Data Sheet D14095EJ5V0DS
3
NP48N055ELE, NP48N055KLE, NP48N055CLE, NP48N055DLE, NP48N055MLE, NP48N055NL
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Zero Gate Voltage Drain Current IDSS VDS = 55 V, VGS = 0 V 10
μ
A
Gate Leakage Current IGSS VGS = ±20 V, VDS = 0 V ±10
μ
A
Gate to Source Threshold Voltage VGS(th) VDS = VGS, ID = 250
μ
A 1.5 2.0 2.5 V
Forward Transfer Admittance | yfs | VDS = 10 V, ID = 24 A 13 25 S
Drain to Source On-state Resistance RDS(on)1 VGS = 10 V, ID = 24 A 13 17 mΩ
RDS(on)2 VGS = 5 V, ID = 24 A 16 21 mΩ
RDS(on)3 VGS = 4.5 V, ID = 24 A 18 24 mΩ
Input Capacitance Ciss 1970 3000 pF
Output Capacitance Coss 250 380 pF
Reverse Transfer Capacitance Crss
V
DS = 25 V,
V
GS = 0 V,
f = 1 MHz
130 240 pF
Turn-on Delay Time td(on) 17 38 ns
Rise Time tr 11 27 ns
Turn-off Delay Time td(off) 54 110 ns
Fall Time tf
VDD = 28 V, ID = 24 A,
V
GS = 10 V,
R
G = 1 Ω
9.3 23 ns
QG1 VDD = 44 V, VGS = 10 V, ID = 48 A 40 60 nC Total Gate Charge
Q
G2 21 32 nC
Gate to Source Charge QGS 7 nC
Gate to Drain Charge QGD
V
DD = 44 V,
V
GS = 5 V,
I
D = 48 A
10 nC
Body Diode Forward Voltage VF(S-D) IF = 48 A, VGS = 0 V 1.0 V
Reverse Recovery Time trr 40 ns
Reverse Recovery Charge Qrr
I
F = 48 A, VGS = 0 V,
di/dt = 100 A/
μ
s
55 nC
TEST CIRCUIT 3 GATE CHARGE
V
GS
= 20 → 0 V
PG.
R
G
= 25 Ω
50 Ω
D.U.T.
L
V
DD
TEST CIRCUIT 1 AVALANCHE CAPABILITY
PG.
D.U.T.
R
L
V
DD
TEST CIRCUIT 2 SWITCHING TIME
R
G
PG.
I
G
= 2 mA
50 Ω
D.U.T.
R
L
V
DD
I
D
V
DD
I
AS
V
DS
BV
DSS
Starting T
ch
V
GS
0
τ = 1 s
Duty Cycle ≤ 1%
τ
V
GS
Wave Form
V
DS
Wave Form
V
GS
V
DS
10%
0
0
90%
90%
90%
V
GS
V
DS
t
on
t
off
t
d(on)
t
r
t
d(off)
t
f
10% 10%
μ
