FDPF79N15 Datasheet FDP79N15, FDPF79N15 | P1-P3

FDP79N15 / FDPF79N15 Rev. B

FDP79N15 / FDPF79N15 150V N-Channel MOSFET

April 2007

UniFET

TM

FDP79N15 / FDPF79N15

150V N-Channel MOSFET

Features

• 79A, 150V, R

DS(on)

= 0.03Ω @V

GS

= 10 V

• Low gate charge ( typical 56 nC)

• Low Crss ( typical 96pF)

•Fast switching

• Improved dv/dt capability

Description

These N-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary, planar

stripe, DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the avalanche

and commutation mode. These devices are well suited for high

efficient switched mode power supplies and active power factor

correction.

Absolute Maximum Ratings

*Drain current limited by maximum junction temperature

Thermal Characteristics

TO-220

FDP Series

G

S

D

TO-220F

FDPF Series

G

S

D

G

S

Symbol Parameter FDP79N15 FDPF79N15 Unit

V

DSS

Drain-Source Voltage 150 V

I

D

Drain Current - Continuous (T

C

= 25°C)

- Continuous (T

C

= 100°C)

79

50

79*

50*

A

I

DM

Drain Current - Pulsed

(Note 1)

316 316*

A

V

GSS

Gate-Source voltage ± 30 V

E

AS

Single Pulsed Avalanche Energy

(Note 2)

1669 mJ

I

AR

Avalanche Current

(Note 1)

79 A

E

AR

Repetitive Avalanche Energy

(Note 1)

46.3 mJ

dv/dt Peak Diode Recovery dv/dt

(Note 3)

4.5 V/ns

P

D

Power Dissipation (T

C

= 25°C)

- Derate above 25°C

463

3.7

38

0.3

W

W/°C

T

J,

T

STG

Operating and Storage Temperature Range -55 to +150 °C

T

L

Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds

300 °C

Symbol Parameter FDP79N15 FDPF79N15 Unit

R

θJC

Thermal Resistance, Junction-to-Case 0.27 3.3 °C/W

R

θCS

Thermal Resistance, Case-to-Sink Typ. 0.5 -- °C/W

R

θJA

Thermal Resistance, Junction-to-Ambient 62.5 62.5 °C/W

2 www.fairchildsemi.com

FDP79N15 / FDPF79N15 Rev. B

FDP79N15 / FDPF79N15 150V N-Channel MOSFET

Package Marking and Ordering Information

Electrical Characteristics T

C

= 25°C unless otherwise noted

Notes:

1. Repetitive Rating: Pulse width limited by maximum junction temperature

2. L = 0.357mH, I

AS

= 79A, V

DD

= 50V, R

G

= 25Ω, Starting T

J

= 25°C

3. I

SD

≤ 79A, di/dt ≤ 200A/μs, V

DD

≤ BV

DSS

, Starting T

J

= 25°C

4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2%

5. Essentially Independent of Operating Temperature Typical Characteristics

Device Marking Device Package Reel Size Tape Width Quantity

FDP79N15 FDP79N15 TO-220 - - 50

FDPF79N15 FDPF79N15 TO-220F - - 50

Symbol Parameter Conditions Min Typ Max Units

Off Characteristics

BV

DSS

Drain-Source Breakdown Voltage V

GS

= 0V, I

D

= 250μA, T

J

= 25°C 150 -- -- V

ΔBV

DSS

/ ΔT

J

Breakdown Voltage Temperature

Coefficient

I

D

= 250μA, Referenced to 25°C -- 0.15 -- V/°C

I

DSS

Zero Gate Voltage Drain Current V

DS

= 150V, V

GS

= 0V

V

DS

= 120V, T

C

= 125°C

--

1

10

μA

I

GSSF

Gate-Body Leakage Current, Forward V

GS

= 30V, V

DS

= 0V -- -- 100 nA

I

GSSR

Gate-Body Leakage Current, Reverse V

GS

= -30V, V

DS

= 0V -- -- -100 nA

On Characteristics

V

GS(th)

