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STB100NF03L-03-1

P1-P3P4-P6P7-P9P10-P12P13-P15
Electrical characteristics STB100NF03L-03 - STB100NF03L-03-1 - STP100NF03L-03
4/15
2 Electrical characteristics
(T
CASE
=25°C unless otherwise specified)
Table 3. On/off states
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
breakdown voltage
I
D
= 250µA, V
GS
=0 30 V
I
DSS
Zero gate voltage
drain current (V
GS
= 0)
V
DS
= max ratings
V
DS
= max ratings,
T
C
= 125°C
1
10
µA
µA
I
GSS
Gate-body leakage
current (V
DS
= 0)
V
GS
= ± 16V ±100 nA
V
GS(th)
Gate threshold voltage V
DS
= V
GS
, I
D
= 250µA 1 1.7 2.5 V
R
DS(on)
Static drain-source on
resistance
V
GS
= 10V, I
D
= 50A
V
GS
= 4.5V, I
D
= 50A
0.0026
0.0032
0.0032
0.0045
Ω
Ω
Table 4. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
g
fs
(1)
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
Forward
transconductance
V
DS
>I
D(on)
xR
DS(on)
max
,
I
D
=30A
10 S
C
iss
C
oss
C
rss
Input capacitance
Output capacitance
Reverse transfer
capacitance
V
DS
= 25V, f = 1MHz,
V
GS
= 0
6200
1720
300
pF
pF
pF
t
d(on)
t
r
t
d(off)
t
f
Turn-on delay time
Rise time
Turn-off delay time
Fall time
V
DD
= 15V, I
D
= 50A
R
G
=4.7Ω V
GS
= 4.5V
(see Figure 13)
35
315
115
95
ns
ns
ns
ns
Q
g
Q
gs
Q
gd
Total gate charge
Gate-source charge
Gate-drain charge
V
DD
= 24V, I
D
= 100A,
V
GS
= 5V
(see Figure 14)
88
22.5
36
nC
nC
nC
STB100NF03L-03 - STB100NF03L-03-1 - STP100NF03L-03 Electrical characteristics
5/15
Table 5. Source drain diode
Symbol Parameter Test conditions Min. Typ. Max. Unit
I
SD
I
SDM
(1)
1. Pulse width limited by safe operating area.
Source-drain current
Source-drain current
(pulsed)
100
400
A
A
V
SD
(2)
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Forward on voltage I
SD
= 100A, V
GS
= 0 1.3 V
t
rr
Q
rr
I
RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
SD
= 100A,
di/dt = 100A/µs,
V
DD
= 20V, T
j
= 150°C
(see Figure 15)
75
150
4
ns
nC
A
Electrical characteristics STB100NF03L-03 - STB100NF03L-03-1 - STP100NF03L-03
6/15
2.1 Electrical characteristics (curves)
Figure 1. Safe operating area Figure 2. Thermal impedance
Figure 3. Output characterisics Figure 4. Transfer characteristics
Figure 5. Transconductance Figure 6. Static drain-source on resistance
P1-P3P4-P6P7-P9P10-P12P13-P15

STB100NF03L-03-1

Mfr. #:
Buy STB100NF03L-03-1
Manufacturer:
STMicroelectronics
Description:
MOSFET N-Ch 30 Volt 100 Amp
Lifecycle:
New from this manufacturer.
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