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FDPF79N15
P1-P3
P4-P6
P7-P9
P10-P10
4
www.fairchildsemi.com
FDP79N15 / FDPF79N15 Rev
. B
FDP79N15 / FDPF79N15 150V N-Channel MOSFET
T
ypical Performance Characteristics
(Continued)
Figure 7. Breakdown Volt
age Variatio
n
Figure 8. On-Resistance Variation
vs. Temperature
vs. Temperature
Figure 9-1. Maximum Safe Operating Ar
ea
Figure 9-2. Maximum Safe Operat
ing Area
for FDP79N15
for FDPF79N15
Figure 10. Maximum Drain Current
vs. Case Temperature
-100
-50
0
50
100
150
200
0.8
0.9
1.0
1.1
1.2
* Note
s :
1. V
GS
= 0 V
2. I
D
= 250
μ
A
BV
DSS
, (Normalized)
Drai
n-Sour
ce Br
eakdow
n Volt
age
T
J
, Junct
i
on Temperatu
re [
o
C]
-100
-50
0
50
100
150
200
0.0
0.5
1.0
1.5
2.0
2.5
3.0
* Notes :
1. V
GS
= 10 V
2. I
D
= 34.5 A
R
DS(ON)
, (Normalized)
Drain-Source On-Resist
ance
T
J
, Junction Temperature [
o
C]
10
0
10
1
10
2
10
-2
10
-1
10
0
10
1
10
2
100 ms
1 ms
10
μ
s
DC
10 ms
100
μ
s
Operati
on in Thi
s Ar
ea
is Li
mit
ed by R
DS(on)
* Notes
:
1. T
C
= 25
o
C
2. T
J
= 150
o
C
3. Si
ngle Pul
se
I
D
, Drain Current [A]
V
DS
, Dra
in-
Source Vol
t
age [
V]
10
0
10
1
10
2
10
-2
10
-1
10
0
10
1
10
2
100 ms
1 ms
10
μ
s
DC
10 ms
100
μ
s
Operati
on i
n This Ar
ea
is
Limit
ed by R
DS(on
)
* Notes :
1. T
C
= 25
o
C
2. T
J
= 150
o
C
3. Singl
e Puls
e
I
D
, Drain Current [A
]
V
DS
, Drai
n-Source Vol
tage [
V]
25
50
75
10
0
125
150
0
10
20
30
40
50
60
70
80
90
I
D
, Drain Curr
ent [A]
T
C
, Case T
emper
atur
e [
o
C]
5
www.fairchildsemi.com
FDP79N15 / FDPF79N15 Rev
. B
FDP79N15 / FDPF79N15 150V N-Channel MOSFET
T
ypical Performance Characteristics
(Continued)
Figure 11-1. Tr
ansient Thermal Respo
nse Curve for FDP79N15
Figure 11-2. Transien
t Thermal Response Curve for FDPF79N15
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
-2
10
-1
* Notes :
1. Z
θ
JC
(t) = 0.27
0
C/W
Max.
2. Duty Factor, D=t
1
/t
2
3. T
JM
- T
C
= P
DM
* Z
θ
JC
(t)
singl
e pulse
D=0.5
0.02
0.2
0.05
0.1
0.01
Z
θ
JC
(t), Thermal Response
t
1
, Squ
are Wave
Pulse
Dura
tion [s
ec]
t
1
P
DM
t
2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
-2
10
-1
10
0
* Notes :
1. Z
θ
JC
(t) = 3.
3
0
C/W
Max.
2. Duty Factor, D=t
1
/t
2
3. T
JM
- T
C
= P
DM
* Z
θ
JC
(t)
singl
e puls
e
D=0.5
0.02
0.2
0.05
0.1
0.01
Z
θ
JC
(t), Thermal Response
t
1
, Square Wave Pulse D
uration [sec]
t
1
P
DM
t
2
6
www.fairchildsemi.com
FDP79N15 / FDPF79N15 Rev
. B
FDP79N15 / FDPF79N15 150V N-Channel MOSFET
Gate Charge T
est Circuit & W
aveform
Resistive Switching T
est Circuit & W
aveforms
Unclamped Inductive Switching T
est Circuit & Waveforms
P1-P3
P4-P6
P7-P9
P10-P10
FDPF79N15
Mfr. #:
Buy FDPF79N15
Manufacturer:
ON Semiconductor / Fairchild
Description:
MOSFET 150V N-Channel
Lifecycle:
New from this manufacturer.
Delivery:
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