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MT8HTF6464HY-40EB3

P1-P3P4-P6P7-P9P10-P12P13-P14
Products and specifications discussed herein are subject to change by Micron without notice.
256MB, 512MB, 1GB: (x64, SR) 200-Pin DDR2 SDRAM SODIMM
Features
PDF: 09005aef80eec96e/Source: 09005aef80eec946 Micron Technology, Inc., reserves the right to change products or specifications without notice.
HTF8C32_64_128x64HG.fm - Rev. E 6/08 EN
1 ©2004 Micron Technology, Inc. All rights reserved.
DDR2 SDRAM SODIMM
MT8HTF3264H(I) – 256MB
MT8HTF6464H(I) – 512MB
MT8HTF12864H(I) – 1GB
For component data sheets, refer to Micron’s Web site: www.micron.com/products/dram/ddr2
Features
• 200-pin, small outline, dual in-line memory module
(SODIMM)
• Fast data transfer rates: PC2-3200, PC2-4200,
PC2-5300, or PC2-6400
• 256MB (32 Meg x 64), 512MB (64 Meg x 64),
1GB (128 Meg x 64)
•V
DD = VDDQ = +1.8V
•V
DDSPD = +1.7V to +3.6V
• JEDEC standard 1.8V I/O (SSTL_18-compatible)
• Differential data strobe (DQS, DQS#) option
• Four-bit prefetch architecture
• DLL to align DQ and DQS transitions with CK
• Multiple internal device banks for concurrent
operation
• Programmable CAS# latency (CL)
• Posted CAS# additive latency (AL)
• WRITE latency = READ latency - 1
t
CK
• Programmable burst lengths: 4 or 8
• Adjustable data-output drive strength
• 64ms, 8,192-cycle refresh
• On-die termination (ODT)
• Serial presence detect (SPD) with EEPROM
• Gold edge contacts
• Single rank
Figure 1: 200-pin SODIMM (MO-224 R/C “B”)
Notes: 1. Industrial temperatures apply to DRAM only.
2. Contact Micron for product availability.
3. CL = CAS (READ) latency
4. Not available in 256MB density
Options Marking
• Operating temperature
•Commercial (0°C ≤ T
C
≤ +85°C)
• Industrial (–40°C ≤ T
C
≤ +95°C)
1,2
I
•Package
– 200-pin SODIMM (Pb-free) Y
• Frequency/CAS latency
3
– 2.5ns @ CL = 5 (DDR2-800)
4
-80E
– 2.5ns @ CL = 6 (DDR2-800)
4
-800
– 3ns @ CL = 5 (DDR2-667) -667
– 3.75ns @ CL = 4 (DDR2-533) -53E
– 5.0ns @ CL = 3 (DDR2-400) -40E
•PCB Height
– 30mm (1.18in)
Height 30mm (1.18in)
Table 1: Key Timing Parameters
Speed
Grade
Industry
Nomenclature
Data Rate (MT/s)
t
RCD
(ns)
t
RP
(ns)
t
RC
(ns)CL = 6 CL = 5 CL = 4 CL = 3
-80E PC2-6400 – 800 533 – 12.5 12.5 55
-800 PC2-6400 800 667 533 – 15 15 55
-667 PC2-5300 – 667 533 400 15 15 55
-53E PC2-4200 – – 533 400 15 15 55
-40E PC2-3200 – – 400 400 15 15 55
PDF: 09005aef80eec96e/Source: 09005aef80eec946 Micron Technology, Inc., reserves the right to change products or specifications without notice.
HTF8C32_64_128x64HG.fm - Rev. E 6/08 EN
2 ©2004 Micron Technology, Inc. All rights reserved.
256MB, 512MB, 1GB: (x64, SR) 200-Pin DDR2 SDRAM SODIMM
Features
Notes: 1. All part numbers end with a two-place code (not shown), designating component and PCB
revisions. Consult factory for current revision codes. Example: MT8HTF6464HY-667A3.
2. For the latest componentdata sheets, see Micron’s Web site:
www.micron.com/products/dram/ddr2
Table 2: Addressing
256MB 512MB 1GB
Refresh count
8K 8K 8K
Row address
8K A[12:0] 16K A[13:0] 16K A[13:0]
Device bank address
4 BA[1:0] 4 BA[1:0] 8 BA[2:0]
Device page size per bank
1KB 1KB 1KB
Device configuration
256Mb (32 Meg x 8) 512Mb (64 Meg x 8) 1Gb (128 Meg x 8)
Column address
1K A[9:0] 1K A[9:0] 1K A[9:0]
Module rank address
1 S0# 1 S0# 1 S0#
Table 3: Part Numbers and Timing Parameters – 256MB Modules
Base device: MT47H32M8, 256Mb DDR2 SDRAM
Part Number
1
Module
Density Configuration
Module
Bandwidth
Memory Clock/
Data Rate
Latency
(CL -
t
RCD -
t
RP)
MT8HTF3264HY-667__
256MB 32 Meg x 64 5.3 GB/s 3.0ns/667 MT/s 5-5-5
MT8HTF3264HY-53E__
256MB 32 Meg x 64 4.3 GB/s 3.75ns/533 MT/s 4-4-4
MT8HTF3264HY-40E__
256MB 32 Meg x 64 3.2 GB/s 5.0ns/400 MT/s 3-3-3
Table 4: Part Numbers and Timing Parameters – 512MB Modules
Base device: MT47H64M8, 512Mb DDR2 SDRAM
Part Number
1
Module
Density Configuration
Module
Bandwidth
Memory Clock/
Data Rate
Latency
(CL -
t
RCD -
t
RP)
MT8HTF6464HY-80E__
512MB 64 Meg x 64 6.4 GB/s 2.5ns/800 MT/s 5-5-5
MT8HTF6464HY-800__
512MB 64 Meg x 64 6.4 GB/s 2.5ns/800 MT/s 6-6-6
MT8HTF6464HY-667__
512MB 64 Meg x 64 5.3 GB/s 3.0ns/667 MT/s 5-5-5
MT8HTF6464HY-53E__
512MB 64 Meg x 64 4.3 GB/s 3.75ns/533 MT/s 4-4-4
MT8HTF6464HY-40E__
512MB 64 Meg x 64 3.2 GB/s 5.0ns/400 MT/s 3-3-3
Table 5: Part Numbers and Timing Parameters – 1GB Modules
Base device: MT47H128M8, 1Gb DDR2 SDRAM
Part Number
1
Module
Density Configuration
Module
Bandwidth
Memory Clock/
Data Rate
Latency
(CL -
t
RCD -
t
RP)
MT8HTF12864HY-80E__
1GB 128 Meg x 64 6.4 GB/s 2.5ns/800 MT/s 5-5-5
MT8HTF12864HY-800__
1GB 128 Meg x 64 6.4 GB/s 2.5ns/800 MT/s 6-6-6
MT8HTF12864HY-667__
1GB 128 Meg x 64 5.3 GB/s 3.0ns/667 MT/s 5-5-5
MT8HTF12864HY-53E__
1GB 128 Meg x 64 4.3 GB/s 3.75ns/533 MT/s 4-4-4
MT8HTF12864HY-40E__
1GB 128 Meg x 64 3.2 GB/s 5.0ns/400 MT/s 3-3-3
PDF: 09005aef80eec96e/Source: 09005aef80eec946 Micron Technology, Inc., reserves the right to change products or specifications without notice.
HTF8C32_64_128x64HG.fm - Rev. E 6/08 EN
3 ©2004 Micron Technology, Inc. All rights reserved.
256MB, 512MB, 1GB: (x64, SR) 200-Pin DDR2 SDRAM SODIMM
Module Pin Assignments and Descriptions
Module Pin Assignments and Descriptions
Notes: 1. Pin 85 is NC for 256MB and 512MB, BA2 for 1GB.
