A2T09D400--23NR6
1
RF Device Data
Freescale Semiconductor, Inc.
RF Power LDMOS Transistor
N--Channel Enhancement--Mode Lateral MOSFET
This 93 W symmetrical Doherty RF power LDMOS transistor is designed for
cellular base station applications covering the frequency range of 716 to
960 MHz.
800 MHz
Typical Doherty Single--Carrier W--CDMA Performance: V
DD
=28Vdc,
I
DQA
= 1200 mA, V
GSB
=1.12Vdc,P
out
= 93 W Avg., Input Signal
PAR = 9.9 dB @ 0.01% Probability on CCDF.
Frequency
G
ps
(dB)
D
(%)
Output PAR
(dB)
ACPR
(dBc)
776 MHz 17.8 45.9 7.0 –36.8
806 MHz 18.2 46.8 7.2 –37.8
836 MHz 17.9 48.0 7.1 –37.1
Features
Production Tested in a Symmetrical Doherty Configuration
Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
Designed for Digital Predistortion Error Correction Systems
Document Number: A2T09D400--23N
Rev. 0, 3/2016
Freescale Semiconductor
Technical Data
716–960 MHz, 93 W AVG., 28 V
AIRFAST RF POWER LDMOS
TRANSISTOR
A2T09D400--23NR6
OM--1230--4L2S
PLASTIC
Figure 1. Pin Connections
(Top View)
RF
outA
/V
DSA
RF
outB
/V
DSB
RF
inA
/V
GSA
RF
inB
/V
GSB
VBW
A
(1)
6
3
15
24
Carrier
Peaking
VBW
B
(1)
Note: Exposed backside of the package is
the source terminal for the transistors.
1. Device cannot operate with V
DD
current
supplied through pin 3 and pin 6.
Freescale Semiconductor, Inc., 2016. All rights reserved.
2
RF Device Data
Freescale Semiconductor, Inc.
A2T09D400--23NR6
Table 1. Maximum Ratings
Rating Symbol Value Unit
Drain--Source Voltage V
DSS
–0.5, +70 Vdc
Gate--Source Voltage V
GS
–6.0, +10 Vdc
Operating Voltage V
DD
32, +0 Vdc
Storage Temperature Range T
stg
–65 to +150 C
Case Operating Temperature Range T
C
–40 to +150 C
Operating Junction Temperature Range
(1,2)
T
J
–40 to +225 C
Table 2. Thermal Characteristics
Characteristic Symbol Value
(2,3)
Unit
Thermal Resistance, Junction to Case
Case Temperature 78C, 93 W Avg., W--CDMA, 28 Vdc, I
DQA
= 1200 mA, V
GSB
=1.12Vdc,
806 MHz
R
JC
0.29 C/W
Table 3. ESD Protection Characteristics
Test Methodology Class
Human Body Model (per JESD22--A114) 2
Machine Model (per EIA/JESD22--A115) B
Charge Device Model (per JESD22--C101) IV
Table 4. Moisture Sensitivity Level
Test Methodology Rating Package Peak Temperature Unit
Per JESD22--A113, IPC/JEDEC J--STD--020 3 260 C
Table 5. Electrical Characteristics (T
A
=25C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
Off Characteristics
(4)
Zero Gate Voltage Drain Leakage Current
(V
DS
=70Vdc,V
GS
=0Vdc)
I
DSS
10 Adc
Zero Gate Voltage Drain Leakage Current
(V
DS
=32Vdc,V
GS
=0Vdc)
I
DSS
1 Adc
Gate--Source Leakage Current
(V
GS
=5Vdc,V
DS
=0Vdc)
I
GSS
1 Adc
On Characteristics -- Side A
(4)
Gate Threshold Voltage
(V
DS
=10Vdc,I
D
= 270 Adc)
V
GS(th)
1.0 1.5 2.0 Vdc
Gate Quiescent Voltage
(V
DD
=28Vdc,I
D
= 1200 mAdc, Measured in Functional Test)
V
GSA(Q)
1.5 2.2 2.5 Vdc
Drain--Source On--Voltage
(V
GS
=10Vdc,I
D
=2.7Adc)
V
DS(on)
0.1 0.14 0.3 Vdc
On Characteristics -- Side B
(4)
Gate Threshold Voltage
(V
DS
=10Vdc,I
D
= 270 Adc)
V
GS(th)
1.0 1.5 2.0 Vdc
Drain--Source On--Voltage
(V
GS
=10Vdc,I
D
=2.7Adc)
V
DS(on)
0.05 0.14 0.3 Vdc
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.nxp.com/RF/calculators
.
