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HFA3046BZ

P1-P3P4-P6P7-P9P10-P12P13-P14
4
FN3076.15
August 11, 2015
Power Gain-Bandwidth Product,
f
MAX
I
C
= 10mA, V
CE
= 5V - 6 - - 2.5 - GHz
Base to Emitter Capacitance V
BE
= -3V - 200 - - 500 - fF
Collector to Base Capacitance V
CB
= 3V - 200 - - 500 - fF
Electrical Specifications T
A
= +25°C (Continued)
PARAMETER TEST CONDITIONS
DIE SOIC, QFN
UNITSMIN TYP MAX MIN TYP MAX
Electrical Specifications T
A
= +25°C
PARAMETER TEST CONDITIONS
DIE SOIC, QFN
UNITSMIN TYP MAX MIN TYP MAX
DC PNP CHARACTERISTICS
Collector to Base Breakdown
Voltage, V
(BR)CBO
I
C
= -100µA, I
E
= 0 10 15 - 10 15 - V
Collector to Emitter Breakdown
Voltage, V
(BR)CEO
I
C
= -100µA, I
B
= 0 8 15 - 8 15 - V
Collector to Emitter Breakdown
Voltage, V
(BR)CES
I
C
= -100µA, Base Shorted to Emitter 10 15 - 10 15 - V
Emitter to Base Breakdown
Voltage, V
(BR)EBO
I
E
= -10µA, I
C
= 0 4.5 5 - 4.5 5 - V
Collector Cutoff Current, I
CEO
V
CE
= -6V, I
B
= 0 - 2 100 - 2 100 nA
Collector Cutoff Current, I
CBO
V
CB
= -8V, I
E
= 0 - 0.1 10 - 0.1 10 nA
Collector to Emitter Saturation
Voltage, V
CE(SAT)
I
C
= -10mA, I
B
= -1mA - 0.3 0.5 - 0.3 0.5 V
Base to Emitter Voltage, V
BE
I
C
= -10mA - 0.85 0.95 - 0.85 0.95 V
DC Forward-Current Transfer
Ratio, h
FE
I
C
= -10mA, V
CE
= -2V 20 60 - 20 60 -
Early Voltage, V
A
I
C
= -1mA, V
CE
= -3.5V 10 20 - 10 20 - V
Base to Emitter Voltage Drift I
C
= -10mA - -1.5 - - -1.5 - mV/°C
Collector to Collector Leakage - 1 - - 1 - pA
Electrical Specifications T
A
= +25°C
PARAMETER TEST CONDITIONS
DIE SOIC, QFN
UNITSMIN TYP MAX MIN TYP MAX
DYNAMIC PNP CHARACTERISTICS
Noise Figure f = 1.0GHz, V
CE
= -5V,
I
C
= -5mA, Z
S
= 50
- 3.5 - - 3.5 - dB
f
T
Current Gain-Bandwidth
Product
I
C
= -1mA, V
CE
= -5V - 2 - - 2 - GHz
I
C
= -10mA, V
CE
= -5V - 5.5 - - 5.5 - GHz
Power Gain-Bandwidth
Product
I
C
= -10mA, V
CE
= -5V - 3 - - 2 - GHz
Base to Emitter Capacitance V
BE
= 3V - 200 - - 500 - fF
Collector to Base Capacitance V
CB
= -3V - 300 - - 600 - fF
HFA3046, HFA3096, HFA3127, HFA3128
5
FN3076.15
August 11, 2015
DIFFERENTIAL PAIR MATCHING CHARACTERISTICS FOR THE HFA3046
Input Offset Voltage I
C
= 10mA, V
CE
= 5V - 1.5 5.0 - 1.5 5.0 mV
Input Offset Current I
C
= 10mA, V
CE
= 5V - 5 25 - 5 25 µA
Input Offset Voltage TC I
C
= 10mA, V
CE
= 5V - 0.5 - - 0.5 - µV/°C
S-Parameter and PSPICE model data is available from Intersil Sales Offices, and Intersil Corporation’s web site.
