OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

STP150NF04

P1-P3P4-P6P7-P9P10-P12
Electrical characteristics STP150NF04
4/12 Doc ID 14848 Rev 3
2 Electrical characteristics
(T
CASE
=25°C unless otherwise specified)
Table 4. On/off states
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source breakdown
voltage
I
D
= 250 µA, V
GS
= 0 40 V
I
DSS
Zero gate voltage drain
current (V
GS
= 0)
V
DS
= 40 V
V
DS
= 40 V @ T
j
= 125 °C
1
10
µA
µA
I
GSS
Gate-body leakage
current (V
DS
= 0)
V
GS
= ± 20 V ±100 nA
V
GS(th)
Gate threshold voltage V
DS
= V
GS,
I
D
= 250 µA 2 4 V
R
DS(on)
Static drain-source on-
resistance
V
GS
= 10 V, I
D
= 40 A 0.005 0.007 Ω
Table 5. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
g
fs
(1)
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
Forward transconductance V
DS
= 15 V, I
D
= 15 A - 90 - S
C
iss
C
oss
C
rss
Input capacitance
Output capacitance
Reverse transfer
capacitance
V
DS
= 25 V, f =1 MHz
V
GS
=0
-
3650
1145
400
-
pF
pF
pF
Q
g
Q
gs
Q
gd
Total gate charge
Gate-source charge
Gate-drain charge
V
DD
=32 V, I
D
=80 A,
V
GS
=10 V
(see Figure 14)
-
118
20
45
150 nC
nC
nC
Table 6. Switching times
Symbol Parameter Test conditions Min. Typ. Max. Unit
t
d(on)
t
r
t
d(off)
t
f
Turn-on delay time
Rise time
Turn-off delay time
Fall time
V
DD
= 25 V, I
D
= 40 A
R
G
=4.7 Ω, V
GS
= 10 V
(see Figure 13)
-
15
150
70
45
-
ns
ns
ns
ns
STP150NF04 Electrical characteristics
Doc ID 14848 Rev 3 5/12
Table 7. Source drain diode
Symbol Parameter Test conditions Min. Typ. Max. Unit
I
SD
Source-drain current - 80 A
I
SDM
(1)
1. Pulse width limited by safe operating area
Source-drain current (pulsed) I
SD
= 80 A, V
GS
= 0 - 320 A
V
SD
(2)
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
Forward on voltage I
SD
= 80 A, V
GS
= 0 - 1.3
ns
nC
A
t
rr
Q
rr
I
RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
SD
= 80 A,
di/dt=100 A/µs
V
DD
= 25 V, T
j
= 150 °C
(see Figure 15)
-
73
170
4.6
ns
nC
A
Electrical characteristics STP150NF04
6/12 Doc ID 14848 Rev 3
2.1 Electrical characteristics (curves)
Figure 2. Safe operating area Figure 3. Thermal impedance
Figure 4. Output characteristics Figure 5. Transfer characteristics
Figure 6. Normalized BV
DSS
vs temperature Figure 7. Static drain-source on-resistance
0.1
1
10
100
I
D(A)
V
DS(V)
0
1
1
1.
0
HV42440
Operation in this Area is
Limited by Max R
DS(on)
100µs
1ms
10ms
TJ=150°C
T
C=25°C
Single pulse
0
25
50
75
100
125
150
175
200
225
I
D
(A)
0
123
4567
8
9
V
DS
(V)
HV42470
4V
5V
6V
V
GS
=10V
0
25
50
75
100
125
150
175
200
225
I
D(A)
0
12
3 4
56
7 8 9V
GS(V)
HV42475
VDS=10V
4.0
4.5
5.0
5.5
6.0
6.5
7.0
(Ω)
R
DS
(on)
0
10
20 30
40
50
60
70 80
I
D
(A)
HV42430
V
GS
=10V
P1-P3P4-P6P7-P9P10-P12

STP150NF04

Mfr. #:
Buy STP150NF04
Manufacturer:
STMicroelectronics
Description:
MOSFET N-Channel 40 V StripFET II Pwr Mos
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet