4
RF Device Data
Freescale Semiconductor, Inc.
A2T09D400--23NR6
Figure 2. A 2T09D400--23NR6 Test Circuit Component Layout
D76131
Z1
R1
C1
R2
R3
C3
C4
C5
C6
C7
C8
C9
C2
C11
C10
C12
--
--
C13
C14
C16
C17
C18
C19
C20
C21
C22
C23
C24
C25
C15
C26
C27
V
DDA
V
DDB
C
P
V
GGA
A2T09D400--24N
Rev. 2
V
GGB
CUT OUT AREA
Table 7. A2T09D400--23NR6 Test Circuit Component Designations and Values
Part Description Part Number Manufacturer
C1, C10 10 F Chip Capacitors GRM32ER61H106KA12L Murata
C2, C3, C6, C9, C15, C23 68 pF Chip Capacitors ATC600F680R0BT250XT ATC
C4, C7, C21 4.7 pF Chip Capacitors ATC600F4R7BT250XT ATC
C5, C8 6.2 pF Chip Capacitors ATC600F6R2BT250XT ATC
C11, C12, C16, C24 10 F Chip Capacitors C5750X7S2A106M230KB TDK
C13, C14 470 F, 63 V Electrolytic Capacitors MCGPR63V477M13X26-RH Multicomp
C17 1.8 pF Chip Capacitor ATC600F1R8BT250XT ATC
C18 8.2 pF Chip Capacitor ATC600F8R2BT250XT ATC
C19 12 pF Chip Capacitor ATC600F120BT250XT ATC
C20 0.5 pF Chip Capacitor ATC600F0R5BT250XT ATC
C22 15 pF Chip Capacitor ATC600F150BT250XT ATC
C25 2.4 pF Chip Capacitor ATC600F2R4BT250XT ATC
C26, C27 27 pF Chip Capacitors ATC600F270BT250XT ATC
R1 50 , 10 W Chip Resistor CW12010T0050GBK ATC
R2, R3 12 , 1/4 W Chip Resistors CRCW120612R0FKEA Vishay
Z1 600–900 MHz Band, 90, 3 dB Chip Hybrid Coupler X3C07P1-03S Anaren
PCB Rogers RO3006, 0.025,
r
=6.5 D76131 MTL
A2T09D400--23NR6
5
RF Device Data
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS
PARC (dB)
–6.5
–2.5
–3.5
–4.5
–5.5
–7.5
760
f, FREQUENCY (MHz)
Figure 3. Single--Carrier Output Peak--to--Average Ratio Compression
(PARC) Broadband Performance @ P
out
= 93 Watts Avg.
10
20
19
18
–38
60
55
50
45
–18
–22
–26
–30
D
, DRAIN
EFFICIENCY (%)
G
ps
, POWER GAIN (dB)
17
16
15
14
13
12
11
780 800 820 840 860 880 900 960
40
–34
ACPR (dBc)
Figure 4. Intermodulation Distortion Products
versus Two--Tone Spacing
TWO--TONE SPACING (MHz)
10
60
10
–20
30
–50
1 100
IMD, INTERMODULATION DISTORTION (dBc)
40
Figure 5. Output Peak--to--Average R atio
Compression (PARC) versus Output Power
P
out
, OUTPUT POWER (WATTS)
–1
–3
50
0
–2
–4
OUTPUT COMPRESSION AT 0.01%
PROBABILITY ON CCDF (dB)
10 90 130 210
10
70
60
50
40
30
20
D
DRAIN EFFICIENCY (%)
170
D
ACPR
PARC
ACPR (dBc)
–65
–5
–15
–25
–45
–35
–55
18.6
G
ps
, POWER GAIN (dB)
18.2
17.8
17.4
17
16.6
16.2
G
ps
–5
1
ACPR
D
PARC
G
ps
V
DD
=28Vdc,P
out
= 180 W (PEP), I
DQA
= 1200 mA
V
GSB
= 1.12 Vdc, T wo--Tone Measurements
(f1 + f2)/2 = Center Frequency of 806 MHz
IM3--L
IM5--U
IM7--L
IM7--U
–1 dB = 51.94 W
–2 dB = 76.31 W
–3 dB = 107.23 W
IM5--L
IM3--U
Input Signal PAR = 9.9 dB
@ 0.01% Probability on CCDF
V
DD
=28Vdc,I
DQA
= 1200 mA, V
GSB
=1.12Vdc
f = 806 MHz, Single--Carrier W--CDMA, 3.84 MHz
Channel Bandwidth, Input Signal PAR = 9.9 dB
@ 0.01% Probability on CCDF
920 940
V
DD
=28Vdc,P
out
=93W(Avg.),I
DQA
= 1200 mA
V
GSB
= 1.12 Vdc, Single--Carrier W--CDMA
3.84 MHz Channel Bandwidth
6
RF Device Data
Freescale Semiconductor, Inc.
A2T09D400--23NR6
TYPICAL CHARACTERISTICS
1
P
out
, OUTPUT POWER (WATTS) AVG.
Figure 6. Single--Carrier W--CDMA Power Gain, Drain
Efficiency and ACPR versus Output Power
–10
–20
10
22
0
60
50
40
30
20
D
, DRAIN EFFICIENCY (%)
G
ps
, POWER GAIN (dB)
20
18
10 200
10
–60
ACPR (dBc)
16
14
12
0
–30
–40
–50
Figure 7. B roadband Frequency Response
15
18
f, FREQUENCY (MHz)
V
DD
=28Vdc
P
in
=0dBm
I
DQA
= 1200 mA
V
GSB
=1.12Vdc
17
16.5
16
GAIN (dB)
17.5
15.5
600 650 700 750 800 850 900 950 1000
Gain
ACPR
D
G
ps
776 MHz
100
V
DD
=28Vdc,I
DQA
= 1200 mA, V
GSB
=1.12Vdc
Single--Carrier W--CDMA, 3.84 MHz Channel
Bandwidth
776 MHz
806 MHz
836 MHz
776 MHz
806 MHz
836 MHz
Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF
776 MHz
836 MHz
806 MHz

A2T09D400-23NR6

Mfr. #:
Manufacturer:
NXP / Freescale
Description:
RF MOSFET Transistors AIRFAST RF POWER LDMOS TRANSISTOR 716-960 MHz, 93 W AVG., 28 V
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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