Electrical Specifications T
A
= +25°C (Continued)
PARAMETER TEST CONDITIONS
DIE SOIC, QFN
UNITSMIN TYP MAX MIN TYP MAX
Common Emitter S-Parameters of NPN 3µm x 50 µm Transistor
FREQ. (Hz) |S
11
| PHASE(S
11
)|S
21
| PHASE(S
21
)|S
12
| PHASE(S
12
)|S
22
|PHASE(S
22
)
V
CE
= 5V and I
C
= 5mA
1.0E+08 0.83 -11.78 11.07 168.57 1.41E-02 78.88 0.97 -11.05
2.0E+08 0.79 -22.82 10.51 157.89 2.69E-02 68.63 0.93 -21.35
3.0E+08 0.73 -32.64 9.75 148.44 3.75E-02 59.58 0.86 -30.44
4.0E+08 0.67 -41.08 8.91 140.36 4.57E-02 51.90 0.79 -38.16
5.0E+08 0.61 -48.23 8.10 133.56 5.19E-02 45.50 0.73 -44.59
6.0E+08 0.55 -54.27 7.35 127.88 5.65E-02 40.21 0.67 -49.93
7.0E+08 0.50 -59.41 6.69 123.10 6.00E-02 35.82 0.62 -54.37
8.0E+08 0.46 -63.81 6.11 119.04 6.27E-02 32.15 0.57 -58.10
9.0E+08 0.42 -67.63 5.61 115.57 6.47E-02 29.07 0.53 -61.25
1.0E+09 0.39 -70.98 5.17 112.55 6.63E-02 26.45 0.50 -63.96
1.1E+09 0.36 -73.95 4.79 109.91 6.75E-02 24.19 0.47 -66.31
1.2E+09 0.34 -76.62 4.45 107.57 6.85E-02 22.24 0.45 -68.37
1.3E+09 0.32 -79.04 4.15 105.47 6.93E-02 20.53 0.43 -70.19
1.4E+09 0.30 -81.25 3.89 103.57 7.00E-02 19.02 0.41 -71.83
1.5E+09 0.28 -83.28 3.66 101.84 7.05E-02 17.69 0.40 -73.31
1.6E+09 0.27 -85.17 3.45 100.26 7.10E-02 16.49 0.39 -74.66
1.7E+09 0.25 -86.92 3.27 98.79 7.13E-02 15.41 0.38 -75.90
1.8E+09 0.24 -88.57 3.10 97.43 7.17E-02 14.43 0.37 -77.05
1.9E+09 0.23 -90.12 2.94 96.15 7.19E-02 13.54 0.36 -78.12
2.0E+09 0.22 -91.59 2.80 94.95 7.21E-02 12.73 0.35 -79.13
2.1E+09 0.21 -92.98 2.68 93.81 7.23E-02 11.98 0.35 -80.09
2.2E+09 0.20 -94.30 2.56 92.73 7.25E-02 11.29 0.34 -80.99
2.3E+09 0.20 -95.57 2.45 91.70 7.27E-02 10.64 0.34 -81.85
2.4E+09 0.19 -96.78 2.35 90.72 7.28E-02 10.05 0.33 -82.68
2.5E+09 0.18 -97.93 2.26 89.78 7.29E-02 9.49 0.33 -83.47
2.6E+09 0.18 -99.05 2.18 88.87 7.30E-02 8.96 0.33 -84.23
2.7E+09 0.17 -100.12 2.10 88.00 7.31E-02 8.47 0.33 -84.97
2.8E+09 0.17 -101.15 2.02 87.15 7.31E-02 8.01 0.33 -85.68
2.9E+09 0.16 -102.15 1.96 86.33 7.32E-02 7.57 0.33 -86.37
3.0E+09 0.16 -103.11 1.89 85.54 7.32E-02 7.16 0.33 -87.05
HFA3046, HFA3096, HFA3127, HFA3128
6
FN3076.15
August 11, 2015
V
CE
= 5V and I
C
= 10mA
1.0E+08 0.72 -16.43 15.12 165.22 1.27E-02 75.41 0.95 -14.26
2.0E+08 0.67 -31.26 13.90 152.04 2.34E-02 62.89 0.88 -26.95
3.0E+08 0.60 -43.76 12.39 141.18 3.13E-02 52.58 0.79 -37.31
4.0E+08 0.53 -54.00 10.92 132.57 3.68E-02 44.50 0.70 -45.45
5.0E+08 0.47 -62.38 9.62 125.78 4.05E-02 38.23 0.63 -51.77
