STP150NF04 Electrical ratings
Doc ID 14848 Rev 3 3/12
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
V
DS
Drain-source voltage (V
GS
= 0) 40 V
V
GS
Gate- source voltage ± 20 V
I
D
(1)
1. Current limited by package
Drain current (continuous) at T
C
= 25 °C 80 A
I
D
(1)
Drain current (continuous) at T
C
= 100 °C 80 A
I
DM
(2)
2. Pulse width limited by safe operating area
Drain current (pulsed) 320 A
P
tot
Total dissipation at T
C
= 25 °C 300 W
Derating factor 2 W/°C
dv/dt
(3)
3. I
SD
≤ 80A, di/dt ≤ 300 A/µs, V
DD
= 80%V
(BR)DSS
Peak diode recovery voltage slope 2 V/ns
E
AS
(4)
4. Starting Tj = 25 °C, I
D
= 40 A, V
DD
=30 V
Single pulse avalanche energy 0.6 J
T
stg
Storage temperature
-55 to 175 °C
T
j
Max. operating junction temperature
Table 3. Thermal resistance
Symbol Parameter Value Unit
R
thj-case
Thermal resistance junction-case max 0.5 °C/W
R
thj-pcb
(1)
1. When mounted on 1inch² FR-4 board, 2 oz of Cu
Thermal resistance junction-pcb max 35 °C/W
