MT8HTF6464HY-53EB3

PDF: 09005aef80eec96e/Source: 09005aef80eec946 Micron Technology, Inc., reserves the right to change products or specifications without notice.
HTF8C32_64_128x64HG.fm - Rev. E 6/08 EN
13 ©2004 Micron Technology, Inc. All rights reserved.
256MB, 512MB, 1GB: (x64, SR) 200-Pin DDR2 SDRAM SODIMM
Serial Presence-Detect
Serial Presence-Detect
Notes: 1. To avoid spurious start and stop conditions, a minimum delay is placed between SCL = 1 and
the falling or rising edge of SDA.
2. This parameter is sampled.
3. For a restart condition or following a WRITE cycle.
4. The SPD EEPROM WRITE cycle time (
t
WRC) is the time from a valid stop condition of a write
sequence to the end of the EEPROM internal ERASE/PROGRAM cycle. During the WRITE
cycle, the EEPROM bus interface circuit is disabled, SDA remains HIGH due to pull-up resis-
tance, and the EEPROM does not respond to its slave address.
Serial Presence-Detect Data
For the latest serial presence-detect data, refer to Micron's SPD page:
www.micron.com/SPD.
Table 14: Serial Presence-Detect EEPROM DC Operating Conditions
Parameter/Condition Symbol Min Max Units
Supply voltage
V
DDSPD 1.7 3.6 V
Input high voltage: Logic 1; All inputs
V
IH VDDSPD × 0.7 VDDSPD + 0.5 V
Input low voltage: Logic 0; All inputs
V
IL –0.6 VDDSPD × 0.3 V
Output low voltage: I
OUT = 3mA
VOL –0.4V
Input leakage current: V
IN = GND to VDD
ILI 0.1 3.0 µA
Output leakage current: V
OUT = GND to VDD
ILO 0.05 3.0 µA
Standby current
I
SB 1.6 4.0 µA
Power supply current, READ: SCL clock frequency = 100 kHz
I
CC
R
0.4 1.0 mA
Power supply current, WRITE: SCL clock frequency = 100 kHz
I
CC
W
2.0 3.0 mA
Table 15: Serial Presence-Detect EEPROM AC Operating Conditions
Parameter/Condition Symbol Min Max Units Notes
SCL LOW to SDA data-out valid
t
AA 0.2 0.9 µs 1
Time the bus must be free before a new transition can start
t
BUF 1.3 µs
Data-out hold time
t
DH 200 ns
SDA fall time
t
F 300 ns 2
SDA rise time
t
R 300 ns 2
Data-in hold time
t
HD:DAT 0 µs
Start condition hold time
t
H:STA 0.6 µs
Clock HIGH period
t
HIGH 0.6 µs
Noise suppression time constant at SCL, SDA inputs
t
I–50ns
Clock LOW period
t
LOW 1.3 µs
SCL clock frequency
f
SCL 400 kHz
Data-in setup time
t
SU:DAT 100 ns
Start condition setup time
t
SU:STA 0.6 µs 3
Stop condition setup time
t
SU:STO 0.6 µs
WRITE cycle time
t
WRC 10 ms 4
®
8000 S. Federal Way, P.O. Box 6, Boise, ID 83707-0006, Tel: 208-368-3900
prodmktg@micron.com www.micron.com Customer Comment Line: 800-932-4992
Micron, the M logo, and the Micron logo are trademarks of Micron Technology, Inc. All other trademarks are the property of their respec-
tive owners.
This data sheet contains minimum and maximum limits specified over the complete power supply and temperature range for production
devices. Although considered final, these specifications are subject to change, as further product development and data characterization
sometimes occur.
256MB, 512MB, 1GB: (x64, SR) 200-Pin DDR2 SDRAM SODIMM
Module Dimensions
PDF: 09005aef80eec96e/Source: 09005aef80eec946 Micron Technology, Inc., reserves the right to change products or specifications without notice.
HTF8C32_64_128x64HG.fm - Rev. E 6/08 EN
14 ©2004 Micron Technology, Inc. All rights reserved.
Module Dimensions
Figure 3: 200-pin DDR2 SODIMM Module Dimensions
Notes: 1. All dimensions are in millimeters (inches); MAX/MIN or typical (TYP) where noted.
2. The dimensional diagram is for reference only. Refer to the MO document for complete
design dimensions.
U1
U2 U3 U4
U5
U6 U7 U8 U9
3.8 (0.15)
MAX
PIN 1
67.75 (2.667)
67.45 (2.656)
20.0 (0.787)
TYP
1.8 (0.071) D
(2X)
0.6 (0.024) TYP0.45 (0.018) TYP
2.0 (0.079) R
(2X)
PIN 199
PIN 200
PIN 2
FRONT VIEW
2.0 (0.079)
TYP
6.0 (0.236)
TYP
63.6 (2.504)
TYP
1.0 (0.039) TYP
29.85 (1.175)
30.15 (1.187)
BACK VIEW
1.1 (0.043)
0.9 (0.035)
47.4 (1.87)
TYP
11.4 (0.45)
TYP
4.2 (0.165)
TYP
4.0 (0.157) TYP
16.26 (0.64)
TYP

MT8HTF6464HY-53EB3

Mfr. #:
Manufacturer:
Micron
Description:
MOD DDR2 SDRAM 512MB 200SODIMM
Lifecycle:
New from this manufacturer.
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