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NTGS4111PT1

P1-P3P4-P6
© Semiconductor Components Industries, LLC, 2014
August, 2014 − Rev. 4
1 Publication Order Number:
NTGS4111P/D
NTGS4111P, NVGS4111P
Power MOSFET
−30 V, −4.7 A, Single P−Channel, TSOP−6
Features
• Leading −30 V Trench Process for Low R
DS(on)
• Low Profile Package Suitable for Portable Applications
• Surface Mount TSOP−6 Package Saves Board Space
• Improved Efficiency for Battery Applications
• NV Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
• Pb−Free Package is Available
Applications
• Battery Management and Switching
• Load Switching
• Battery Protection
MAXIMUM RATINGS (T
J
= 25°C unless otherwise noted)
Rating Symbol Value Unit
Drain−to−Source Voltage V
DSS
−30 V
Gate−to−Source Voltage V
GS
±20 V
Continuous Drain Cur-
rent (Note 1)
Steady
State
T
A
= 25°C
I
D
−3.7
A
T
A
= 85°C −2.7
t ≤ 5 s T
A
= 25°C −4.7
Power Dissipation
(Note 1)
Steady
State
T
A
= 25°C P
D
1.25
W
t ≤ 5 s 2.0
Continuous Drain Cur-
rent (Note 2)
Steady
State
T
A
= 25°C
I
D
−2.6
A
T
A
= 85°C −1.9
Power Dissipation
(Note 2)
T
A
= 25°C P
D
0.63 W
Pulsed Drain Current
tp = 10 ms
I
DM
−15 A
Operating Junction and Storage Temperature T
J
,
T
STG
−55 to
150
°C
Source Current (Body Diode) I
S
−1.7 A
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
L
260 °C
THERMAL RESISTANCE RATINGS
Rating Symbol Max Unit
Junction−to−Ambient – Steady State (Note 1)
R
q
JA
100
°C/W
Junction−to−Ambient – t ≤ 5 s (Note 1)
R
q
JA
62.5
Junction−to−Ambient – Steady State (Note 2)
R
q
JA
200
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Surface−mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces).
2. Surface−mounted on FR4 board using the minimum recommended pad size
(Cu area = 0.006 in sq).
3
4
1256
P−Channel
http://onsemi.com
TSOP−6
CASE 318G
STYLE 1
MARKING DIAGRAM &
PIN ASSIGNMENT
1
XX M G
G
XX = Specific Device Code
M = Date Code*
G = Pb−Free Package
Source
4
Drain
6
Drain
5
3
Gate
1
Drain
2
Drain
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
−30 V
68 mW @ −4.5 V
38 mW @ −10 V
R
DS(on)
TYP
−4.7 A
I
D
MAX
V
(BR)DSS
See detailed ordering and shipping information ion page 5 of
this data sheet.
ORDERING INFORMATION
NTGS4111P, NVGS4111P
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise noted)
Characteristic Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= −250 mA
−30 V
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
(BR)DSS
/T
J
−17 mV/°C
Zero Gate Voltage Drain Current I
DSS
V
GS
= 0 V,
V
DS
= −24 V
T
J
= 25°C
−1.0
mA
T
J
= 125°C
−100
Gate−to−Source Leakage Current I
GSS
V
DS
= 0 V, V
GS
= ±20 V ±100 nA
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= −250 mA
−1.0 −3.0 V
Negative Threshold Temperature Coefficient V
GS(TH)
/T
J
5.0 mV/°C
Drain−to−Source On Resistance R
DS(on)
V
GS
= −10 V, I
D
= −3.7 A 38 60
mW
V
GS
