Nexperia
PBHV9540X
400 V, 0.5 A PNP high-voltage low VCEsat (BISS) transistor
PBHV9540X All information provided in this document is subject to legal disclaimers.
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Nexperia B.V. 2017. All rights reserved
Product data sheet 28 September 2017 3 / 13
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
CBO
collector-base voltage open emitter - -400 V
V
CEO
collector-emitter voltage open base - -400 V
V
CESM
collector-emitter peak
voltage
V
BE
= 0 V - -400 V
V
EBO
emitter-base voltage open collector - -7 V
I
C
collector current - -0.5 A
I
CM
peak collector current single pulse; t
p
≤ 1 ms - -1 A
I
B
base current - -250 mA
[1] - 0.52 WP
tot
total power dissipation T
amb
≤ 25 °C
[2] - 1.5 W
T
j
junction temperature - 150 °C
T
amb
ambient temperature -55 150 °C
T
stg
storage temperature -65 150 °C
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm
2
.
T
amb
(°C)
- 75 17512525 75- 25
006aab846
0.8
1.2
0.4
1.6
2.0
P
tot
(W)
0.0
(2)
(1)
(1) FR4 PCB, mounting pad for collector 6 cm
2
(2) FR4 PCB, standard footprint
Fig. 1. Power derating curves
