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PBSS5140T,215

P1-P3P4-P6P7-P9P10-P12P13-P14
PBSS5140T_4 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 04 — 29 July 2008 3 of 13
NXP Semiconductors
PBSS5140T
40 V, 1 A PNP low V
CEsat
BISS transistor
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
2
.
6. Thermal characteristics
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
2
.
P
tot
total power dissipation T
amb
≤ 25 °C
[1]
- 300 mW
[2]
- 450 mW
T
j
junction temperature - 150 °C
T
amb
ambient temperature −65 +150 °C
T
stg
storage temperature −65 +150 °C
(1) FR4 PCB, mounting pad for collector 1 cm
2
(2) FR4 PCB, standard footprint
Fig 1. Power derating curves
Table 5. Limiting values
…continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
T
amb
(°C)
−75 17512525 75−25
006aab308
0.5
0.25
0.75
1
P
tot
(W)
0
(1)
(2)
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-a)
thermal resistance from
junction to ambient
in free air
[1]
- - 417 K/W
[2]
- - 278 K/W
PBSS5140T_4 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 04 — 29 July 2008 4 of 13
NXP Semiconductors
PBSS5140T
40 V, 1 A PNP low V
CEsat
BISS transistor
FR4 PCB, standard footprint
Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
FR4 PCB, mounting pad for collector 1 cm
2
Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
006aab309
10
1
10
2
10
3
Z
th(j-a)
(K/W)
10
−1
10
−5
1010
−2
10
−4
10
2
10
−1
t
p
(s)
10
−3
10
3
1
duty cycle =
1
0.75
0.5
0.33
0.2
0.1
0.05
0.02
0.01
0
006aab310
10
1
10
2
10
3
Z
th(j-a)
(K/W)
10
−1
10
−5
1010
−2
10
−4
10
2
10
−1
t
p
(s)
10
−3
10
3
1
duty cycle =
0
0.01
0.02
0.05
0.1
0.2
0.33
0.5
0.75
1
PBSS5140T_4 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 04 — 29 July 2008 5 of 13
NXP Semiconductors
PBSS5140T
40 V, 1 A PNP low V
CEsat
BISS transistor
7. Characteristics
[1] Pulse test: t
p
≤ 300 µs; δ≤0.02.
Table 7. Characteristics
T
amb
=25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
I
CBO
collector-base cut-off
current
V
CB
= −40 V; I
E
=0A - - −100 nA
V
CB
= −40 V; I
E
=0A;
T
j
= 150 °C
--−50 µA
I
CEO
collector-emitter
cut-off current
V
CE
= −30 V; I
B
=0A - - −100 nA
I
EBO
emitter-base cut-off
current
V
EB
= −5 V; I
C
=0A - - −100 nA
h
FE
DC current gain V
CE
= −5 V; I
C
= −1 mA 300 - -
V
CE
= −5 V; I
C
= −100 mA 300 - 800
V
CE
= −5 V; I
C
= −500 mA
[1]
250 - -
V
CE
= −5 V; I
C
= −1A
[1]
160 - -
V
CEsat
collector-emitter
saturation voltage
I
C
= −100 mA; I
B
= −1mA - - −200 mV
I
C
= −500 mA; I
B
= −50 mA
[1]
--−250 mV
I
C
= −1 A; I
B
= −100 mA
[1]
--−500 mV
R
CEsat
collector-emitter
saturation resistance
I
C
= −500 mA; I
B
= −50 mA
[1]
- 300 < 500 mΩ
V
BEsat
base-emitter
saturation voltage
I
C
= −1 A; I
B
= −50 mA
[1]
--−1.1 V
V
BEon
base-emitter turn-on
voltage
V
CE
= −5 V; I
C
= −1A - - −1V
t
d
delay time V
CC
= −10 V; I
C
= −0.5 A;
I
Bon
= −25 mA;
I
Boff
=25mA
-10-ns
t
r
rise time - 31 - ns
t
on
turn-on time - 41 - ns
t
s
storage time - 195 - ns
t
f
fall time - 65 - ns
t
off
turn-off time - 260 - ns
f
T
transition frequency V
CE
= −10 V; I
C
= −50 mA;
f = 100 MHz
150 - - MHz
C
c
collector capacitance V
CB
= −10 V; I
E
=i
e
=0A;
f=1MHz
--12pF
P1-P3P4-P6P7-P9P10-P12P13-P14

PBSS5140T,215

Mfr. #:
Buy PBSS5140T,215
Manufacturer:
Nexperia
Description:
Bipolar Transistors - BJT PNP 40V 1A
Lifecycle:
New from this manufacturer.
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