MT8HTF6464HY-53EB3

PDF: 09005aef80eec96e/Source: 09005aef80eec946 Micron Technology, Inc., reserves the right to change products or specifications without notice.
HTF8C32_64_128x64HG.fm - Rev. E 6/08 EN
4 ©2004 Micron Technology, Inc. All rights reserved.
256MB, 512MB, 1GB: (x64, SR) 200-Pin DDR2 SDRAM SODIMM
Module Pin Assignments and Descriptions
Table 7: Pin Descriptions
Symbol Type Description
A[15:0] Input
Address inputs: Provide the row address for ACTIVE commands, and the column address and
auto precharge bit (A10) for READ/WRITE commands, to select one location out of the memory
array in the respective bank. A10 sampled during a PRECHARGE command determines whether
the PRECHARGE applies to one device bank (A10 LOW, device bank selected by BA[2/1:0]) or all
device banks (A10 HIGH). The address inputs also provide the op-code during a LOAD MODE
command. A[12:0] (512MB) and A[13:0] (1GB, 2GB).
A[15:14] are connected for parity.
BA[2:0] Input
Bank address inputs: BA[2/1:0] define the device bank to which an ACTIVE, READ, WRITE, or
PRECHARGE command is being applied. BA[2/1:0] define which mode register (MR, EMR1,
EMR2, and EMR3) is loaded during the LOAD MODE command. BA[1:0] (512MB, 1GB) and
BA[2:0] (2GB).
CK[1:0]
CK#[1:0]
Input
Clock: CK and CK# are differential clock inputs. All control, command, and address input
signals are sampled on the crossing of the positive edge of CK and the negative edge of CK#.
Output data (DQ, DQS, and DQS#) is referenced to the crossings of CK and CK#.
CKE0 Input
Clock enable: CKE enables (registered HIGH) and disables (registered LOW) internal circuitry
and clocks on the DDR2 SDRAM.
DM[8:0] Input
Input data mask: DM is an input mask signal for write data. Input data is masked when DM is
sampled HIGH, along with the input data, during a write access. DM is sampled on both edges
of DQS. Although the DM pins are input-only, DM loading is designed to match that of the DQ
and DQS pins.
ODT0 Input
On-die termination: ODT enables (registered HIGH) and disables (registered LOW)
termination resistance internal to the DDR2 SDRAM. When enabled in normal operation, ODT
is only applied to the following pins: DQ, DQS, DQS#, DM, and CB. The ODT input will be
ignored if disabled via the LOAD MODE command.
RAS#, CAS#,
WE#
Input
Command inputs: RAS#, CAS#, and WE# (along with S#) define the command being entered.
RESET# Input
Reset: Asynchronously forces all registered outputs LOW when RESET# is LOW. This signal can
be used during power-up to ensure that CKE is LOW and DQ are High-Z.
S0# Input
Chip select: S# enables (registered LOW) and disables (registered HIGH) the command
decoder.
SA[1:0] Input
Serial address inputs: These pins are used to configure the SPD EEPROM address range on
the I
2
C bus.
SCL Input
Serial clock for SPD EEPROM: SCL is used to synchronize communication to and from the
SPD EEPROM.
DQ[63:0] I/O
Data input/output: Bidirectional data bus.
DQS[8:0],
DQS#[8:0]
I/O
Data strobe: DQS# is only used when differential data strobe mode is enabled via the LOAD
MODE command. Output with read data. Edge-aligned with read data. Input with write data.
Center-aligned with write data.
SDA I/O
Serial data: SDA is a bidirectional pin used to transfer addresses and data into and out of the
SPD EEPROM on the module on the I
2
C bus.
V
DD Supply
Power supply: 1.8V ±0.1V. The component V
DD are connected to the module VDD.
V
DDSPD Supply
SPD EEPROM power supply: +1.7V to +3.6V.
V
REF Supply
Reference voltage: V
DD/2.
V
SS Supply
Ground.
NC
No connect: These pins are not connected on the module.
PDF: 09005aef80eec96e/Source: 09005aef80eec946 Micron Technology, Inc., reserves the right to change products or specifications without notice.
HTF8C32_64_128x64HG.fm - Rev. E 6/08 EN
5 ©2004 Micron Technology, Inc. All rights reserved.
256MB, 512MB, 1GB: (x64, SR) 200-Pin DDR2 SDRAM SODIMM
Module Pin Assignments and Descriptions
Figure 2: Functional Block Diagram
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
U1
DM CS# DQS DQS#
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ32
DQ33
DQ34
DQ35
DQ36
DQ37
DQ38
DQ39
U7
DM CS# DQS DQS#
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ8
DQ9
DQ10
DQ11
DQ12
DQ13
DQ14
DQ15
U9
DM CS# DQS DQS#
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ16
DQ17
DQ18
DQ19
DQ20
DQ21
DQ22
DQ23
U8
DM CS# DQS DQS#
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ24
DQ25
DQ26
DQ27
DQ28
DQ29
DQ30
DQ31
U2
DM CS# DQS DQS#
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ40
DQ41
DQ42
DQ43
DQ44
DQ45
DQ46
DQ47
U3
DM CS# DQS DQS#
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ48
DQ49
DQ50
DQ51
DQ52
DQ53
DQ54
DQ55
U4
DM CS# DQS DQS#
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ56
DQ57
DQ58
DQ59
DQ60
DQ61
DQ62
DQ63
U6
DM CS# DQS DQS#
DQS0#
DQS0
DM0
S0#
DQS1#
DQS1
DM1
DQS2#
DQS2
DM2
DQS3#
DQS3
DM3
DQS4#
DQS4
DM4
DQS5#
DQS5
DM5
DQS6#
DQS6
DM6
DQS7#
DQS7
DM7
U1, U2,
U8, U9
CK0
CK0#
U3, U4,
U6, U7
CK1
CK1#
A0
SPD/EEPROM
A1
A2
SA0
SA1
SDA
SCL
WP
U5
BA[2/1:0]
A[13/12:0]
RAS#
CAS#
WE#
CKE0
ODT0
BA[2/1:0]: DDR2 SDRAM
A[13/12:0]: DDR2 SDRAM
RAS#: DDR2 SDRAM
CAS#: DDR2 SDRAM
WE#: DDR2 SDRAM
CKE0: DDR2 SDRAM
ODT0: DDR2 SDRAM
V
DDSPD
V
DD
VREF
VSS
SPD/EEPROM
DDR2 SDRAMs
DDR2 SDRAMs
DDR2 SDRAMs, SPD/EEPROM
VSS
VSS
PDF: 09005aef80eec96e/Source: 09005aef80eec946 Micron Technology, Inc., reserves the right to change products or specifications without notice.
HTF8C32_64_128x64HG.fm - Rev. E 6/08 EN
6 ©2004 Micron Technology, Inc. All rights reserved.
256MB, 512MB, 1GB: (x64, SR) 200-Pin DDR2 SDRAM SODIMM
General Description
General Description
The MT8HTF3264H, MT8HTF6464H, and MT8HTF12864H DDR2 SDRAM modules are
high-speed, CMOS, dynamic random-access 256MB, 512MB, and 1GB memory modules
organized in x64 configuration. DDR2 SDRAM modules use internally configured quad-
bank (256Mb, 512Mb) or eight-bank (1Gb) DDR2 SDRAM devices.
DDR2 SDRAM modules use double data rate architecture to achieve high-speed opera-
tion. The double data rate architecture is essentially a 4n-prefetch architecture with an
interface designed to transfer two data words per clock cycle at the I/O pins. A single
read or write access for the DDR2 SDRAM module effectively consists of a single 4n-bit-
wide, one-clock-cycle data transfer at the internal DRAM core and four corresponding
n-bit-wide, one-half-clock-cycle data transfers at the I/O pins.
A bidirectional data strobe (DQS, DQS#) is transmitted externally, along with data, for
use in data capture at the receiver. DQS is a strobe transmitted by the DDR2 SDRAM
device during reads and by the memory controller during writes. DQS is edge-aligned
with data for reads and center-aligned with data for writes.
DDR2 SDRAM modules operate from a differential clock (CK and CK#); the crossing of
CK going HIGH and CK# going LOW will be referred to as the positive edge of CK.
Commands (address and control signals) are registered at every positive edge of CK.
Input data is registered on both edges of DQS, and output data is referenced to both
edges of DQS, as well as to both edges of CK.
Serial Presence-Detect Operation
DDR2 SDRAM modules incorporate serial presence-detect. The SPD data is stored in a
256-byte EEPROM. The first 128 bytes are programmed by Micron to identify the module
type and various SDRAM organizations and timing parameters. The remaining 128 bytes
of storage are available for use by the customer. System READ/WRITE operations
between the master (system logic) and the slave EEPROM device occur via a standard
I
2
C bus using the DIMM’s SCL (clock) and SDA (data) signals, together with SA[1:0],
which provide fourt unique DIMM/EEPROM addresses. Write protect (WP) is connected
to V
SS, permanently disabling hardware write protect.

MT8HTF6464HY-53EB3

Mfr. #:
Manufacturer:
Micron
Description:
MOD DDR2 SDRAM 512MB 200SODIMM
Lifecycle:
New from this manufacturer.
Delivery:
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