Nexperia
BUK6D43-60E
60 V, N-channel Trench MOSFET
BUK6D43-60E All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet 13 December 2017 8 / 15
V
GS
(V)
0 431 2
aaa-026862
20
I
D
(A)
0
16
12
8
4
T
j
= 175 °C T
j
= 25 °C
V
DS
> I
D
x R
DSon
Fig. 10. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
T
j
(°C)
-60 1801200 60
aaa-026863
2.4
a
0
2.0
1.6
1.2
0.8
0.4
Fig. 11. Normalized drain-source on-state resistance
as a function of junction temperature; typical
values
T
j
(°C)
-60 1801200 60
aaa-026864
4
V
GS(th)
(V)
0
3
2
1
max
typ
min
I
D
= 250 μA; V
DS
= V
GS
Fig. 12. Gate-source threshold voltage as a function of
junction temperature
V
DS
(V)
10
-1
10
2
101
aaa-026865
10
3
C
(pF)
10
10
2
C
iss
C
oss
C
rss
f = 1 MHz; V
GS
= 0 V
Fig. 13. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
