IRFI4019H-117P Datasheet IRFI4019H-117P | P1-P3

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8/22/06

IRFI4019H-117P

Notes  through  are on page 2

DIGITAL AUDIO MOSFET

TO-220 Full-Pak 5 PIN

Features

 Integrated Half-Bridge Package

 Reduces the Part Count by Half

 Facilitates Better PCB Layout

 Key Parameters Optimized for Class-D

Audio Amplifier Applications

 Low R

DS(ON)

for Improved Efficiency

 Low Qg and Qsw for Better THD and

Improved Efficiency

 Low Qrr for Better THD and Lower EMI

 Can Delivery up to 200W per Channel into

8Ω Load in Half-Bridge Configuration

Amplifier

 Lead-Free Package

Description

This Digital Audio MosFET Half-Bridge is specifically designed for Class D audio amplifier applications. It

consists of two power MosFET switches connected in half-bridge configuration. The latest process is used

to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery, and

internal Gate resistance are optimized to improve key Class D audio amplifier performance factors such

as efficiency, THD and EMI. These combine to make this Half-Bridge a highly efficient, robust and reliable

device for Class D audio amplifier applications.

G1, G2 D1, D2 S1, S2

Gate Drain Source

Absolute Maximum Ratings h

Parameter Units

V

DS

Drain-to-Source Voltage V

V

GS

Gate-to-Source Voltage

I

D

@ T

C

= 25°C Continuous Drain Current, V

GS

@ 10V

A

I

D

@ T

C

= 100°C Continuous Drain Current, V

GS

@ 10V

I

DM

Pulsed Drain Current c

E

AS

Single Pulse Avalanche Energyd

mJ

P

D

@T

C

= 25°C

Power Dissipation f

W

P

D

@T

C

= 100°C

Power Dissipation f

Linear Derating Factor W/°C

T

J

Operating Junction and °C

T

STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

(1.6mm from case)

Mounting torque, 6-32 or M3 screw

Thermal Resistance h

Parameter Typ. Max. Units

R

θJC

Junction-to-Case f

––– 6.9

R

θJA

Junction-to-Ambient f

––– 65

77

18

7.2

0.15

10lbxin (1.1Nxm)

-55 to + 150

300

Max.

6.2

34

±20

150

8.7

S2

G2

S1/D2

G1

D1

V

DS

150 V

R

DS(ON)

typ. @ 10V

80

m:

Q

g

typ.

13 nC

Q

sw

typ.

4.1 nC

R

G(int)

typ.

2.5 Ω

T

J

max

150 °C

Key Parameters h

PD - 97074A

IRFI4019H-117P

2 www.irf.com

S

D

G

 Repetitive rating; pulse width limited by max. junction temperature.

 Starting T

J

= 25°C, L = 5.8mH, R

G

= 25Ω, I

AS

= 5.2A.

 Pulse width ≤ 400µs; duty cycle ≤ 2%.

Notes:

 R

θ

is measured at T

J

of approximately 90°C.

 Limited by Tjmax. See Figs. 14, 15, 17a, 17b for repetitive

avalanche information

 Specifications refer to single MosFET.

Electrical Characteristics @ T

J

= 25°C (unless otherwise specified) h

Parameter Min. Typ. Max. Units

BV

DSS

Drain-to-Source Breakdown Voltage 150 ––– ––– V

∆ΒV

DSS

/∆T

J

Breakdown Voltage Temp. Coefficient ––– 0.19 ––– V/°C

R

DS(on)

Static Drain-to-Source On-Resistance ––– 80 95

mΩ

V

GS(th)

Gate Threshold Voltage 3.0 ––– 4.9 V

∆V

GS(th)

/∆T

J

Gate Threshold Voltage Coefficient ––– -11 ––– mV/°C

I

DSS

Drain-to-Source Leakage Current ––– ––– 20 µA

––– ––– 250

I

GSS

Gate-to-Source Forward Leakage ––– ––– 100 nA

Gate-to-Source Reverse Leakage ––– ––– -100

g

fs

Forward Transconductance 11 ––– ––– S

Q

g

Total Gate Charge ––– 13 20

Q

gs1

Pre-Vth Gate-to-Source Charge ––– 3.3 –––

Q

gs2

Post-Vth Gate-to-Source Charge ––– 0.8 ––– nC

Q

gd

Gate-to-Drain Charge ––– 3.9 –––

Q

godr

Gate Charge Overdrive ––– 5.0 ––– See Fig. 6 and 19

Q

sw

Switch Charge (Q

gs2

+ Q

gd

)

––– 4.1 –––

R

G(int)

Internal Gate Resistance ––– 2.5 ––– Ω

t

d(on)

Turn-On Delay Time ––– 7.0 –––

t

r

Rise Time ––– 6.6 –––

t

d(off)

Turn-Off Delay Time ––– 13 ––– ns

t

f

Fall Time ––– 3.1 –––

C

iss

Input Capacitance ––– 810 –––

C

oss

Output Capacitance ––– 100 ––– pF

C

rss

Reverse Transfer Capacitance ––– 15 –––

C

oss

Effective Output Capacitance ––– 97 –––

L

D

Internal Drain Inductance ––– 4.5 ––– Between lead,

nH 6mm (0.25in.)

