DRDPB16W-7 Datasheet DRDN005W-7, DRDN010W-7, DRDNB16W-7 | P1-P3

DRD (xxxx) W

COMPLEX ARRAY FOR RELAY DRIVERS

Features

• Epitaxial Planar Die Construction

• One Transistor and One Sw

itching Diode in One Package

• Lead Free By

Design/RoHS Compliant (Note 1)

• "Green" Dev

ice (Note 2)

Mechanical Data

• Case: SOT-363

• Case Material: Molded Plastic. "Green" Molding

Compound. UL Flammability

Classification Rating 94V-0

• Moisture Sensitivity

: Level 1 per J-STD-020D

• Terminal Connections: See Diagram

• Terminals: Finish - Matte Tin annealed over Alloy

42

leadframe. Solderable per MIL-STD-202, Method 208

• Marking Information: See Page 8

• Ordering Information: See Page 8

• Weight: 0.008 grams (approximate)

P/N R1 (NOM) R2 (NOM)

DRDNB16W

DRDPB16W

DRDNB26W

DRDPB26W

1K

220

10K

4.7K

SOT-363

Dim Min Max

A 0.10 0.30

B 1.15 1.35

C 2.00 2.20

D 0.65 Nominal

F 0.30 0.40

H 1.80 2.20

J

⎯

0.10

K 0.90 1.00

L 0.25 0.40

M 0.10 0.25

α

0°

8°

All Dimensions in mm

A

M

J

L

D

B C

H

K

F

R1

R2

R1

R2

DRDN010W/

DRDN005W

DRDP006W

DRDNB16W/

DRDNB26W

DRDPB16W/

DRDPB26W

Maximum Ratings, Total Device @T

A

= 25°C unless otherwise specified

Characteristic Symbol Value Unit

Power Dissipation (Note 3)

P

D

200 mW

Thermal Resistance, Junction to Ambient Air (Note 3)

R

θ

JA

625

°C/W

Operating and Storage Temperature Range

T

J

, T

STG

-55 to +150

°C

Maximum Ratings, DRDN010W NPN Transistor @T

A

= 25°C unless otherwise specified

Characteristic Symbol Value Unit

Collector-Base Voltage

V

CBO

45 V

Collector-Emitter Voltage

V

CEO

18 V

Emitter-Base Voltage

V

EBO

5 V

Collector Current (Note 3)

I

C

1000 mA

Maximum Ratings, DRDN005W NPN Transistor @T

A

= 25°C unless otherwise specified

Characteristic Symbol Value Unit

Collector-Base Voltage

V

CBO

80 V

Collector-Emitter Voltage

V

CEO

80 V

Emitter-Base Voltage

V

EBO

4.0 V

Collector Current – Continuous (Note 3)

I

C

500 mA

Notes: 1. No purposefully added lead.

2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

3. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which

can be found on page 9 or our website at http://www.diodes.com/datasheets/ap02001.pdf.

DS30573 Rev. 10 - 2

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Maximum Ratings, DRDP006W PNP Transistor @T

A

= 25°C unless otherwise specified

Characteristic Symbol Value Unit

Collector-Base Voltage

V

CBO

-60 V

Collector-Emitter Voltage

V

CEO

-60 V

Emitter-Base Voltage

V

EBO

-5.0 V

Collector Current (Note 3)

I

C

-600 mA

Maximum Ratings, DRDNB16W Pre-Biased NPN Transistor @T

A

= 25°C unless otherwise specified

Characteristic Symbol Value Unit

Supply Voltage

V

CC

50 V

Input Voltage

V

IN

-5 to +10 V

Output Current

I

C

600 mA

Maximum Ratings, DRDNB26W Pre-Biased NPN Transistor @T

A

= 25°C unless otherwise specified

Characteristic Symbol Value Unit

Supply Voltage

V

CC

50 V

Input Voltage

V

IN

-5 to +5 V

Output Current

I

C

600 mA

Maximum Ratings, DRDPB16W Pre-Biased PNP Transistor @T

A

= 25°C unless otherwise specified

Characteristic Symbol Value Unit

Supply Voltage

V

CC

-50 V

Input Voltage

V

IN

+5 to -10 V

Output Current

I

C

600 mA

Maximum Ratings, DRDPB26W Pre-Biased PNP Transistor @T

A

= 25°C unless otherwise specified

Characteristic Symbol Value Unit

Supply Voltage

V

CC

-50 V

Input Voltage

V

IN

+5 to -5 V

Output Current

I

C

-600 mA

Maximum Ratings, Switching Diode @T

A

= 25°C unless otherwise specified

Characteristic Symbol Value Unit

Non-Repetitive Peak Reverse Voltage

V

RM

100 V

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

V

RRM

V

RWM

V

R

75 V

RMS Reverse Voltage

V

R(RMS)

53 V

Forward Continuous Current (Note 3)

I

FM

500 mA

Average Rectified Output Current (Note 3)

I

O

250 mA

Non-Repetitive Peak Forward Surge Current @ t = 1.0μs

@ t = 1.0s

I

FSM

4.0

2.0

A

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Electrical Characteristics, DRDN010W NPN Transistor @T

