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RT8009GB

P1-P3P4-P6P7-P9P10-P12P13-P13
RT8009
4
DS8009-07 March 2011www.richtek.com
Absolute Maximum Ratings (Note 1)
Supply Input Voltage ------------------------------------------------------------------------------------------------------ 6.5V
Enable, FB Voltage ------------------------------------------------------------------------------------------------------- V
IN
+ 0.6V
Power Dissipation, P
D
@ T
A
= 25°C
SOT-23-5, TSOT-23-5 ----------------------------------------------------------------------------------------------------- 0.4W
Package Thermal Resistance (Note 2)
SOT-23-5, TSOT-23-5, θ
JA
----------------------------------------------------------------------------------------------- 250°C/W
SOT-23-5, TSOT-23-5, θ
JC
----------------------------------------------------------------------------------------------- 130°C/W
Junction Temperature Range -------------------------------------------------------------------------------------------- 150°C
Lead Temperature (Soldering, 10 sec.) ------------------------------------------------------------------------------- 260°C
Storage Temperature Range -------------------------------------------------------------------------------------------- −65°C to 150°C
ESD Susceptibility (Note 3)
HBM (Human Body Mode) ---------------------------------------------------------------------------------------------- 2kV
MM (Machine Mode) ------------------------------------------------------------------------------------------------------ 200V
Electrical Characteristics
(V
IN
= 3.6V, V
OUT
= 2.5V, V
REF
= 0.5V, L = 4.7μH, C
IN
= 4.7μF, C
OUT
= 10μF, T
A
= 25°C, I
MAX
= 600mA unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Input Voltage Range
V
IN
2.5 -- 5.5 V
Quiescent Current
I
Q
I
OUT
= 0mA, V
FB
= V
REF
+ 5%
-- 50 100
μA
Shutdown Current
I
SHDN
EN = GND -- 0.1 1 μA
Reference Voltage
V
REF
For adjustable output voltage 0.49 0.5 0.51 V
Adjustable Output Range
V
OUT
V
REF
--
V
IN
− 0.2
V
ΔV
OUT
V
IN
= 2.5 to 5.5V, V
OUT
= 1.0V
0A < I
OUT
< 600mA
−3 -- 3 %
ΔV
OUT
V
IN
= 2.5 to 5.5V, V
OUT
= 1.2V
0A < I
OUT
< 600mA
−3
-- 3 %
ΔV
OUT
V
IN
= 2.5 to 5.5V, V
OUT
= 1.3V
0A < I
OUT
< 600mA
−3
-- 3 %
ΔV
OUT
V
IN
= 2.5 to 5.5V, V
OUT
= 1.5V
0A < I
OUT
< 600mA
−3
-- 3 %
ΔV
OUT
V
IN
= 2.5 to 5.5V, V
OUT
= 1.8V
0A < I
OUT
< 600mA
−3
-- 3 %
ΔV
OUT
V
IN
= V
OUT
+ ΔV
to 5.5V (Note 5)
V
OUT
= 2.5V, 0A < I
OU T
< 600mA
−3
-- 3 %
ΔV
OUT
V
IN
= V
OUT
+ ΔV
to 5.5V (Note 5)
V
OUT
= 3.3V, 0A < I
OU T
< 600mA
−3
-- 3 %
Output Voltage
Accuracy
Fix
ΔV
OUT
V
IN
= V
OUT
+ 0.2V to 5.5V
0A < I
OUT
< 600mA
−3
-- 3 %
To be continued
Recommended Operating Conditions (Note 4)
Supply Input Voltage ------------------------------------------------------------------------------------------------------ 2.5V to 5.5V
Junction Temperature Range -------------------------------------------------------------------------------------------- −40°C to 125°C
Ambient Temperature Range -------------------------------------------------------------------------------------------- −40°C to 85°C