= −4.5 V, I
D
= −2.7 A 68 110
Forward Transconductance g
FS
V
DS
= −10 V, I
D
= −3.7 A 6.0 S
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
C
ISS
V
GS
= 0 V, f = 1.0 MHz,
V
DS
= −15 V
750
pF
Output Capacitance C
OSS
140
Reverse Transfer Capacitance C
RSS
105
Total Gate Charge Q
G(TOT)
V
GS
= −10 V, V
DD
= −15 V,
I
D
= −3.7 A
15.25 32
nC
Threshold Gate Charge Q
G(TH)
0.8
Gate−to−Source Charge Q
GS
2.6
Gate−to−Drain Charge Q
GD
3.4
SWITCHING CHARACTERISTICS, VGS = −10 V (Note 4)
Turn−On Delay Time
t
d(ON)
V
GS
= −10 V, V
DD
= −15 V,
I
D
= −1.0 A, R
G
= 6.0 W
9.0 17
ns
Rise Time t
r
9.0 18
Turn−Off Delay Time t
d(OFF)
38 85
Fall Time t
f
22 45
SWITCHING CHARACTERISTICS, VGS = −4.5 V (Note 4)
Turn−On Delay Time
t
d(ON)
V
GS
= −4.5 V, V
DD
= −15 V,
I
D
= −1.0 A, R
G
= 6.0 W
11 20
ns
Rise Time t
r
15 28
Turn−Off Delay Time t
d(OFF)
28 56
Fall Time t
f
22 50
DRAIN − SOURCE DIODE CHARACTERISTICS
Characteristic
Symbol Test Condition Min Typ Max Unit
Forward Diode Voltage V
DS
V
GS
= 0 V,
I
S
= −1.0 A
T
J
= 25°C
−0.76 −1.2
V
T
J
= 125°C
−0.60
Reverse Recovery Time t
RR
V
GS
= 0 V
dI
S
/dt = 100 A/ms, I
S
= −1.0 A
17 40
ns
Charge Time t
a
9.0
Discharge Time t
b
8.0
Reverse Recovery Charge Q
RR
8.0 nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
NTGS4111P, NVGS4111P
http://onsemi.com
3
TYPICAL PERFORMANCE CURVES (T
J
= 25°C unless otherwise noted)
−8 V
100°C
0
12
9
1.20.8
−V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
−I
D,
DRAIN CURRENT (AMPS)
3
0
0.4
Figure 1. On−Region Characteristics
1
10
2.523
8
7
1
1.5
0
4.5
Figure 2. Transfer Characteristics
−V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
15
1000
100
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
−V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
−I
DSS,
LEAKAGE CURRENT (nA)
−I
D,
DRAIN CURRENT (AMPS)
210
0.1
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
−V
GS,
GATE VOLTAGE (VOLTS)
−50 0−25 25
1.0
0.5
50 125100
Figure 5. On−Resistance Variation with
Temperature
T
J
, JUNCTION TEMPERATURE (°C)
T
J
= 25°C
100000
5
T
J
= −55°C
V
GS
= 0 V
75
150
I
D
= −3.7 A
V
GS
= −10 V
R
DS(on),
DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
25°C
R
DS(on),
DRAIN−TO−SOURCE RESISTANCE (W)
1.5
−3 V
25 30
−3.2 V
−3.4 V
−4.5 V
0.2
1.6 2
10000
468
0
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
2.0
0.05
−I
D,
DRAIN CURRENT (AMPS)
0.1
0
R
DS(on),
DRAIN−TO−SOURCE RESISTANCE (W)
V
GS
= −4.5 V
4.0
6
9
10
3.0
T
J
= 25°C
V
GS
= −10 V
T
J
= 100°C
T
J
= 150°C
3.5 4
2
3
4
5
6
V
DS
≥ −10 V
9357
T
J
= 25°C
I
D
= −3.7 A
20
11
8
2
5
10
7
1
4
3.22.82.4 3.6 4
−3.6 V
−3.8 V
−4 V
−4.2 V
−10V
−6 V
−5 V
−5.5 V
5
11
12
P1-P3P4-P6

NTGS4111PT1

Mfr. #:
Buy NTGS4111PT1
Manufacturer:
ON Semiconductor
Description:
MOSFET P-CH 30V 2.6A 6-TSOP
Lifecycle:
New from this manufacturer.
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