MWI30-06A7

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MWI 30-06 A7
MWI 30-06 A7T
IXYS reserves the right to change limits, test conditions and dimensions.
20070912a
MWI 30-06 A7
MWI 30-06 A7T
Fig. 7 Typ. turn on energy and switching Fig. 8 Typ. turn off energy and switching
times versus collector current times versus collector current
Fig. 9 Typ. turn on energy and switching Fig.10 Typ. turn off energy and switching
times versus gate resistor times versus gate resistor
Fig. 11 Reverse biased safe operating area Fig. 12 Typ. transient thermal impedance
RBSOA
0204060
0
2
4
6
8
0
20
40
60
80
0204060
0.0
0.5
1.0
1.5
2.0
0
100
200
300
400
0.00001 0.0001 0.001 0.01 0.1 1 10
0.0001
0.001
0.01
0.1
1
10
0 1020304050607080
0.0
0.5
1.0
1.5
2.0
0
100
200
300
400
0 1020304050607080
0
1
2
3
4
20
40
60
80
single pulse
V
CE
= 300V
V
GE
= ±15V
R
G
= 33Ω
T
VJ
= 125°C
MWI3006A7
V
CE
= 300V
V
GE
= ±15V
I
C
= 30A
T
VJ
= 125°C
0 100 200 300 400 500 600 700
0
20
40
60
80
R
G
= 33 Ω
T
VJ
= 125°C
V
CE
= 300V
V
GE
= ±15V
R
G
= 33Ω
T
VJ
= 125°C
E
on
V
CE
= 300V
V
GE
= ±15V
I
C
= 30A
T
VJ
= 125°C
t
d(on)
t
r
E
off
t
d(off)
t
f
E
on
t
d(on)
t
r
E
off
t
d(off)
t
f
I
C
A
I
C
A
E
off
E
on
t
t
R
G
Ω
R
G
Ω
V
CE
t
s
mJ
E
on
mJ
E
off
ns
t
ns
t
I
CM
K/W
Z
thJC
IGBT
diode
V
A
mJ
ns
ns
mJ

MWI30-06A7

Mfr. #:
Manufacturer:
Littelfuse
Description:
Discrete Semiconductor Modules 30 Amps 600V
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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