RT8009
5
DS8009-07 March 2011 www.richtek.com
Parameter Symbol Test Conditions Min Typ Max Unit
Output Voltage
Accuracy
Adjustable
ΔV
OU T
V
IN
= V
OUT
+ ΔV
to 5.5V (Note 5)
0A < I
OUT
< 600mA
−3
-- 3 %
FB Input Current
I
FB
V
FB
= V
IN
−50
-- 50 nA
V
IN
= 3.6V
-- 0.3 0.65
R
DS(ON)
of P-Channel MOSFET R
DS(ON)_P
I
OUT
= 200mA
V
IN
= 2.5V
-- 0.4 0.80
Ω
V
IN
= 3.6V
-- 0.25 0.55
R
DS(ON)
of N-Channel MOSFET R
DS(ON)_N
I
OUT
= 200mA
V
IN
= 2.5V
-- 0.35 0.65
Ω
P-Channel Current Limit
I
LIM_P
V
IN
= 2.5V to 5.5 V
1 -- 1.8 A
EN High-Level Input Voltage
V
EN_H
V
IN
= 2.5V to 5.5V
1.5 -- -- V
EN Low-Level Input Voltage
V
EN_L
V
IN
= 2.5V to 5.5V
-- -- 0.4 V
Under Voltage Lockout Threshold -- 1.8 -- V
Hysteresis -- 0.1 -- V
Oscillator Frequency
f
OSC
V
IN
= 3.6V, I
OUT
= 100mA
0.8 1.25 1.85 MHz
Thermal Shutdown Temperature
T
SD
-- 160 -- °C
Min. On Time -- 50 -- ns
Max. Duty Cycle 100 -- -- %
LX Leakage Current
V
IN
= 3.6V, V
LX
= 0V or V
LX
= 3.6V −1
-- 1
μA
Note 1. Stresses listed as the above “Absolute Maximum Ratings” may cause permanent damage to the device. These are for
stress ratings. Functional operation of the device at these or any other conditions beyond those indicated in the
operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended
periods may remain possibility to affect device reliability.
Note 2. θ
JA
is measured in the natural convection at T
A
= 25°C on a low effective thermal conductivity test board of
JEDEC 51-3 thermal measurement standard.
Note 3. Devices are ESD sensitive. Handling precaution recommended.
Note 4. The device is not guaranteed to function outside its operating conditions.
Note 5. ΔV = I
OUT
x R
DS(ON)_P
RT8009
6
DS8009-07 March 2011www.richtek.com
Typical Operating Characteristics
Load Regulation
1.770
1.775
1.780
1.785
1.790
1.795
1.800
1.805
1.810
0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5 0.55 0.6
Load Current (A)
Load Regulation (V
)
V
IN
= 3.3V
V
IN
= 5.5V
V
IN
= 2.5V
V
OUT
= 1.8V
Frequency vs. Input Voltage
1.14
1.16
1.18
1.20
1.22
1.24
1.26
2.5 2.8 3.1 3.4 3.7 4 4.3 4.6 4.9 5.2 5.5
Input Voltage (V)
Frequency (MHz
)
V
OUT
= 1.8V
Efficiency vs. Input Voltage
0
10
20
30
40
50
60
70
80
90
100
2.5 2.8 3.1 3.4 3.7 4 4.3 4.6 4.9 5.2 5.5
Input Voltage (V)
Efficiency (%)
I
OUT
= 600mA
I
OUT
= 300mA
V
OUT
= 1.8V
Current Limit vs. Input Voltage
0.00
0.25
0.50
0.75
1.00
1.25
1.50
1.75
2.00
2.25
2.50
2.5 2.8 3.1 3.4 3.7 4 4.3 4.6 4.9 5.2 5.5
Input Voltage (V)
Current Limit (A)
V
OUT
= 1.8V
Efficiency vs. Load Current
0
10
20
30
40
50
60
70
80
90
100
0.01 0.11 0.21 0.31 0.41 0.51 0.61
Load Current (A)
Efficiency (%)
V
IN
= 3.3V
V
IN
= 5V
V
OUT
= 1.8V
Frequency vs. Temperature
1.10
1.12
1.14
1.16
1.18
1.20
1.22
1.24
1.26
-50 -25 0 25 50 75 100 125
Temperature (°C)
Frequency (MHz) 1
V
IN
= 3.3V, V
OUT
= 1.8V
P1-P3P4-P6P7-P9P10-P12P13-P13

RT8009GB

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IC REG BUCK ADJ 600MA SOT23-5
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