3. Refer to AN1955, Thermal M easurement Methodology of RF Power Amplifiers. Go to http://www.nxp.com/RF
and search for AN1955.
4. Each side of device m easured separately.
(continued)
A2T09D400--23NR6
3
RF Device Data
Freescale Semiconductor, Inc.
Table 5. Electrical Characteristics
(T
A
=25C unless otherwise noted) (continued)
Characteristic Symbol Min Typ Max Unit
Functional Tests 776 MHz
(1,2)
(In Freescale Doherty Test Fixture, 50 ohm system) V
DD
=28Vdc,I
DQA
= 1200 mA, V
GSB
=1.12Vdc,
P
out
= 93 W Avg., f = 776 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
ACPR measured in 3.84 MHz Channel Bandwidth @ 5MHzOffset.
Power Gain
G
ps
16.5 17.8 19.0 dB
Drain Efficiency
D
43.5 45.9 %
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF PAR 6.8 7.0 dB
Adjacent Channel Power Ratio ACPR –36.8 –34.7 dBc
Functional Tests 836 MHz
(1,2)
(In Freescale Doherty Test Fixture, 50 ohm system) V
DD
=28Vdc,I
DQA
= 1200 mA, V
GSB
=1.12Vdc,
P
out
= 93 W Avg., f = 836 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
ACPR measured in 3.84 MHz Channel Bandwidth @ 5MHzOffset.
Power Gain
G
ps
16.5 17.9 19.0 dB
Drain Efficiency
D
43.5 48.0 %
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF PAR 6.8 7.1 dB
Adjacent Channel Power Ratio ACPR –37.1 –34.7 dBc
Load Mismatch
(2)
(In Freescale Doherty Test Fixture, 50 ohm system) I
DQA
= 1200 mA, V
GSB
= 1.12 Vdc, f = 806 MHz, 12 sec(on),
10% Duty Cycle
VSWR 10:1 at 32 Vdc, 497 W Pulsed CW Output Power
(3 dB Input Overdrive from 400 W Pulsed CW Rated Power)
No Device Degradation
Typical Performance
(2)
(In Freescale Doherty Test Fixture, 50 ohm system) V
DD
=28Vdc,I
DQA
= 1200 mA, V
GSB
=1.12Vdc,
776–836 MHz Bandwidth
P
out
@ 1 dB Compression Point, CW P1dB 400 W
P
out
@ 3 dB Compression Point
(3)
P3dB 540 W
AM/PM
(Maximum value measured at the P3dB compression point across
the 776–836 MHz bandwidth)
–7.1
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
VBW
res
35 MHz
Gain Flatness in 60 MHz Bandwidth @ P
out
=93WAvg. G
F
0.3 dB
Gain Variation over Temperature
(--30Cto+85C)
G 0.01 dB/C
Output Power Variation over Temperature
(--30Cto+85C)
P1dB 0.01 dB/C
Table 6. Ordering Information
Device Tape and Reel Information Package
A2T09D400--23NR6 R6 Suffix = 150 Units, 56 mm Tape Width, 13--inch Reel OM--1230--4L2S
1. Part internally matched both on input and output.
2. Measurements made with device in an asymmetrical Doherty configuration.
3. P3dB = P
avg
+ 7.0 dB where P
avg
is the average output power measured using an unclipped W--CDMA single--carrier input signal where
output PAR is compressed to 7.0 dB @ 0.01% probability on CCDF.

A2T09D400-23NR6

Mfr. #:
Manufacturer:
NXP / Freescale
Description:
RF MOSFET Transistors AIRFAST RF POWER LDMOS TRANSISTOR 716-960 MHz, 93 W AVG., 28 V
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet