MIO1200-25E10 Datasheet MIO1200-25E10 | P1-P3

1 - 6

20110119a

MIO 1200-25E10

IXYS reserves the right to change limits, test conditions and dimensions.

I

C80

= 1200 A

V

CES

= 2500 V

V

CE(sat) typ.

= 2.5 V

IGBT Module

Single switch

Short Circuit SOA Capability

Square RBSOA

Symbol Conditions Maximum Ratings

V

CES

V

GE

= 0 V 2500 V

V

GES

±

20 V

I

C80

T

C

= 80°C 1200 A

I

CM

t

p

= 1 ms; T

C

= 80°C 2400 A

t

SC

V

CC

= 1800 V; V

CEM CHIP

=

<

2500 V; 10 µs

V

GE

< 15 V; T

VJ

< 125°C

IGBT

CCC

C'

G

E'

E

Features

• NPT³ IGBT

- Low-loss

- Smooth switching waveforms for

good EMC

• Industry standard package

- High power density

- AISiC base-plate for high power

cycling capacity

- AIN substrate for low thermal resistance

Typical Applications

• AC power converters for

- industrial drives

- windmills

- traction

• LASER pulse generator

Symbol Conditions Characteristic Values

(T

VJ

= 25°C, unless otherwise specified)

min. typ. max.

V

CE(sat)

 I

C

= 1200 A; V

GE

= 15 V; T

VJ

= 25°C 2.5 V

T

VJ

= 125°C 3.1 3.4 V

V

GE(th)

I

C

= 240 mA; V

CE

= V

GE

6 7.5 V

I

CES

V

CE

= 2500 V; V

GE

= 0 V; T

VJ

= 125°C 120 mA

I

GES

V

CE

= 0 V; V

GE

=

±

20 V; T

VJ

= 125°C 500 nA

t

d(on)

365 ns

t

r

250 ns

t

d(off)

980 ns

t

f

345 ns

E

on

1150 mJ

E

off

1250 mJ

C

ies

186 nF

C

oes

V

CE

= 25 V; V

GE

= 0 V; f = 1 MHz 13.7 nF

C

res

3.0 nF

Q

ge

I

C

= 1200 A; V

CE

= 1250 V; V

GE

=

±

15 V 12.2 µC

R

thJC

0.009 K/W

 Collector emitter saturation voltage is given at chip level

Inductive load; T

VJ

= 125°C; V

GE

=

±

15 V;

V

CC

= 1250V; I

C

= 1200A; R

G

= 1.5Ω; L

σ

= 100nH

p h a s e - o u t

2 - 6

20110119a

MIO 1200-25E10

Diode

Symbol Conditions Maximum Ratings

I

F80

T

C

= 80°C 1200 A

I

FSM

V

R

= 0 V; T

VJ

= 125°C; t

p

= 10 ms; half-sinewave 11000 A

Symbol Conditions Characteristic Values

min. typ. max.

V

F

 I

F

= 1200 A; T

VJ

= 25°C 1.75 V

T

VJ

= 125°C 1.8 V

I

RM

1180 A

t

rr

970 ns

Q

RR

1150 µC

E

rec

990 mJ

R

thJC

0.017 K/W

 Forward voltage is given at chip level

Module

Symbol Conditions Maximum Ratings

T

JM

max. junction temperature +150 °C

T

VJ

Operating temperature -40...+125 °C

T

stg

Storage temperature -40...+125 °C

V

ISOL

50 Hz 5000 V~

M

d

Mounting torque Base-heatsink, M6 screws 4 - 6 Nm

Main terminals, M8 screws 8 - 10 Nm

Symbol Conditions Characteristic Values

min. typ. max.

d

A

Clearance distance terminal to base 23 mm

terminal to terminal 19 mm

d

S

Surface creepage terminal to base 33 mm

distance terminal to terminal 33 mm

L

σσ

σ

Module stray inductance, C to E terminal 10 nH

R

term-chip

*

)

Resistance terminal to chip 0.085 mΩ

R

thCH

per module; λ grease = 1 W/m•K 0.006 K/W

Weight 1500 g

*

)

V = V

CE(sat)

+ R

term-chip

· I

C

resp. V = V

F

+ R

term-chip

· I

F

V

CC

= 1250 V; I

C

= 1200 A;

V

GE

=

±

15 V; R

G

= 1.5 Ω; T

VJ

= 125°C

Inductive load; L

σ

= 100nH

p h a s e - o u t

3 - 6

20110119a

MIO 1200-25E10

0

200

400

600

800

1000

1200

1400

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2200

2400

012345

V

CE

[V]

I

C

[A]

V

GE

= 15 V

25 °C

125 °C

0

200

400

600

800

1000

1200

1400

1600

1800

2000

2200

2400

012345678910111213

V

GE

[V]

I

C

[A]

25 °C

125 °C

0

200

400

600

800

1000

1200

1400

1600

1800

2000

2200

2400

0123456

V

CE

[V]

I

C

[A]

Tvj = 25°C

17 V

9 V

11 V

15 V

13 V

0

200

400

600

800

1000

1200

1400

1600

1800

2000

2200

2400

0123456

V

CE

[V]

I

C

[A]

T

vj

= 125 °C

15 V

9 V

11 V

13 V

17 V

0

5

10

15

20

024681012

Q

g

[µC]

V

GE

[V]

V

CC

= 1250

V

CC

= 1750

I

C

= 1200 A

T

vj

= 25 °C

1

10

100

1000

0 5 10 15 20 25 30 35

V

CE

[V]

C [nF]

V

GE

= 0 V

f

OSC

= 1 MHz

V

OSC

= 50 mV

C

ies

C

oes

C

res

Fig. 3 Typical onstate characteristics, chip level Fig. 4 Typical transfer characteristics, chip level

Fig. 1 Typical output characteristics, chip level Fig. 2 Typical output characteristics, chip level

Fig. 5 Typical gate charge characteristics Fig. 6 Typical capacitances vs

collector-emitter voltage

p h a s e - o u t

MIO1200-25E10

MIO1200-25E10

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