OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

DRDPB16W-7

P1-P3P4-P6P7-P9
DS30573 Rev. 10 - 2
4 of 9
www.diodes.com
DRD (xxxx) W
© Diodes Incorporated
Electrical Characteristics, DRDNB26W Pre-Biased NPN Transistor @T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
V
l(off)
0.5
⎯ ⎯
V
V
CC
= 5V, I
O
= 100μA
Input Voltage
V
l(on)
⎯ ⎯
3.0 V
V
O
= 0.3V, I
O
= 20mA
Output Voltage
V
O(on)
⎯ ⎯
0.3V V
I
O
/I
l
= 50mA/2.5mA
Input Current
I
l
⎯ ⎯
28 mA
V
I
= 5V
Output Current
I
O(off)
⎯ ⎯
0.5
μA
V
CC
= 50V, V
I
= 0V
DC Current Gain
G
l
47
⎯ ⎯ ⎯
V
O
= 5V, I
O
= 50mA
Gain-Bandwidth Product
f
T
⎯
200
⎯
MHz
V
CE
= 10V, I
E
= 5mA, f = 100MHz
Electrical Characteristics, DRDPB16W Pre-Biased PNP Transistor @T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
V
l(off)
-0.3
⎯ ⎯
V
V
CC
= -5V, I
O
= -100μA
Input Voltage
V
l(on)
⎯ ⎯
-2.0 V
V
O
= -0.3V, I
O
= -20mA
Output Voltage
V
O(on)
⎯ ⎯
-0.3V V
I
O
/I
l
= -50mA/-2.5mA
Input Current
I
l
⎯ ⎯
-7.2 mA
V
I
= -5V
Output Current
I
O(off)
⎯ ⎯
-0.5
μA
V
CC
= -50V, V
I
= 0V
DC Current Gain
G
l
56
⎯ ⎯ ⎯
V
O
= -5V, I
O
= -50mA
Gain-Bandwidth Product
f
T
⎯
200
⎯
MHz
V
CE
= -10V, I
E
= -5mA, f = 100MHz
Electrical Characteristics, DRDPB26W Pre-Biased PNP Transistor @T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
V
l(off)
-0.5
⎯ ⎯
V
V
CC
= -5V, I
O
= -100μA
Input Voltage
V
l(on)
⎯ ⎯
-3.0 V
V
O
= -0.3V, I
O
= -20mA
Output Voltage
V
O(on)
⎯ ⎯
-0.3V V
I
O
/I
l
= -50mA/-2.5mA
Input Current
I
l
⎯ ⎯
-28 mA
V
I
= -5V
Output Current
I
O(off)
⎯ ⎯
-0.5
μA
V
CC
= -50V, V
I
= 0V
DC Current Gain
G
l
47
⎯ ⎯ ⎯
V
O
= -5V, I
O
= -50mA
Gain-Bandwidth Product
f
T
⎯
200
⎯
MHz
V
CE
= -10V, I
E
= -5mA, f = 100MHz
Electrical Characteristics, Switching Diode @T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Max Unit Test Condition
Reverse Breakdown Voltage (Note 4)
V
(BR)R
75
⎯ ⎯
I
R
= 10μA
Forward Voltage
V
F
0.62
⎯
⎯
⎯
0.72
0.855
1.0
1.25
V
I
F
= 5.0mA
I
F
= 10mA
I
F
= 100mA
I
F
= 150mA
Reverse Current (Note 4)
I
R
⎯
2.5
50
30
25
μA
μA
μA
nA
V
R
= 75V
V
R
= 75V, T
J
= 150°C
V
R
= 25V, T
J
= 150°C
V
R
= 20V
Total Capacitance
C
T
⎯
4.0 pF
V
R
= 0, f = 1.0MHz
Reverse Recovery Time
t
rr
⎯
4.0 ns
I
F
= I
R
= 10mA,
I
rr
= 0.1 x I
R
, R
L
= 100Ω
Notes: 4. Short duration pulse test used to minimize self-heating effect.
Device Characteristics
DS30573 Rev. 10 - 2
5 of 9
www.diodes.com
DRD (xxxx) W
© Diodes Incorporated
0
50
100
40
200
P
,
P
O
WE
R
DISSI
P
A
T
I
O
N (mW)
D
T , AMBIENT TEMPERATURE (°C)
Fig. 1, Power Derating Curve (Total Device)
A
150
200
250
0
80 120 160
R = 625°C/W
θ
JA
1
1,000
100
0.0001 0.001 0.01 1 100.1
h,
D
C
C
U
R
R
E
N
T
G
AI
N
FE
I , COLLECTOR CURRENT (A)
Fig. 2, Typical DC Current Gain
vs. Collector Current (DRDN010W)
C
V = 1.0V
CE
1
100
10
0.1
1
10
100
C
,
O
U
T
P
U
T
C
A
P
A
C
I
T
AN
C
E (p
F
)
OBO
V , COLLECTOR-BASE VOLTAGE (V)
Fig. 3, Typical Output Capacitance vs.
Collector-Base Voltage (DRDN010W)
CB
f = 1MHz
1
10
1,000
100
0.0001
0.001
0.01 0.1
1
10
V,
C
O
LLE
C
T
O
R
-EMI
T
T
E
R
SATURATION VOLTAGE (mV)
CE (SAT)
I , COLLECTOR CURRENT (A)
Fig. 4, Typical Collector Saturation Voltage vs.
Collector Current (DRDN010W)
C
I , COLLECTOR-BASE CURRENT (nA)
CBO
T , AMBIENT TEMPERATURE (ºC)
Fig. 5, Typical Collector-Cutoff Current
vs. Ambient Temperature (DRDN005W)
A
10
0.01
0.1
1
25 50 75 100 125
0.001 0.01
I BASE CURRENT (mA)
Fig. 6, Typical Collector Saturation Region
B,
(DRDN005W)
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0.1
1
10 100
V,
C
O
LLE
C
T
O
R
EMI
T
T
E
R
V
O
L
T
A
G
E (V)
CE
I = 1mA
C
I = 10mA
C
I = 30mA
C
I = 100mA
C
110
100
1,000
V,
C
O
LLE
C
T
O
R
-E
M
I
T
T
E
R
SATURATION VOLTAGE (V)
CE(SAT)
I , COLLECTOR CURRENT (mA)
Fig. 7, Typical Collector-Emitter Saturation Voltage
vs. Collector Current (DRDN005W)
C
T = 25°C
A
T = -50°C
A
T = 150°C
A
0.050
0
0.100
0.150
0.200
0.250
0.300
0.350
0.400
0.450
0.500
I
I
C
B
= 10
1
10
1,000
10,000
100
1
10 1,000
100
h, D
C
C
U
R
R
EN
T
G
AIN
FE
I , COLLECTOR CURRENT (mA)
Fig. 8, Typical DC Current Gain vs.
Collector Current (DRDN005W)
C
T = -50°C
A
T = 25°C
A
T = 150°C
A
V = 5V
CE
0.1
0.2
0.1
110
V , BASE-EMI
100
T
T
E
R
O
N V
O
L
T
A
G
E (V)
BE(ON)
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
V = 5V
CE
I , COLLECTOR CURRENT (mA)
Fig. 9, Typical Base-Emitter On Voltage
vs. Collector Current (DRDN005W)
C
T = -50°C
A
T = 25°C
A
T = 150°C
A
1
10
1,000
100
1
10
f,
G
AI
N
BA
N
DWID
T
H
P
R
O
D
U
C
T
(M
H
z)
T
I , COLLECTOR CURRENT (mA)
Fig. 10, Typical Gain Bandwidth Product vs.
Collector Current (DRDN005W)
C
0
0.1
0.2
0.3
0.6
0.5
0.4
110
100
1,000
I , COLLECTOR CURRENT (mA)
Fig.11, Typical Collector-Emitter Saturation Voltage vs.
Collector Current (DRDP006W)
C
V, C
O
LLECT
O
R
-EMITTE
R
SATURATION VOLTAGE (V)
CE(SAT)
I
I
C
B
= 10
T = 150°C
A
T = 25°C
A
T = -50°C
A
I , BASE CURRENT (mA)
Fig. 12, Typical Collector Saturation Region (DRDP006W)
B
V,
C
O
LLE
C
T
O
R
-EMI
T
T
E
R
V
O
L
T
A
G
E (V)
CE
0.001
0.01
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0.1 1
10 100
I = 1mA
C
I = 10mA
C
I = 30mA
C
I = 100mA
C
I = 300mA
C
DS30573 Rev. 10 - 2
6 of 9
www.
diodes.com
DRD (xxxx) W
© Diodes Incorporated
P1-P3P4-P6P7-P9

DRDPB16W-7

Mfr. #:
Buy DRDPB16W-7
Manufacturer:
Diodes Incorporated
Description:
Bipolar Transistors - Pre-Biased PNP Trans R1-R2 Switch-Relay Drvr
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet