Nexperia
PBHV9540X
400 V, 0.5 A PNP high-voltage low VCEsat (BISS) transistor
PBHV9540X All information provided in this document is subject to legal disclaimers.
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Nexperia B.V. 2017. All rights reserved
Product data sheet 28 September 2017 7 / 13
aaa-027299
-1
-10
-1
-10
V
CEsat
(V)
-10
-2
I
C
(mA)
-10
-1
-10
3
-10
2
-1 -10
(1)
(3)
(2)
I
C
/I
B
= 5
(1) T
amb
= 100 °C
(2) T
amb
= 25 °C
(3) T
amb
= -55 °C
Fig. 8. Collector-emitter saturation voltage as a
function of collector current; typical values
aaa-027300
-1
-10
-1
-10
V
CEsat
(V)
-10
-2
I
C
(mA)
-10
-1
-10
3
-10
2
-1 -10
(1)
(3)
(2)
T
amb
= 25 °C
(1) I
C
/I
B
= 20
(2) I
C
/I
B
= 10
(3) I
C
/I
B
= 5
Fig. 9. Collector-emitter saturation voltage as a
function of collector current; typical values
aaa-027301
I
C
(mA)
10
-1
10
3
10
2
1 10
1
10
10
2
10
3
R
CEsat
(Ω)
10
-1
(1)
(3)
(2)
I
C
/I
B
= 5
(1) T
amb
= 100 °C
(2) T
amb
= 25 °C
(3) T
amb
= -55 °C
Fig. 10. Collector-emitter saturation resistance as a
function of collector current; typical values
I
C
(mA)
10
-1
10
4
10
3
1 10
2
10
aaa-027302
10
1
10
3
10
2
10
4
R
CEsat
(Ω)
10
-1
(1)
(3)
(2)
T
amb
= 25 °C
(1) I
C
/I
B
= 20
(2) I
C
/I
B
= 10
(3) I
C
/I
B
= 5
Fig. 11. Collector-emitter saturation resistance as a
function of collector current; typical values
