OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

BAS85,115

P1-P3P4-P6P7-P9P10-P11
BAS85 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 6 — 10 September 2010 3 of 10
NXP Semiconductors
BAS85
Schottky barrier diode
6. Thermal characteristics
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
7. Characteristics
[1] Pulse test: t
p
≤ 300 μs; δ≤0.02.
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-a)
thermal resistance from
junction to ambient
in free air
[1]
- - 320 K/W
Table 7. Characteristics
T
amb
=25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
V
F
forward voltage I
F
= 0.1 mA - - 240 mV
I
F
= 1 mA - - 320 mV
I
F
= 10 mA - - 400 mV
I
F
= 30 mA - - 500 mV
I
F
= 100 mA - - 800 mV
I
R
reverse current V
R
=25V
[1]
--2.3μA
C
d
diode capacitance V
R
=1V; f=1MHz --10pF
BAS85 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 6 — 10 September 2010 4 of 10
NXP Semiconductors
BAS85
Schottky barrier diode
FR4 PCB, standard footprint (1) T
amb
= 125 °C
(2) T
amb
=85°C
(3) T
amb
=25°C
Fig 1. Average forward current as a function of
ambient temperature; derating curve
Fig 2. Forward current as a function of forward
voltage; typical values
(1) T
amb
=85°C
(2) T
amb
=25°C
(3) T
amb
= −40 °C
f=1MHz; T
amb
=25°C
Fig 3. Reverse current as a function of reverse
voltage; typical values
Fig 4. Diode capacitance as a function of reverse
voltage; typical values
0
50
100
150
200
250
0 50 100 150
I
F(AV)
(mA)
T
amb
(°C)
mra540
1.20.80.40
V
F
(V)
I
F
(mA)
10
3
10
2
10
1
10
−1
mld358
(1) (2) (3)
(1)
(2) (3)
mgc682
10
5
I
R
(nA)
10
4
10
3
10
2
10
−1
10
1
3020
V
R
(V)
100
(1)
(2)
(3)
01020
V
R
(V)
30
12
C
d
(pF)
0
4
8
mgc681
BAS85 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 6 — 10 September 2010 5 of 10
NXP Semiconductors
BAS85
Schottky barrier diode
8. Package outline
9. Packing information
[1] For further information and the availability of packing methods, see Section 13.
Fig 5. Package outline SOD80C
06-03-16Dimensions in mm
1.60
1.45
0.3
3.7
3.3
0.3
Table 8. Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.
[1]
Type number Package Description Packing quantity
2500 10000
BAS85 SOD80C 4 mm pitch, 8 mm tape and reel -115 -135
P1-P3P4-P6P7-P9P10-P11

BAS85,115

Mfr. #:
Buy BAS85,115
Manufacturer:
Nexperia
Description:
Schottky Diodes & Rectifiers SCHOTTKY 30V 200MA
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet