ZNBG2000X10TA

DEVICE DESCRIPTION
The ZNBG series of devices are designed to meet the
bias requirements of GaAs and HEMT FETs
commonly used in satellite receiver LNBs, PMR,
cellular telephones etc. with a minimum of external
components.
With the addition of two capacitors and a resistor the
devices provide drain voltage and current control for
2 external grounded source FETs, generating the
regulated negative rail required for FET gate biasing
whilst operating from a single supply. This negative
bias, at -3 volts, can also be used to supply other
external circuits.
The ZNBG2000/1 contains two bias stages. A single
resistor allows FET drain current to be set to the
desired level. The series also offers the choice of
drain voltage to be set for the FETs, the ZNBG2000
gives 2.2 volts drain whilst the ZNBG2001 gives 2
volts.
These devices are unconditionally stable over the full
working temperature with the FETs in place, subject
to the inclusion of the recommended gate and drain
capacitors. These ensure RF stability and minimal
injected noise.
FEATURES
Provides bias for GaAs and HEMT FETs
Drives up to two FETs
Dynamic FET protection
Drain current set by external resistor
Regulated negative rail generator requires only 2
external capacitors
Choice in drain voltage
Wide supply voltage range
MSOP surface mount package
It is possible to use less than the devices full
complement of FET bias controls, unused drain and
gate connections can be left open circuit without
affecting operation of the remaining bias circuits.
In order to protect the external FETs the circuits have
been designed to ensure that, under any conditions
including power up/down transients, the gate drive
from the bias circuits cannot exceed the range -3.5V
to 0.7V. Furthermore if the negative rail experiences a
fault condition, such as overload or short circuit, the
drain supply to the FETs will shut down avoiding
excessive current flow.
The ZNBG2000/1 are available in MSOP10 packages
for the minimum in devices size. Device operating
temperature is -40 to 80°C to suit a wide range of
environmental conditions.
APPLICATIONS
Satellite receiver LNBs
Private mobile radio (PMR)
Single in single out C Band LNB
Cellular telephones
ISSUE 1 - AUGUST 2001
FET BIAS CONTROLLER
ZNBG2000
ZNBG2001
1
ISSUE 1 - AUGUST 2001
ZNBG2000
ZNBG2001
2
ABSOLUTE MAXIMUM RATINGS
Supply Voltage -0.6V to 15V
Supply Current 100mA
Drain Current (per FET) 0 to 15mA
(set by R
CAL1
and R
CAL2
)
Output Current 100mA
Operating Temperature -40 to 80°C
Storage Temperature -40 to 85°C
Power Dissipation (T
amb 25 C)
MSOP10 500mW
SYMBOL PARAMETER CONDITIONS
LIMITS
UNITS
Min Typ Max
V
CC
Supply Voltage 5 12 V
I
CC
Supply Current I
D1
and I
D2=0
I
D1
and I
D2
=10mA
5
24
10
30
mA
mA
V
SUB
Substrate Voltage
(Internally generated)
I
SUB
=0
I
SUB
= -200µA
-3.5 -2.8 -2
-2
V
V
E
ND
E
NG
Output Noise
Drain Voltage
Gate Voltage
C
G
=4.7nF, C
D
=10nF
C
G
=4.7nF, C
D
=10nF
0.02
0.005
Vpkpk
Vpkpk
f
O
Oscillator Freq. 150 330 800 kHz
DRAIN CHARACTERISTICS
I
DO
Output Current Range Set by R
CAL1
015mA
I
D
Current 8 10 12 mA
Current Change
I
DV
with V
CC
V
CC
=5 to 12V 0.5 %/V
I
DT
with T
j
T
j
=-40 to +80°C 0.05 %/°C
V
D
Voltage ZNBG2000
ZNBG2001
I
D1
and I
D2
=10mA 2
1.8
2.2
2
2.4
2.2
V
V
Voltage Change
V
DV
with V
CC
V
CC
= 5 to 12V 0.5 %/V
V
DT
with T
j
T
j
= -40 to +80°C 50 ppm
GATE CHARACTERISTICS
I
GO
Output Current Range -40 2000
µA
Output Voltage
V
OL
Output Low I
D1
and I
D2
=12mA
IG1
and I
G2
=0 -3.5 -2 V
I
D1
and I
D2
=12mA
I
G1
and I
G2
= -10µA
-3.5 -2 V
V
OH
Output High I
D1
and I
D2
= 8mA
I
G1
and I
G2
= 0 0.4 1 V
Notes:
1. The negative bias voltages specified are generated on-chip using an internal oscillator. Two external capacitors, C
NB
and C
SUB
, of 47nF are required for this
purpose.
2. The characteristics are measured using an external reference resistors R
CAL1
of value 16k wired from pin R
CAL1
to ground.
3. Noise voltage is not measured in production.
4. Noise voltage measurement is made with FETs and gate and drain capacitors in place on all outputs. C
G
, 4.7nF, are connected between gate outputs and
ELECTRICAL CHARACTERISTICS TEST CONDITIONS (Unless otherwise
ISSUE 1 - AUGUST 2001
ZNBG2000
ZNBG2001
3
5
JFET Drain Current v Rcal
0102030 50
0
2
4
6
8
10
Rcal (k)
Drain Current (mA)
40
12
14
16
Vcc = 5V
JFET Drain Voltage v Drain Current
2468 16
2.0
2.1
2.2
Drain Current (mA)
Drain Voltage (V)
10
2.3
2.4
12 14
Vcc = 5V
6V
8V
10V
Vsub v External Load
0 0.2 0.4 0.6 1.0
-3.0
-2.5
-2.0
-1.5
-1.0
External Vsub Load (mA)
Vsub (V)
0.8
-0.5
0.0
Vcc = 5V
6V
8V
10V
Drain Current (mA)
JFET Drain Voltage v Drain Current
Drain Voltage (V)
4
1.8
2
2.0
1.9
68
Vcc = 5V
10V
8V
6V
2.2
2.1
10 12 14 16
Note:- Operation with loads > 200
µ
A
is not guaranteed.
ZNBG2001
ZNBG2000
TYPICAL CHARACTERISTICS

ZNBG2000X10TA

Mfr. #:
Manufacturer:
Description:
IC CTRLR BIAS FET 2STAGE 10-MSOP
Lifecycle:
New from this manufacturer.
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