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MWI 30-06 A7
MWI 30-06 A7T
IXYS reserves the right to change limits, test conditions and dimensions.
20070912a
Features
●
NPT IGBT technology
●
low saturation voltage
●
low switching losses
●
switching frequency up to 30 kHz
●
square RBSOA, no latch up
●
high short circuit capability
●
positive temperature coefficient for
easy parallelling
●
MOS input, voltage controlled
●
ultra fast free wheeling diodes
●
solderable pins for PCB mounting
●
package with copper base plate
Advantages
●
space savings
●
reduced protection circuits
●
package designed for wave soldering
Typical Applications
●
AC motor control
●
AC servo and robot drives
●
power supplies
IGBTs
Symbol Conditions Maximum Ratings
V
CES
T
VJ
= 25°C to 150°C 600 V
V
GES
±
20 V
I
C25
T
C
= 25°C 45 A
I
C80
T
C
= 80°C 30 A
RBSOA V
GE
=
±
15 V; R
G
= 33 Ω; T
VJ
= 125°C I
CM
= 60 A
Clamped inductive load; L = 100 µH V
CEK
≤ V
CES
t
SC
V
CE
= V
CES
; V
GE
=
±
15 V; R
G
= 33 Ω; T
VJ
= 125°C 10 µs
(SCSOA) non-repetitive
P
tot
T
C
= 25°C 140 W
Symbol Conditions Characteristic Values
(T
VJ
= 25°C, unless otherwise specified)
min. typ. max.
V
CE(sat)
I
C
= 30 A; V
GE
= 15 V; T
VJ
= 25°C 1.9 2.4 V
T
VJ
= 125°C 2.2 V
V
GE(th)
I
C
= 0.7 mA; V
GE
= V
CE
4.5 6.5 V
I
CES
V
CE
= V
CES
;
V
GE
= 0 V; T
VJ
= 25°C 0.6 mA
T
VJ
= 125°C 0.5 mA
I
GES
V
CE
= 0 V; V
GE
=
±
20 V 200 nA
t
d(on)
50 ns
t
r
50 ns
t
d(off)
270 ns
t
f
40 ns
E
on
1.4 mJ
E
off
1.0 mJ
C
ies
V
CE
= 25 V; V
GE
= 0 V; f = 1 MHz 1600 pF
Q
Gon
V
CE
= 300V; V
GE
= 15 V; I
C
= 30 A 150 nC
R
thJC
(per IGBT) 0.88 K/W
Inductive load, T
VJ
= 125°C
V
CE
= 300 V; I
C
= 30 A
V
GE
=
±
15 V; R
G
= 33 Ω
I
C25
= 45 A
V
CES
= 600 V
V
CE(sat) typ.
= 1.9 V
IGBT Modules
Sixpack
Short Circuit SOA Capability
Square RBSOA
Type: NTC - Option:
MWI 30-06 A7 without NTC
MWI 30-06 A7T with NTC
See outline drawing for pin arrangement
E72873
NTC
13
17
1
2
3
4
7
8
9
10
11
12
5
6
15
16
14
T
T
