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NP48N055KLE-E1-AY

P1-P3P4-P6P7-P9P10-P12
Data Sheet D14095EJ5V0DS
5
NP48N055ELE, NP48N055KLE, NP48N055CLE, NP48N055DLE, NP48N055MLE, NP48N055NL
E
Figure6. FORWARD TRANSFER CHARACTERISTICS
V
GS
- Gate to Source Voltage - V
I
D
- Drain Current - A
10
1
0.1
100
1000
Pulsed
12
34
65
T
A
= −40°C
25°C
75°C
150°C
175°C
Figure7. DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
V
DS
- Drain to Source Voltage - V
I
D
- Drain Current - A
4.0
140
120
100
80
60
40
20
0
2.0
Pulsed
0
3.0
1.0
5 V
V
GS
= 10 V
4.5 V
Figure8. FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
I
D
- Drain Current - A
| y
fs
| - Forward Transfer Admittance - S
V
DS
= 10 V
Pulsed
0.01
1
100
10
1
0.1
0.01
10 100
0.1
T
A
= 175°C
75°C
25°C
−40°C
Figure9. DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
V
GS
- Gate to Source Voltage - V
R
DS(on)
- Drain to Source On-state Resistance - mΩ
0
5101520
Pulsed
40
35
30
25
20
15
10
5
0
I
D
= 24 A
Figure10. DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
I
D
- Drain Current - A
R
DS(on)
- Drain to Source On-state Resistance - mΩ
101
40
30
20
10
0
100 1000
Pulsed
V
GS
= 4.5 V
5 V
10 V
Figure11. GATE TO SOURCE THRESHOLD VOLTAGE vs.
CHANNEL TEMPERATURE
T
ch
- Channel Temperature - °C
V
GS(th)
- Gate to Source Threshold Voltage - V
0.5
V
DS
= V
GS
I
D
= 250 μA
1.0
1.5
2.0
2.5
3.0
−50
0 50 100 150
0
Data Sheet D14095EJ5V0DS
6
NP48N055ELE, NP48N055KLE, NP48N055CLE, NP48N055DLE, NP48N055MLE, NP48N055NL
E
Figure12. DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
T
ch
- Channel Temperature - °C
R
DS(on)
- Drain to Source On-state Resistance - mΩ
−50
0 50 100 150
I
D
= 24 A
45
40
35
30
25
20
15
10
5
0
V
GS
= 4.5 V
5 V
10 V
Pulsed
Figure13. SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
1.0
I
F
- Diode Forward Current - A
0 1.5
V
F(S-D)
- Source to Drain Voltage - V
0.5
Pulsed
V
GS
= 10 V
0.1
1
10
100
1000
0 V
Figure14. CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
V
DS
- Drain to Source Voltage - V
C
iss
, C
oss
, C
rss
- Capacitance - pF
0.1 1 10 10
0
V
GS
= 0 V
f = 1 MHz
C
iss
C
oss
C
rss
10000
1000
100
10
Figure15. SWITCHING CHARACTERISTICS
I
D
- Drain Current - A
t
d(on)
, t
r
, t
d(off)
, t
f
- Switching Time - ns
10
1
10.1
100
1000
10 100
t
r
t
d(on)
t
d(off)
t
f
V
DD
= 28 V
V
GS
= 10 V
R
G
= 1 Ω
Figure16. REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
I
F
- Diode Forward Current - A
t
rr
- Reverse Recovery Time - ns
di/dt = 100 A/μs
V
GS
= 0 V
1
0.1
10
1 10 100
1000
100
Figure17. DYNAMIC INPUT/OUTPUT CHARACTERISTICS
V
GS
- Gate to Source Voltage - V
Q
G
- Gate Charge - nC
V
DS
- Drain to Source Voltage - V
10 20 40
80
70
60
50
40
30
20
10
0
030
16
14
12
10
8
6
4
2
0
V
GS
I
D
= 48 A
V
DD
= 44 V
28 V
11 V
V
DS
Data Sheet D14095EJ5V0DS
7
NP48N055ELE, NP48N055KLE, NP48N055CLE, NP48N055DLE, NP48N055MLE, NP48N055NL
E
PACKAGE DRAWINGS (Unit: mm)
1)TO-263 (MP-25ZJ)
Note
2)TO-263 (MP-25ZK)
1.4 ± 0.2
1.0 ± 0.5
2.54 TYP. 2.54 TYP.
8.5 ± 0.2
123
5.7 ± 0.4
4
4.8 MAX.
1.3 ± 0.2
0.5 ± 0.2
1.Gate
2.Drain
3.Source
4.Fin (Drain)
0.7 ± 0.2
10 TYP.
0.5R TYP.
0.8R TYP.
2.8 ± 0.2
10.0 ± 0.3
8.0 TYP.
2.54
0.75 ± 0.2
9.15 ± 0.3
2.54 ± 0.25
15.25 ± 0.5
1.35 ± 0.3
123
4
2.5
4.45 ± 0.2
1.3 ± 0.2
0.5 ± 0.2
0 to 8
ο
1.Gate
2.Drain
3.Source
4.Fin (Drain)
No plating
7.88 MIN.
0.025 to
0.25
0.25
3)TO-220 (MP-25)
Note
4)TO-262 (MP-25 Fin Cut)
Note
4.8 MAX.
1.Gate
2.Drain
3.Source
4.Fin (Drain)
1
2 3
10.6 MAX.
10.0 TYP.
3.6 ± 0.2
4
3.0 ± 0.3
1.3 ± 0.2
0.75 ± 0.1
2.54 TYP.
2.54 TYP.
5.9 MIN.6.0 MAX.
15.5 MAX.12.7 MIN.
1.3 ± 0.2
0.5 ± 0.2
2.8 ± 0.2
φ
4.8 MAX.
1.Gate
2.Drain
3.Source
4.Fin (Drain)
1
2 3
10 TYP.
1.3 ± 0.2
0.75 ± 0.3
2.54 TYP. 2.54 TYP.
8.5 ± 0.2
12.7 MIN.
1.3 ± 0.2
0.5 ± 0.2
2.8 ± 0.2
1.0 ± 0.5
4
Note Not for new design
<R>
P1-P3P4-P6P7-P9P10-P12

NP48N055KLE-E1-AY

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Description:
MOSFET N-CH 55V 48A TO-263
Lifecycle:
New from this manufacturer.
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