Gate Threshold Voltage V

DS

= V

GS

, I

D

= 250μA 3.0 -- 5.0 V

R

DS(on)

Static Drain-Source

On-Resistance

V

GS

= 10V, I

D

= 39.5A -- 0.025 0.03 Ω

g

FS

Forward Transconductance V

DS

= 40V, I

D

= 39.5A

(Note 4)

-- 46 -- S

Dynamic Characteristics

C

iss

Input Capacitance V

DS

= 25V, V

GS

= 0V,

f = 1.0MHz

-- 2620 3410 pF

C

oss

Output Capacitance -- 730 950 pF

C

rss

Reverse Transfer Capacitance -- 96 140 pF

Switching Characteristics

t

d(on)

Turn-On Delay Time V

DD

= 75V, I

D

= 79A

R

G

= 25Ω

(Note 4, 5)

-- 50 112 ns

t

r

Turn-On Rise Time -- 200 410 ns

t

d(off)

Turn-Off Delay Time -- 55 120 ns

t

f

Turn-Off Fall Time -- 38 85 ns

Q

g

Total Gate Charge V

DS

= 120V, I

D

= 79A

V

GS

= 10V

(Note 4, 5)

-- 56 73 nC

Q

gs

Gate-Source Charge -- 18 -- nC

Q

gd

Gate-Drain Charge -- 21 -- nC

Drain-Source Diode Characteristics and Maximum Ratings

I

S

Maximum Continuous Drain-Source Diode Forward Current -- -- 79 A

I

SM

Maximum Pulsed Drain-Source Diode Forward Current -- -- 316 A

V

SD

Drain-Source Diode Forward Voltage V

GS

= 0V, I

S

= 79A -- -- 1.4 V

t

rr

Reverse Recovery Time V

GS

= 0V, I

S

= 79A

dI

F

/dt =100A/μs (Note 4)

-- 136 -- ns

Q

rr

Reverse Recovery Charge -- 2.1 -- μC

3 www.fairchildsemi.com

FDP79N15 / FDPF79N15 Rev. B

FDP79N15 / FDPF79N15 150V N-Channel MOSFET

Typical Performance Characteristics

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation vs. Source Current

and Temperatue

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

10

-1

10

0

10

1

10

0

10

1

10

2

V

GS

Top : 15.0 V

10.0 V

8.0 V

7.0 V

6.5 V

6.0 V

Bottom : 5.5 V

* Notes :

1. 250

μs Pulse Test

2. T

C

= 25

o

C

I

D

, Drain Current [A]

V

DS

, Drain-Source Voltage [V]

24681012

10

0

10

1

10

2

150

o

C

25

o

C

-55

o

C

* Notes :

1. V

DS

= 40V

2. 250

μs Pulse Test

I

D

, Drain Current [A]

V

GS

, Gate-Source Voltage [V]

0 25 50 75 100 125 150 175 200

0.02

0.03

0.04

0.05

0.06

0.07

V

GS

= 20V

V

GS

= 10V

* Note : T

J

= 25

o

C

R

DS(ON)

[Ω],Drain-Source On-Resistance

I

D

, Drain Current [A]

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8

10

0

10

1

10

2

150

o

C

* Notes :

1. V

GS

= 0V

2. 250

μs Pulse Test

25

o

C

I

DR

, Reverse Drain Current [A]

V

SD

, Source-Drain voltage [V]

10

-1

10

0

10

1

0

1000

2000

3000

4000

5000

6000

C

iss

= C

gs

+ C

gd

(C

ds

= shorted)

C

oss

= C

ds

+ C

gd

C

rss

= C

gd

* Note ;

1. V

GS

= 0 V

2. f = 1 MHz

C

rss

C

oss

C

iss

Capacitances [pF]

V

DS

, Drain-Source Voltage [V]

0 102030405060

0

2

4

6

8

10

12

V

DS

= 75V

V

DS

= 30V

V

DS

= 120V

* Note : I

D

= 79A

V

GS

, Gate-Source Voltage [V]

Q

G

, Total Gate Charge [nC]

FDPF79N15

FDPF79N15

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