2. Pin 116 is NC for 256MB, A13 for 512MB and 1GB.
Table 6: Pin Assignments
200-Pin SODIMM Front 200-Pin SODIMM Back
Pin Symbol Pin Symbol Pin Symbol Pin Symbol Pin Symbol Pin Symbol Pin Symbol Pin Symbol
1V
REF 51 DQS2 101 A1 151 DQ42 2 VSS 52 DM2 102 A0 152 DQ46
3V
SS 53 VSS 103 VDD 153 DQ43 4 DQ4 54 VSS 104 VDD 154 DQ47
5 DQ0 55 DQ18 105 A10/AP 155 V
SS 6 DQ5 56 DQ22 106 BA1 156 VSS
7 DQ1 57 DQ19 107 BA0 157 DQ48 8 VSS 58 DQ23 108 RAS# 158 DQ52
9V
SS 59 VSS 109 WE# 159 DQ49 10 DM0 60 VSS 110 S0# 160 DQ53
11 DQS0# 61 DQ24 111 V
DD 161 VSS 12 VSS 62 DQ28 112 VDD 162 VSS
13 DQS0 63 DQ25 113 CAS# 163 NC 14 DQ6 64 DQ29 114 ODT0 164 CK1
15 V
SS 65 VSS 115 NC# 165 VSS 16 DQ7 66 VSS 116 NC/A13 166 CK1#
17 DQ2 67 DM3 117 V
DD 167 DQS6# 18 VSS 68 DQS3# 118 VDD 168 VSS
19 DQ3 69 NC 119 NC 169 DQS6 20 DQ12 70 DQS3 120 NC 170 DM6
21 V
SS 71 VSS 121 VSS 171 VSS 22 DQ13 72 VSS 122 VSS 172 VSS
23 DQ8 73 DQ26 123 DQ32 173 DQ50 24 VSS 74 DQ30 124 DQ36 174 DQ54
25 DQ9 75 DQ27 125 DQ33 175 DQ51 26 DM1 76 DQ31 126 DQ37 176 DQ55
27 V
SS 77 VSS 127 VSS 177 VSS 28 VSS 78 VSS 128 VSS 178 VSS
29 DQS1# 79 CKE0 129 DQS4# 179 DQ56 30 CK0 80 NC 130 DM4 180 DQ60
31 DQS1 81 VDD 131 DQS4 181 DQ57 32 CK0# 82 VDD 132 VSS 182 DQ61
33 Vss 83 NC 133 V
SS 183 VSS 34 VSS 84 NC 134 DQ38 184 VSS
35 DQ10 85 NC/BA2 135 DQ34 185 DM7 36 DQ14 86 NC 136 DQ39 186 DQS7#
37 DQ11 87 VDD 137 DQ35 187 VSS 38 DQ15 88 VDD 138 VSS 188 DQS7
39 V
SS 89 A12 139 VSS 189 DQ58 40 VSS 90 A11 140 DQ44 190 VSS
41 VSS 91 A9 141 DQ40 191 DQ59 42 VSS 92 A7 142 DQ45 192 DQ62
43 DQ16 93 A8 143 DQ41 193 VSS 44 DQ20 94 A6 144 VSS 194 DQ63
45 DQ17 95 V
DD 145 VSS 195 SDA 46 DQ21 96 VDD 146 DQS5# 196 VSS
47 VSS 97 A5 147 DM5 197 SCL 48 VSS 98 A4 148 DQS5 198 SA0
49 DQS2# 99 A3 149 V
SS 199 VDDSPD 50 NC 100 A2 150 VSS 200 SA1
P1-P3P4-P6P7-P9P10-P12P13-P14

MT8HTF6464HY-40EB3

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Manufacturer:
Micron
Description:
MOD DDR2 SDRAM 512MB 200SODIMM
Lifecycle:
New from this manufacturer.
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