L

S

Internal Source Inductance ––– 7.5 ––– from package

Diode Characteristics h

Parameter Min. Typ. Max. Units

I

S

@ T

C

= 25°C

Continuous Source Current ––– ––– 8.7

(Body Diode) A

I

SM

Pulsed Source Current ––– ––– 34

(Body Diode)c

V

SD

Diode Forward Voltage ––– ––– 1.3 V

t

rr

Reverse Recovery Time ––– 57 86 ns

Q

rr

Reverse Recovery Charge ––– 140 210 nC

I

D

= 5.2A

ƒ = 1.0MHz, See Fig.5

T

J

= 25°C, I

F

= 5.2A

di/dt = 100A/µs e

T

J

= 25°C, I

S

= 5.2A, V

GS

= 0V e

showing the

integral reverse

p-n junction diode.

Conditions

V

GS

= 0V, I

D

= 250µA

Reference to 25°C, I

D

= 1mA

V

GS

= 10V, I

D

= 5.2A e

V

DS

= V

GS

, I

D

= 50µA

V

DS

= 150V, V

GS

= 0V

V

GS

= 0V, V

DS

= 0V to 120V

V

DS

= 150V, V

GS

= 0V, T

J

= 125°C

V

GS

= 20V

V

GS

= -20V

V

GS

= 10V

I

D

= 5.2A

V

GS

= 0V

MOSFET symbol

R

G

= 2.4Ω

V

DS

= 50V, I

D

= 5.2A

Conditions

and center of die contact

V

DD

= 75V, V

GS

= 10Ve

V

DS

= 75V

V

DS

= 25V

IRFI4019H-117P

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Fig 2. Typical Output Characteristics

Fig 1. Typical Output Characteristics

Fig 3. Typical Transfer Characteristics

Fig 4. Normalized On-Resistance vs. Temperature

Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage

Fig 5. Typical Capacitance vs.Drain-to-Source Voltage

0.1 1 10 100

V

DS

, Drain-to-Source Voltage (V)

0.01

0.1

1

10

100

I

D

,

D

r

a

i

n

-

t

o

-

S

o

u

r

c

e

C

u

r

e

n

t

(

A

)

≤

60µs PULSE WIDTH

Tj = 25°C

5.5V

VGS

TOP 15V

12V

10V

9.0V

8.0V

7.0V

6.0V

BOTTOM 5.5V

1 10 100 1000

V

DS

, Drain-to-Source Voltage (V)

1

10

100

1000

10000

100000

C

,

C

a

p

a

c

i

t

a

n

c

e

(

p

F

)

Coss

Crss

Ciss

V

GS

= 0V, f = 1 MHZ

C

iss

= C

gs

+ C

gd

, C

ds

SHORTED

C

rss

= C

gd

C

oss

= C

ds

+ C

gd

0 5 10 15 20

Q

G

Total Gate Charge (nC)

0

4

8

12

16

20

V

G

S

,

G

a

t

e

-

t

o

-

S

o

u

r

c

e

V

o

l

t

a

g

e

(

V

)

V

DS

= 120V

VDS= 75V

VDS= 30V

I

D

= 5.2A

0.1 1 10 100

V

DS

, Drain-to-Source Voltage (V)

0.1

1

10

100

I

D

,

D

r

a

i

n

-

t

o

-

S

o

u

r

c

e

C

u

r

e

n

t

(

A

)

≤

60µs PULSE WIDTH

Tj = 150°C

5.5V

VGS

TOP 15V

12V

10V

9.0V

8.0V

7.0V

6.0V

BOTTOM 5.5V

-60 -40 -20 0 20 40 60 80 100 120 140 160

T

J

, Junction Temperature (°C)

0.0

0.5

1.0

1.5

2.0

2.5

R

D

S

(

o

n

)

,

D

r

a

i

n

-

t

o

-

S

o

u

r

c

e

O

n

R

e

s

i

s

t

a

n

c

e

(

N

o

r

m

a

l

i

z

e

d

)

I

D

= 5.2A

V

GS

= 10V

4 5 6 7 8

V

GS

, Gate-to-Source Voltage (V)

0.1

1

10

100

I

D

,

D

r

a

i

n

-

t

o

-

S

o

u

r

c

e

C

u

r

e

n

t

(

Α

)

V

DS

= 50V

≤

60µs PULSE WIDTH

T

J

= 25°C

T

J

= 175°C

IRFI4019H-117P

IRFI4019H-117P

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