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STB100NF03L-03-1

P1-P3P4-P6P7-P9P10-P12P13-P15
June 2006 Rev 2 1/15
15
STP100NF03L-03
STB100NF03L-03 STB100NF03L-03-1
N-channel 30V - 0.0026Ω - 100A - D
2
PAK/I
2
/TO-220
STripFET™ III Power MOSFET
General features
■ Low threshold drive
■ 100% avalanche tested
■ Logic level device
Description
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a
remarkable manufacturing reproducibility.
Applications
■ Switching application
Internal schematic diagram
Type V
DSS
R
DS(on)
I
D
STB100NF03L-03 30V <0.0032Ω 100A
STB100NF03L-03-1 30V <0.0032Ω 100A
STP100NF03L-03 30V <0.0032Ω 100A
D
2
PAK
1
2
3
1
3
1
2
3
I
2
PAK
TO-220
www.st.com
Order codes
Part number Marking Package Packaging
STB100NF03L-03T4 B100NF03L D
2
PAK Tape & reel
STB100NF03L-03-1 B100NF03L I
2
PA K Tu be
STP100NF03L-03 P100NF03L TO-220 Tube
Contents STB100NF03L-03 - STB100NF03L-03-1 - STP100NF03L-03
2/15
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
STB100NF03L-03 - STB100NF03L-03-1 - STP100NF03L-03 Electrical ratings
3/15
1 Electrical ratings
Table 1. Absolute maximum ratings
Symbol Parameter Value Unit
V
DS
Drain-source voltage (V
GS
= 0) 30 V
V
DGR
Drain-gate voltage (R
GS
= 20 kΩ)24 V
V
GS
Gate- source voltage ± 16 V
I
D
(1)
1. Value limited by wire bonding
Drain current (continuous) at
T
C
= 25°C
100 A
I
D
(1)
Drain current (continuous) at
T
C
= 100°C
100 A
I
DM
(2)
2. Pulse width limited by safe operating area.
Drain current (pulsed) 400 A
P
tot
Total dissipation at T
C
= 25°C 300 W
Derating Factor 2 W/°C
E
AS
(3)
3. Starting T
j
= 25 °C, I
D
= 50A, V
DD
= 50V
Single pulse avalanche energy 1.9 J
T
stg
Storage temperature
-55 to 175 °C
T
j
Max. operating junction
temperature
Table 2. Thermal data
Rthj-case Thermal resistance junction-case max 0.5 °C/W
Rthj-amb Thermal resistance junction-ambient max 62.5 °C/W
T
J
Maximum lead temperature for soldering purpose 300 °C
P1-P3P4-P6P7-P9P10-P12P13-P15

STB100NF03L-03-1

Mfr. #:
Buy STB100NF03L-03-1
Manufacturer:
STMicroelectronics
Description:
MOSFET N-Ch 30 Volt 100 Amp
Lifecycle:
New from this manufacturer.
Delivery:
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