6.0E+08 0.42 -69.35 8.53 120.37 4.31E-02 33.34 0.57 -56.72
7.0E+08 0.37 -75.26 7.62 116.00 4.49E-02 29.47 0.51 -60.65
8.0E+08 0.34 -80.36 6.86 112.39 4.63E-02 26.37 0.47 -63.85
9.0E+08 0.31 -84.84 6.22 109.36 4.72E-02 23.84 0.44 -66.49
1.0E+09 0.29 -88.83 5.69 106.77 4.80E-02 21.75 0.41 -68.71
1.1E+09 0.27 -92.44 5.23 104.51 4.86E-02 20.00 0.39 -70.62
1.2E+09 0.25 -95.73 4.83 102.53 4.90E-02 18.52 0.37 -72.28
1.3E+09 0.24 -98.75 4.49 100.75 4.94E-02 17.25 0.35 -73.76
1.4E+09 0.22 -101.55 4.19 99.16 4.97E-02 16.15 0.34 -75.08
1.5E+09 0.21 -104.15 3.93 97.70 4.99E-02 15.19 0.33 -76.28
1.6E+09 0.20 -106.57 3.70 96.36 5.01E-02 14.34 0.32 -77.38
1.7E+09 0.20 -108.85 3.49 95.12 5.03E-02 13.60 0.31 -78.41
1.8E+09 0.19 -110.98 3.30 93.96 5.05E-02 12.94 0.31 -79.37
1.9E+09 0.18 -113.00 3.13 92.87 5.06E-02 12.34 0.30 -80.27
2.0E+09 0.18 -114.90 2.98 91.85 5.07E-02 11.81 0.30 -81.13
2.1E+09 0.17 -116.69 2.84 90.87 5.08E-02 11.33 0.30 -81.95
2.2E+09 0.17 -118.39 2.72 89.94 5.09E-02 10.89 0.29 -82.74
2.3E+09 0.16 -120.01 2.60 89.06 5.10E-02 10.50 0.29 -83.50
2.4E+09 0.16 -121.54 2.49 88.21 5.11E-02 10.13 0.29 -84.24
2.5E+09 0.16 -122.99 2.39 87.39 5.12E-02 9.80 0.29 -84.95
2.6E+09 0.15 -124.37 2.30 86.60 5.12E-02 9.49 0.29 -85.64
2.7E+09 0.15 -125.69 2.22 85.83 5.13E-02 9.21 0.29 -86.32
2.8E+09 0.15 -126.94 2.14 85.09 5.13E-02 8.95 0.29 -86.98
2.9E+09 0.15 -128.14 2.06 84.36 5.14E-02 8.71 0.29 -87.62
3.0E+09 0.14 -129.27 1.99 83.66 5.15E-02 8.49 0.29 -88.25
Common Emitter S-Parameters of PNP 3 µm x 50 µm Transistor
FREQ. (Hz) |S
11
| PHASE(S
11
)|S
21
| PHASE(S
21
)|S
12
| PHASE(S
12
)|S
22
|PHASE(S
22
)
V
CE
= -5V and I
C
= -5mA
1.0E+08 0.72 -16.65 10.11 166.77 1.66E-02 77.18 0.96 -10.76
2.0E+08 0.68 -32.12 9.44 154.69 3.10E-02 65.94 0.90 -20.38
3.0E+08 0.62 -45.73 8.57 144.40 4.23E-02 56.39 0.82 -28.25
4.0E+08 0.57 -57.39 7.68 135.95 5.05E-02 48.66 0.74 -34.31
5.0E+08 0.52 -67.32 6.86 129.11 5.64E-02 42.52 0.67 -38.81
Common Emitter S-Parameters of NPN 3µm x 50 µm Transistor (Continued)
FREQ. (Hz) |S
11
| PHASE(S
11
)|S
21
| PHASE(S
21
)|S
12
| PHASE(S
12
)|S
22
|PHASE(S
22
)
HFA3046, HFA3096, HFA3127, HFA3128
P1-P3P4-P6P7-P9P10-P12P13-P14

HFA3046BZ

Mfr. #:
Buy HFA3046BZ
Manufacturer:
Renesas / Intersil
Description:
RF Bipolar Transistors W/ANNEAL TXARRAY 3X NPN + NPN DIFF PAIR
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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