Nexperia
BUK6D43-60E
60 V, N-channel Trench MOSFET
BUK6D43-60E All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet 13 December 2017 4 / 15
T
j
(°C)
-75 22512525
aaa-026120
40
80
120
P
der
(%)
0
Fig. 1. Normalized total power dissipation as a
function of junction temperature
T
j
(°C)
-75 22512525
aaa-026121
40
80
120
I
der
(%)
0
Fig. 2. Normalized continuous drain current as a
function of junction temperature
aaa-027717
V
DS
(V)
10
-1
10
2
101
10
2
I
D
(A)
10
-2
10
-1
1
10
DC; T
sp
= 25 °C
DC; T
amb
= 25 °C; 6 cm
2
t
p
=
10 µs
100 µs
1 ms
10 ms
100 ms
Limit R
DSon
= V
DS
/I
D
Fig. 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-
source voltage
Nexperia
BUK6D43-60E
60 V, N-channel Trench MOSFET
BUK6D43-60E All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet 13 December 2017 5 / 15
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-a)
thermal resistance
from junction to
ambient
in free air [1] - 57 66 K/W
R
th(j-sp)
thermal resistance
from junction to solder
point
- 6 10 K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm
2
.
aaa-027718
t
p
(s)
10
-5
10
-4
10
-3
10
-2
10
Z
th(j-sp)
(K/W)
10
-2
10-1
1
duty cycle = 1
0.01
0
0.02
0.05
0.1
0.2
0.25
0.33
0.5
0.75
Fig. 4. Transient thermal impedance from junction to solder point as a function of pulse duration; typical values
aaa-026870
t
p
(s)
10
-3
10
3
10
2
10110
-1
10
-2
10
2
10
Z
th(j-a)
(K/W)
1
duty cycle = 1
0.02
0.01
0
0.05
0.1
0.2
0.25
0.33
0.5
0.75
FR4 PCB, mounting pad for drain 6 cm
2
Fig. 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
Nexperia
BUK6D43-60E
60 V, N-channel Trench MOSFET
BUK6D43-60E All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet 13 December 2017 6 / 15
10. Characteristics
Table 7. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
V
(BR)DSS
drain-source
breakdown voltage
I
D
= 250 µA; V
GS
= 0 V; T
j
= 25 °C 60 - - V
V
GSth
gate-source threshold
voltage
I
D
= 250 µA; V
DS
=V
GS
; T
j
= 25 °C 1.3 1.7 2.7 V
V
DS
= 60 V; V
GS
= 0 V; T
j
= 25 °C - - 1 µAI
DSS
drain leakage current
V
DS
= 60 V; V
GS
= 0 V; T
j
= 175 °C - - 500 µA
V
GS
= 20 V; V
DS
= 0 V; T
j
= 25 °C - - 100 nAI
GSS
gate leakage current
V
GS
= -20 V; V
DS
= 0 V; T
j
= 25 °C - - -100 nA
V
GS
= 10 V; I
D
= 5 A; T
j
= 25 °C - 32 43
V
GS
= 10 V; I
D
= 5 A; T
j
= 175 °C - 69 93
R
DSon
drain-source on-state
resistance
V
GS
= 4.5 V; I
D
= 4.5 A; T
j
= 25 °C - 38 53
g
fs
forward
transconductance
V
DS
= 5 V; I
D
= 5 A; T
j
= 25 °C - 5 - S
R
G
gate resistance f = 1 MHz - 3.5 - Ω
Dynamic characteristics
Q
G(tot)
total gate charge - 10 18 nC
Q
GS
gate-source charge - 1.7 - nC
Q
GD
gate-drain charge
V
DS
= 30 V; I
D
= 6 A; V
GS
= 10 V;
T
j
= 25 °C
- 2.1 - nC
C
iss
input capacitance - 590 - pF
C
oss
output capacitance - 60 - pF
C
rss
reverse transfer
capacitance
V
DS
= 30 V; f = 1 MHz; V
GS
= 0 V;
T
j
= 25 °C
- 34 - pF
t
d(on)
turn-on delay time - 3 - ns
t
r
rise time - 5 - ns
t
d(off)
turn-off delay time - 11 - ns
t
f
fall time
V
DS
= 30 V; I
D
= 6 A; V
GS
= 10 V;
R
G(ext)
= 6 Ω; T
j
= 25 °C
- 4 - ns
Source-drain diode
V
SD
source-drain voltage I
S
= 2.3 A; V
GS
= 0 V; T
j
= 25 °C - 0.8 1.2 V
t
rr
reverse recovery time - 15.5 - ns
Q
r
recovered charge
I
S
= 2.3 A; dI
S
/dt = -100 A/µs;
V
GS
= 0 V; V
DS
= 30 V; T
j
= 25 °C
- 8.3 - nC

BUK6D43-60EX

Mfr. #:
Manufacturer:
Nexperia
Description:
MOSFET N-CH 60V 5A 6DFN2020MD
Lifecycle:
New from this manufacturer.
Delivery:
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