NTGS4111PT1

NTGS4111P, NVGS4111P
http://onsemi.com
4
TYPICAL PERFORMANCE CURVES (T
J
= 25°C unless otherwise noted)
V
DS
= 0 V V
GS
= 0 V
010 10
1400
600
400
200
0
30
GATETOSOURCE OR DRAINTOSOURCE VOLTAGE (VOLTS)
C, CAPACITANCE (pF)
0
8
2
0
Q
g
, TOTAL GATE CHARGE (nC)
V
GS,
GATETOSOURCE VOLTAGE (VOLTS)
T
J
= 25°C
C
oss
C
iss
C
rss
I
D
= 3.7 A
T
J
= 25°C
1000
128
4
6
Q
GS
5
800
12
V
GS
V
DS
15
4
0.9
1
V
SD
, SOURCETODRAIN VOLTAGE (VOLTS)
I
S
, SOURCE CURRENT (AMPS)
T
J
= 25°C
1.00.40.3
10
Figure 7. Capacitance Variation
Figure 8. GatetoSource Voltage vs. Total
Gate Charge
Figure 9. Maximum Rated Forward Biased
Safe Operating Area
Figure 10. Diode Forward Voltage vs. Current
5
1200
216
QT
0.5 0.80.6
0.1
0.7
0.1 1 100
V
DS
, DRAINTOSOURCE VOLTAGE (VOLTS)
0.01
100
I
D
, DRAIN CURRENT (AMPS)
R
DS(on)
LIMIT
THERMAL LIMIT
PACKAGE LIMIT
10
10
V
GS
= 20 V
SINGLE PULSE
T
C
= 25°C
1 ms
100 ms
dc
0.1
1
10 ms
1300
500
300
100
900
700
1100
20 25
C
iss
C
rss
10
0
20
10
V
DS,
DRAINTOSOURCE VOLTAGE (VOLTS)
6101411395371115
Q
GD
V
GS
V
DS
1.1
V
GS
= 0 V
T
J
= 55°C
T
J
= 150°C
T
J
= 100°C
0.0001
1
1E03 1E02 1E01 1E+00 1E+01 1E+02 1E+03
0.1
D = 0.5
R
thja(t)
, EFFECTIVE TRANSIENT THERMAL RESPONSE
Figure 11. FET Thermal Response
0.2
0.1
0.05
0.02
0.01
Single Pulse
t, TIME (s)
0.01
0.001
1E06 1E05 1E041E07
NTGS4111P, NVGS4111P
http://onsemi.com
5
Table 1. ORDERING INFORMATION
Part Number
Marking
(XX)
Package Shipping
NTGS4111PT1 TG SC88 3000 / Tape & Reel
NTGS4111PT1G TG SC88
(PbFree)
3000 / Tape & Reel
NVGS4111PT1G VTG SC88
(PbFree)
3000 / Tape & Reel
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
NTGS4111P, NVGS4111P
http://onsemi.com
6
PACKAGE DIMENSIONS
TSOP6
CASE 318G02
ISSUE V
23
456
D
1
e
b
E1
A1
A
0.05
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM
LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS. MOLD FLASH, PROTRUSIONS, OR
GATE BURRS SHALL NOT EXCEED 0.15 PER SIDE. DIMENSIONS D
AND E1 ARE DETERMINED AT DATUM H.
5. PIN ONE INDICATOR MUST BE LOCATED IN THE INDICATED ZONE.
c
*For additional information on our PbFree strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
DIM
A
MIN NOM MAX
MILLIMETERS
0.90 1.00 1.10
A1 0.01 0.06 0.10
b 0.25 0.38 0.50
c 0.10 0.18 0.26
D 2.90 3.00 3.10
E 2.50 2.75 3.00
e 0.85 0.95 1.05
L 0.20 0.40 0.60
0.25 BSC
L2
0° 10°
1.30 1.50 1.70
E1
E
RECOMMENDED
NOTE 5
L
C
M
H
L2
SEATING
PLANE
GAUGE
PLANE
DETAIL Z
DETAIL Z
0.60
6X
3.20
0.95
6X
0.95
PITCH
DIMENSIONS: MILLIMETERS
M
STYLE 1:
PIN 1. DRAIN
2. DRAIN
3. GATE
4. SOURCE
5. DRAIN
6. DRAIN
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specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets
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PUBLICATION ORDERING INFORMATION
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USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81358171050
NTGS4111P/D
LITERATURE FULFILLMENT:
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P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 3036752175 or 8003443860 Toll Free USA/Canada
Fax: 3036752176 or 8003443867 Toll Free USA/Canada
Email: orderlit@onsemi.com
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Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative

NTGS4111PT1

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
MOSFET P-CH 30V 2.6A 6-TSOP
Lifecycle:
New from this manufacturer.
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