Important notice
Dear Customer,
On 7 February 2017 the former NXP Standard Product business became a new company with the
tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS
semiconductors with its focus on the automotive, industrial, computing, consumer and wearable
application markets
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use
the references to Nexperia, as shown below.
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use http://www.nexperia.com
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salesaddresses@nexperia.com (email)
Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on
the version, as shown below:
- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights
reserved
Should be replaced with:
- © Nexperia B.V. (year). All rights reserved.
If you have any questions related to the data sheet, please contact our nearest sales office via e-mail
or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and
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Kind regards,
Team Nexperia
1. Product profile
1.1 General description
PNP low V
CEsat
Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB)
small Surface-Mounted Device (SMD) plastic package.
NPN complement: PBSS4140T.
1.2 Features
n Low collector-emitter saturation voltage V
CEsat
n High collector current capability I
C
and I
CM
n High collector current gain (h
FE
) at high I
C
n High efficiency due to less heat generation
1.3 Applications
n General-purpose switching and muting
n LCD backlighting
n Supply line switching circuits
n Battery-driven equipment (mobile phones, video cameras and handheld devices)
1.4 Quick reference data
[1] Pulse test: t
p
300 µs; δ≤0.02.
PBSS5140T
40 V, 1 A PNP low V
CEsat
BISS transistor
Rev. 04 — 29 July 2008 Product data sheet
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
CEO
collector-emitter voltage open base - - 40 V
I
C
collector current - - 1A
I
CM
peak collector current single pulse;
t
p
1ms
--2A
R
CEsat
collector-emitter
saturation resistance
I
C
= 500 mA;
I
B
= 50 mA
[1]
- 300 < 500 m
PBSS5140T_4 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 04 — 29 July 2008 2 of 13
NXP Semiconductors
PBSS5140T
40 V, 1 A PNP low V
CEsat
BISS transistor
2. Pinning information
3. Ordering information
4. Marking
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
5. Limiting values
Table 2. Pinning
Pin Description Simplified outline Graphic symbol
1 base
2 emitter
3 collector
12
3
006aab259
2
1
3
Table 3. Ordering information
Type number Package
Name Description Version
PBSS5140T - plastic surface-mounted package; 3 leads SOT23
Table 4. Marking codes
Type number Marking code
[1]
PBSS5140T *2H
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
CBO
collector-base voltage open emitter - 40 V
V
CEO
collector-emitter voltage open base - 40 V
V
EBO
emitter-base voltage open collector - 5V
I
C
collector current - 1A
I
CM
peak collector current single pulse;
t
p
1ms
- 2A
I
BM
peak base current single pulse;
t
p
1ms
- 1A

PBSS5140T,215

Mfr. #:
Manufacturer:
Nexperia
Description:
Bipolar Transistors - BJT PNP 40V 1A
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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