Important notice
Dear Customer,
On 7 February 2017 the former NXP Standard Product business became a new company with the
tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS
semiconductors with its focus on the automotive, industrial, computing, consumer and wearable
application markets
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use
the references to Nexperia, as shown below.
Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/,
use http://www.nexperia.com
Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use
salesaddresses@nexperia.com (email)
Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on
the version, as shown below:
- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights
reserved
Should be replaced with:
- © Nexperia B.V. (year). All rights reserved.
If you have any questions related to the data sheet, please contact our nearest sales office via e-mail
or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and
understanding,
Kind regards,
Team Nexperia
1. Product profile
1.1 General description
Planar Schottky barrier diode with an integrated guard ring for stress protection,
encapsulated in a small hermetically sealed glass SOD80C Surface-Mounted
Device SMD package with tin-plated metal discs at each end. It is suitable for
“automatic placement” and as such it can withstand immersion soldering.
1.2 Features and benefits
Low forward voltage
High breakdown voltage
Guard-ring protected
Hermetically sealed glass SMD package
1.3 Applications
Ultra high-speed switching
Voltage clamping
Protection circuits
Blocking diodes
1.4 Quick reference data
BAS85
Schottky barrier diode
Rev. 6 — 10 September 2010 Product data sheet
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
I
F
forward current - - 200 mA
V
R
reverse voltage - - 30 V
V
F
forward voltage I
F
= 100 mA - - 800 mV
BAS85 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 6 — 10 September 2010 2 of 10
NXP Semiconductors
BAS85
Schottky barrier diode
2. Pinning information
[1] The marking band indicates the cathode.
3. Ordering information
4. Marking
5. Limiting values
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
Table 2. Pinning
Pin Description Simplified outline Graphic symbol
1 cathode
[1]
2 anode
ka
sym00
1
12
Table 3. Ordering information
Type number Package
Name Description Version
BAS85 - hermetically sealed glass surface-mounted package;
2 connectors
SOD80C
Table 4. Marking codes
Type number Marking code
BAS85 marking band
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
R
reverse voltage - 30 V
I
F
forward current - 200 mA
I
F(AV)
average forward current
[1]
-200mA
I
FRM
repetitive peak forward
current
t
p
1s; δ≤0.5 - 300 mA
I
FSM
non-repetitive peak
forward current
t
p
=10ms - 5 A
T
j
junction temperature - 125 °C
T
amb
ambient temperature 65 +125 °C
T
stg
storage temperature 65 +150 °C

BAS85,115

Mfr. #:
Manufacturer:
Nexperia
Description:
Schottky Diodes & Rectifiers SCHOTTKY 30V 200MA
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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