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MIO1200-25E10

P1-P3P4-P6
© 2011 IXYS All rights reserved
4 - 6
20110119a
MIO 1200-25E10
Fig. 12 Typical diode forward characteristics,
chip level
Fig. 9 Typical switching timesvs collector current Fig. 10 Typical switching timesvs gate resistor
Fig. 11 Turn-off safe operating area (RBSOA)
Fig. 7 Typical switching energies per pulse
vs collector current
Fig. 8 Typical switching energies per pulse
vs gate resistor
0.01
0.1
1
10
0 500 1000 1500 2000 2500
I
C
[A]
t
d(on)
, t
r
, t
d(off)
, t
f
[µs]
V
CC
= 1250 V
R
G
= 1.5 ohm
V
GE
= ±15 V
T
vj
= 125 °C
L
σ
= 100 nH
t
d(on)
t
d(off)
t
f
t
r
0.1
1
10
0 5 10 15 20
R
G
[ohm]
t
d(on)
, t
r
, t
d(off)
, t
f
t
d(on)
t
d(off)
t
r
t
f
V
CC
= 1250 V
I
C
= 1200 A
V
GE
= ±15 V
T
vj
= 125 °C
L
σ
= 100 nH
0
0.5
1
1.5
2
2.5
0 500 1000 1500 2000 2500 3000
V
CE
[V]
I
Cpulse
/ I
C
IC, Chip
IC, Module
V
CC
≤
1800 V
0.0
1.0
2.0
3.0
4.0
5.0
6.0
0 5 10 15 20
R
G
[ohm]
E
on
, E
off
[J]
E
on
E
off
V
CC
= 1250 V
I
C
= 1200 A
V
GE
= ±15 V
T
vj
= 125 °C
L
σ
= 100 nH
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0
1000
2000
3000
I
C
[A]
E
on
, E
of
f
[J]
E
on
E
off
V
CC
= 1250 V
R
G
= 1.5 ohm
V
GE
= ±15 V
T
vj
= 125 °C
L
σ
= 100 nH
0
200
400
600
800
1000
1200
1400
1600
1800
2000
2200
2400
00.511.522.5
V
F
[V]
I
F
[A]
25 °C
125 °C
p h a s e - o u t
© 2011 IXYS All rights reserved
5 - 6
20110119a
MIO 1200-25E10
Fig. 14 Typical reverse recovery characteristics
vs gate resistor
Fig. 15 Thermal impedance vs time
Fig. 13 Typical reverse recovery characteristics
vs forward current
)e-(1R = (t)Z
n
1i
t/-
iJCth
i
∑
=
τ
0
100
200
300
400
500
600
700
800
900
1000
1100
1200
0 5 10 15 20
R
G
[ohm]
E
rec
[mJ]
0
200
400
600
800
1000
1200
1400
1600
I
RM
[A], Q
RR
[µC]
I
RM
Q
RR
E
rec
V
CC
= 1250 V
I
C
= 1200 A
V
GE
= ±15 V
T
vj
= 125 °C
L
σ
= 100 nH
0.0001
0.001
0.01
0.1
0.001 0.01 0.1 1 10
t [s]
Z
th(j-h)
[K/W] IGBT, DIODE
Z
th(j-c)
IGBT
Z
th(j-c)
Diode
[A], Q
[µC]
0
200
400
600
800
1000
1200
1400
1600
0
500
1000
1500
2000
2500
I
F
[A]
E
rec
[mJ], I
RM
RR
Q
RR
E
rec
I
RM
V
CC
= 1250 V
R
G
= 1.5 ohm
V
GE
= ±15 V
T
vj
= 125 °C
L
σ
= 100 nH
i 1 2 3 4
Ri(K/kW)
5.97 1.99 0.619 0.465
IGBT
τ
i
(ms)
179 22 2.4 0.54
Ri(K/kW)
11.1 3.36 1.27 1.34
DIODE
τ
i
(ms)
189 30 7.4 1.4
p h a s e - o u t
© 2011 IXYS All rights reserved
6 - 6
20110119a
MIO 1200-25E10
Outline drawing
'
'
Note: all dimensions are shown in mm
p h a s e - o u t
P1-P3P4-P6

MIO1200-25E10

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Description:
MOD IGBT SGL SWITCH 2500V E10
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