J
= 150 °C
T
J
= 25 °C
0
0.5
1
1.5
2
2.5
3
-60 -40 -20 0 20 40 60 80 100 120 140 160
R
DS(on)
, Drain-to-Source
On Resistance (Normalized)
T
J
, Junction Temperature (°C)
I
D
= 9 A
V
GS
= 10 V
1
10
100
1000
10 000
0 100 200 300 400 500
ġ
V
GS
= 0 V, f = 1 MHz
C
iss
= C
gs
+ C
gd
, C
ds
Shorted
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
Capacitance (pF)
V
DS
, Drain-to-Source Voltage (V)
C
iss
C
oss
C
rss
ġġ
0
4
8
12
16
20
24
0 10 20 30 40 50 60 70
V
DS
= 400 V
V
DS
= 250 V
V
DS
= 100 V
V
GS
, Gate-to-Source Voltage (V)
Q
g
, Total Gate Charge (nC)
P1-P3P4-P6P7-P8

SIHF18N50D-E3

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Manufacturer:
Vishay / Siliconix
Description:
MOSFET 500V Vds 30V Vgs TO-220 FULLPAK
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New from this manufacturer.
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