A

= 25°C unless otherwise specified

Characteristic Symbol Min Max Unit Test Condition

DC Current Gain

h

FE

150 800

⎯

I

C

= 100mA, V

CE

= 1V

Collector-Emitter Saturation Voltage

V

CE(SAT)

⎯

0.5 V

I

C

= 300mA, I

B

= 30mA

Collector-Base Breakdown Voltage

V

(BR)CBO

45

⎯

V

I

C

= 100μA, I

E

= 0

Collector-Emitter Breakdown Voltage

V

(BR)CEO

18

⎯

V

I

C

= 1mA, I

B

= 0

Emitter-Base Breakdown Voltage

V

(BR)EBO

5

⎯

V

I

E

= 100μA, I

C

= 0

Collector Cutoff Current

I

CBO

⎯

1

μA

V

CB

= 40V, I

E

= 0

Emitter Cutoff Current

I

EBO

⎯

1

μA

V

EB

= 4V, I

C

= 0

Current Gain-Bandwidth Product

f

T

100

⎯

MHz

V

CE

= 10V, I

C

= 50mA, f = 100MHz

Capacitance

C

obo

⎯

8 pF

V

CB

= 10V, I

E

= 0, f = 1MHz

Electrical Characteristics, DRDN005W NPN Transistor @T

A

= 25°C unless otherwise specified

Characteristic Symbol Min Max Unit Test Condition

Collector-Base Breakdown Voltage

V

(BR)CBO

80

⎯

V

I

C

= 100μA, I

E

= 0

Collector-Emitter Breakdown Voltage

V

(BR)CEO

80

⎯

V

I

C

= 1.0mA, I

B

= 0

Emitter-Base Breakdown Voltage

V

(BR)EBO

4.0

⎯

V

I

E

= 100μA, I

C

= 0

Collector Cutoff Current

I

CBO

⎯

100 nA

V

CB

= 60V, I

E

= 0

V

CB

= 80V, I

E

= 0

Collector Cutoff Current

I

CES

⎯

100 nA

V

CE

= 60V, I

BO

= 0V

V

CE

= 80V, I

BO

= 0V

DC Current Gain

h

FE

100

⎯ ⎯

I

C

= 10mA, V

CE

= 1.0V

I

C

= 100mA, V

CE

= 1.0V

Collector-Emitter Saturation Voltage

V

CE(SAT)

⎯

0.25 V

I

C

= 100mA, I

B

= 10mA

Base-Emitter Saturation Voltage

V

BE(SAT)

⎯

1.2 V

I

C

= 100mA, V

CE

= 1.0V

Current Gain-Bandwidth Product

f

T

100

⎯

MHz

V

CE

= 2.0V, I

C

= 10mA,

f = 100MHz

Electrical Characteristics, DRDP006W PNP Transistor @T

A

= 25°C unless otherwise specified

Characteristic Symbol Min Max Unit Test Condition

DC Current Gain

h

FE

100 300

⎯

I

C

= -150mA, V

CE

= -10V

Collector-Emitter Saturation Voltage

V

CE(SAT)

⎯

-0.4 V

I

C

= -150mA, I

B

= -15mA

Collector-Base Breakdown Voltage

V

(BR)CBO

-60

⎯

V

I

C

= -10μA, I

E

= 0

Collector-Emitter Breakdown Voltage

V

(BR)CEO

-60

⎯

V

I

C

= -10mA, I

B

= 0

Emitter-Base Breakdown Voltage

V

(BR)EBO

-5

⎯

V

I

E

= -10μA, I

C

= 0

Collector Cutoff Current

I

CBO

⎯

-10 nA

V

CB

= -50V, I

E

= 0

Current Gain-Bandwidth Product

f

T

200

⎯

MHz

V

CE

= -20V, I

C

= -50mA, f = 100MHz

Capacitance

C

obo

⎯

8 pF

V

CB

= -10V, I

E

= 0, f = 1MHz

Electrical Characteristics, DRDNB16W Pre-Biased NPN Transistor @T

A

= 25°C unless otherwise specified

Characteristic Symbol Min Typ Max Unit Test Condition

V

l(off)

0.3

⎯ ⎯

V

CC

= 5V, I

O

= 100μA

Input Voltage

V

l(on)

⎯ ⎯

2.0 V

V

O

= 0.3V, I

O

= 20mA

Output Voltage

V

O(on)

⎯ ⎯

0.3V V

I

O

/I

l

= 50mA/2.5mA

Input Current

I

l

⎯ ⎯

7.2 mA

V

I

= 5V

Output Current

I

O(off)

⎯ ⎯

0.5

μA

V

CC

= 50V, V

I

= 0V

DC Current Gain

G

l

56

⎯ ⎯ ⎯

V

O

= 5V, I

O

= 50mA

Gain-Bandwidth Product

f

T

⎯

200

⎯

MHz

V

CE

= 10V, I

E

= 5mA, f = 100MHz

DRDPB16W-7

DRDPB16W-7

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