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STP08IE120F4

P1-P3P4-P6P7-P9P10-P11
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Electrical characteristics STP08IE120F4
4/11
2 Electrical characteristics
(T
case
= 25°C unless otherwise specified)
Table 3. Electrical characteristics
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CS(SS)
Collector-source current
(V
BS
= V
GS
= 0)
V
CE
= 1200V
100 µA
I
BS(OS)
Base-source current
(I
C
= 0, V
GS
= 0)
V
BS(OS)
= 30V
10 µA
I
SB(OS)
Source-base current
(I
C
= 0, V
GS
= 0)
V
SB(OS)
= 17V
100 µA
I
GS(OS)
Gate-source leakage
V
GS
= ± 17V
100 nA
V
CS(ON)
Collector-source ON
voltage
V
GS
= 10V _I
C
= 8A I
B
= 1.6A
V
GS
= 10V_ I
C
= 4A I
B
= 0.4A
0.8
0.5
1
1.2
V
V
h
FE
DC current gain
V
GS
= 10V_ I
C
= 8A V
CS
= 1V
V
GS
= 10V_ I
C
= 4A_ V
CS
= 1V
5
7
V
BS(ON)
Base Source ON voltage
V
GS
= 10V_ I
C
= 8A I
B
= 1.6A
V
GS
= 10V_ I
C
= 4A_ I
B
= 0.4A
1.5
1.5
V
V
V
GS(th)
Gate threshold voltage
V
BS
= V
GS
______I
B
= 250µA
23
4V
C
ISS
Input capacitance
V
CS
= 25V
______f = 1MHz
V
GS
= 0
550 pF
Q
GS(tot)
Gate-source charge
V
GS
= 10V
26 nC
t
s
t
f
INDUCTIVE LOAD
Storage time
Fall time
I
C
= 4A I
B
= 0.8A V
GS
= 10V
V
Clamp
= 960V R
G
= 47Ω
t
p
= 4µs
670
15
ns
ns
t
s
t
f
INDUCTIVE LOAD
Storage time
Fall time
I
C
= 4A I
B
= 0.4A V
GS
= 10V
V
Clamp
= 960V R
G
= 47Ω
t
p
= 4µs
340
10.2
ns
ns
V
CSW
Maximum collector-
source voltage switched
without snubber
R
G
= 47Ω h
FE
= 5A I
C
= 8A
1200 V
V
CS(dyn)
Collector-source
dynamic voltage
(500ns)
V
CC
= V
Clamp
= 400V V
GS
= 10V
R
G
= 47Ω I
C
= 4A I
B
= 0.8A
I
Bpeak
= 4A t
peak
= 500ns
5.75 V
V
CS(dyn)
Collector-source
dynamic voltage
(1 µs)
V
CC
= V
Clamp
= 400V V
GS
= 10V
R
G
= 47Ω I
C
= 4A I
B
= 0.8A
I
Bpeak
= 4A t
peak
= 500ns
3.35 V
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STP08IE120F4 Electrical characteristics
5/11
2.1 Electrical characteristics (curves)
Figure 1. Output characteristics Figure 2. DC current gain
Figure 3. Collector-source On voltage Figure 4. Collector-source On voltage
Figure 5. Base-source On voltage Figure 6. Base-source On voltage
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Electrical characteristics STP08IE120F4
6/11
Figure 7. Reverse biased safe operting
area
Figure 8. Gate threshold voltage vs
temperature
Figure 9. Dynamic collector-emitter
saturation voltage
Figure 10. Inductive load switching time
Figure 11. Inductive load switching time
P1-P3P4-P6P7-P9P10-P11

STP08IE120F4

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Manufacturer:
STMicroelectronics
Description:
IGBT Transistors PWR BIP/S.SIGNAL
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New from this manufacturer.
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